A. Asenov - Publications, H-index & Citations

A. Asenov

university of glasgow

29H指数

220论文数

3.3K被引数

收录论文 7

发表时间

A methodology for process design kit re-centering using TCAD and experimental data for cryogenic temperatures 基于TCAD和低温实验数据的过程设计套件再校准方法学

SOLID-STATE ELECTRONICS

IF1.4

2025-12-01

OAAI

Dutta, Tapas; Adamu-Lema, Fikru; Bensouiah, Djamel; Asenov, Asen

NFGen: Normalizing Flow-Based Joint Generative Model for Variability-Aware Design Technology Co-Optimization NFGen: 基于归一化流的变异性感知设计技术协同优化联合生成模型

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

IF2.9

2025-08-29

PREAI

Tao Zou; Zhenxing Dou; Zhiwei Chen; Yijiao Wang; Wen Shi; Zhiyu Wang; Peng Wang; Runsheng Wang; Weisheng Zhao; Asen Asenov

Stochastic analysis of surface roughness models in quantum wires

COMPUTER PHYSICS COMMUNICATIONS

IF3.4

2018-07-01

OAAI

Nedjalkov, Mihail; Ellinghaus, Paul; Weinbub, Josef; Sadi, Toufik; Asenov, Asen; Dimov, Ivan; Selberherr, Siegfried

Beyond SiO2 technology:: Simulation of the impact of high-κ dielectrics on mobility

JOURNAL OF NON-CRYSTALLINE SOLIDS

IF3.5

2007-04-01

PREAI

Ferrari, Giulio; Watling, J. R.; Roy, S.; Barker, J. R.; Asenov, A.

Monte Carlo study of mobility in Si devices with HfO2-based oxides

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2006-12-01

PREAI

Ferrari, Giulio; Watling, J. R.; Roy, S.; Barker, J. R.; Zeitzoff, P.; Bersuker, G.; Asenov, A.

Effective mobilities in pseudomorphic Si/SiGe/Si p-channel metal-oxide-semiconductor field-effect transistors with thin silicon capping layers

APPLIED PHYSICS LETTERS

IF3.6

2001-03-05

OAAI

Palmer, MJ; Braithwaite, G; Grasby, TJ; Phillips, PJ; Prest, MJ; Parker, EHC; Whall, TE; Parry, CP; Waite, AM; Evans, AGR; Roy, S; Watling, JR; Kaya, S; Asenov, A

Oxide thickness variation induced threshold voltage fluctuations in decanano MOSFETs: a 3D density gradient simulation study

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2000-11-01

PREAI

Asenov, A; Kaya, S; Davies, JH; Saini, S

研究方向