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I
I. Dói
universidade estadual de campinas
12
H指数
108
论文数
656
被引数
0
相关解读
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8
发表时间
发表时间
IF
被引数
Surface passivation of InGaP/GaAs HBT using silicon-nitride film deposited by ECR-CVD plasma
使用通过ecr-cvd等离子体沉积的氮化硅膜对InGaP/GaAs HBT进行表面钝化
APPLIED SURFACE SCIENCE
IF
6.9
2008-07-01
2
PRE
AI
Manera, L. T.; Zoccal, L. B.; Diniz, J. A.; Tatsch, P. J.; Doi, I.
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Structural characterization of SiGe nanoclusters formed by rapid thermal annealing
APPLIED SURFACE SCIENCE
IF
6.9
2008-07-01
3
PRE
AI
dos Anjos, Alexandre Miranda P.; Doi, Ioshiaki; Diniz, Jose Alexandre
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Structural and surface properties of Si1-xGex thin films obtained by reduced pressure CVD
APPLIED SURFACE SCIENCE
IF
6.9
2007-10-01
2
PRE
AI
Teixeira, R. C.; Doi, I.; Diniz, J. A.; Swart, J. W.; Zakia, M. B. P.
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Fabrication and characterization of Ge nanocrystalline growth by ion implantation in SiO2 matrix
JOURNAL OF MATERIALS SCIENCE
IF
3.9
2007-09-01
15
PRE
AI
Mestanza, S. N. M.; Doi, I.; Swart, J. W.; Frateschi, N. C.
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Development of process for far infrared sensor fabrication
SENSORS AND ACTUATORS A-PHYSICAL
IF
4.9
2006-11-01
7
PRE
AI
Neli, Roberto R.; Doi, Ioshiaki; Diniz, Jose A.; Swart, Jacobus W.
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Silicon nitride deposited by ECR-CVD at room temperature for LOCOS isolation technology
APPLIED SURFACE SCIENCE
IF
6.9
2003-05-01
25
PRE
AI
Pereira, MA; Diniz, JA; Doi, I; Swart, JW
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Si-LiG process for inductive meso systems
APPLIED SURFACE SCIENCE
IF
6.9
2003-05-01
3
PRE
AI
Barbaroto, PR; Doi, I; Ferreira, LOS
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Insulators obtained by electron cyclotron resonance plasmas on Si or GaAs
MATERIALS CHARACTERIZATION
IF
5.5
2003-03-01
8
PRE
AI
Diniz, JA; Doi, I; Swart, JW
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研究方向
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合作学者
合作期刊
J
Jacobus W. Swart
H 指数: 18 · 论文数: 255
N
Newton C. Frateschi
H 指数: 17 · 论文数: 166
J
J. A. Diniz
H 指数: 16 · 论文数: 198
L
Leandro Tiago Manera
H 指数: 9 · 论文数: 101
R
Ricardo Cotrin Teixeira
H 指数: 8 · 论文数: 60
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