F.D. Auret - Publications, H-index & Citations

F.D. Auret

university of pretoria

33H指数

374论文数

4.7K被引数

收录论文 38

发表时间

Laplace DLTS study of defects introduced in GaAs during sputter deposition of Au Schottky contacts

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2022-12-01

PREAI

Taghizadeh, F.; van Rensburg, P. J. Janse; Meyer, W. E.; Auret, F. D.

APPLIED PHYSICS LETTERS

IF3.6

2020-02-18

OAAI

Zimmermann, Christian; Frodason, Ymir Kalmann; Barnard, Abraham Willem; Varley, Joel Basile; Irmscher, Klaus; Galazka, Zbigniew; Karjalainen, Antti; Meyer, Walter Ernst; Auret, Francois Danie; Vines, Lasse

The effect of alpha particle irradiation on electrical properties and defects of ZnO thin films prepared by sol-gel spin coating Α粒子辐照对溶胶-凝胶旋涂法制备ZnO薄膜电学性能和缺陷的影响

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2019-10-01

OAAI

Ahmed, M. E., I; Taghizadeh, F.; Auret, F. D.; Meyer, W. E.; Nel, J. M.

Barrier height inhomogeneities on Pd/n-4H-SiC Schottky diodes in a wide temperature range

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS

IF4.6

2019-08-01

OAAI

Gora, V. E.; Auret, F. D.; Danga, H. T.; Tunhuma, S. M.; Nyamhere, C.; Igumbor, E.; Chawanda, A.

Electronic properties and transformation kinetics of two prominent metastable defects introduced in GaAs during sputter deposition of Au Schottky contacts

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2019-08-01

OAAI

Taghizadeh, F.; van Rensburg, P. J. Janse; Ostvar, K.; Meyer, W. E.; Auret, F. D.

Electrical characterisation of deep level defects created by bombarding the n-type 4H-SiC with 1.8 MeV protons

SURFACE & COATINGS TECHNOLOGY

IF6.1

2018-12-01

PREAI

Omotoso, E.; Paradzah, A. T.; van Rensburg, P. J. Janse; Legodi, M. J.; Auret, F. D.; Igumbor, E.; Danga, H. T.; Diale, M.; Meyer, W. E.

Electrical characterization of defects introduced during sputter deposition of tungsten on n type 4H-SiC

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2018-07-01

OAAI

Tunhuma, Shandirai M.; Auret, F. D.; Legodi, M. J.; Nel, J.; Diale, M.

DLTS characterization of defects in GaN induced by electron beam exposure

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2017-06-01

OAAI

Ngoepe, P. N. M.; Meyer, W. E.; Auret, F. D.; Omotoso, E.; Diale, M.

Electrical characterization of defects introduced during electron beam deposition of W Schottky contacts on n-type 4H-SiC n型4H-SiC上W肖特基接触的电子束沉积过程中引入的缺陷的电学表征

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2016-08-01

OAAI

Omotoso, E.; Meyer, W. E.; Coelho, S. M. M.; Diale, M.; Ngoepe, P. N. M.; Auret, F. D.

The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2015-11-01

OAAI

Omotoso, E.; Meyer, W. E.; Auret, F. D.; Paradzah, A. T.; Diale, M.; Coelho, S. M. M.; van Rensburg, P. J. Janse

Temperature-dependent current-voltage characteristics of Pd/ZnO Schottky barrier diodes and the determination of the Richardson constant

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2015-06-01

OAAI

Mayimele, Meehleketo A.; Diale, Mmantsae; Mtangi, Wilbert; Auret, Francois D.

Solid state reaction of ruthenium with silicon carbide, and the implications for its use as a Schottky contact for high temperature operating Schottky diodes

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS

IF4.6

2014-02-01

PREAI

Munthali, Kinnock V.; Theron, Chris; Auret, F. Danie; Coelho, Sergio M. M.; Njoroge, Eric; Prinsloo, Linda

Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (100)

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2012-02-01

OAAI

Chawanda, A.; Coelho, S. M. M.; Auret, F. D.; Mtangi, W.; Nyamhere, C.; Nel, J. M.; Diale, M.

Thermal annealing behaviour of Pd Schottky contacts on melt-grown single crystal ZnO studied by IV and CV measurements

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS

IF4.6

2012-02-01

OAAI

Mtangi, W.; Auret, F. D.; Chawanda, A.; van Rensburg, P. J. Janse; Coelho, S. M. M.; Nel, J. M.; Diale, M.; van Schalkwyk, L.; Nyamhere, C.

Determination of the laterally homogeneous barrier height of palladium Schottky barrier diodes on n-Ge (111)

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2010-12-01

OAAI

Chawanda, A.; Roro, K. T.; Auret, F. D.; Mtangi, W.; Nyamhere, C.; Nel, J.; Leach, L.

Deep level transient spectroscopy of defects in high-energy light-particle irradiated Si

CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES

IF8.9

2010-08-10

PREAI

Auret, FD; Deenapanray, PNK

Analysis of current-voltage measurements on Au/Ni/n-GaN Schottky contacts in a wide temperature range 宽温度范围内Au/Ni/n-gan肖特基接触的电流-电压测量分析

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS

IF4.6

2010-07-01

OAAI

Mtangi, W.; van Rensburg, P. J. Janse; Diale, M.; Auret, F. D.; Nyamhere, C.; Nel, J. M.; Chawanda, A.

Thermal annealing behaviour of platinum, nickel and titanium Schottky barrier diodes on n-Ge (100)N-ge (100) 上铂，镍和钛肖特基势垒二极管的热退火行为

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2010-03-01

PREAI

Chawanda, A.; Nyamhere, C.; Auret, F. D.; Mtangi, W.; Diale, M.; Nel, J. M.

A comparative study of electronic properties of the defects introduced in p-Si: (i) During electron beam deposition of Ti/Mo, (ii) by proton irradiation, and (iii) by electron irradiation

SURFACE & COATINGS TECHNOLOGY

IF6.1

2009-06-01

PREAI

Das, A. G. M.; Nyamhere, C.; Auret, F. D.; Hayes, M.

Electrical characterization of defects introduced during metallization processes in n-type germanium

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2008-10-01

OAAI

Auret, F. D.; Coelho, S. M. M.; van Rensburg, P. J. Janse; Nyamhere, C.; Meyer, W. E.

研究方向