Improved angular color uniformity and hydrothermal reliability of phosphor-converted white light-emitting diodes by using phosphor sedimentationOPTICS EXPRESSIF3.32018-10-1911OA
Improving performance of high-power indium gallium nitride/gallium nitride-based vertical light-emitting diodes by employing simple n-type electrode patternMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSINGIF4.62015-03-013PREAI
Optimizing n-type contact design and chip size for high-performance indium gallium nitride/gallium nitride-based thin-film vertical light-emitting diodeMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSINGIF4.62015-03-0119PREAI
Formation of low-resistance Ohmic contacts to N-face n-GaN for high-power GaN-based vertical light-emitting diodesAPPLIED PHYSICS LETTERSIF3.62010-08-3123PREAI
Low-resistance and transparent Ni-Co solid solution/Au ohmic contacts to p-type GaN for green GaN-based light-emitting diodesSUPERLATTICES AND MICROSTRUCTURESIF3.32008-12-013PREAI
Formation of low-resistance and transparent indium tin oxide ohmic contact for high-brightness GaN-based light-emitting diodes using a Sn-Ag interlayerMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSINGIF4.62007-08-0114PREAI
Design of high-efficiency GaN-based light emitting diodes with vertical injection geometryAPPLIED PHYSICS LETTERSIF3.62007-07-1392PREAI
Enhancement of the light output of GaN-based ultraviolet light-emitting diodes by a one-dimensional nanopatterning processAPPLIED PHYSICS LETTERSIF3.62006-03-0863PREAI
Improvement of the light output of InGaN-based light-emitting diodes using Cu-doped indium oxide/indium tin oxide p-type electrodesAPPLIED PHYSICS LETTERSIF3.62005-05-1860PREAI
Low-resistance Al-based reflectors for high-power GaN-based flip-chip light-emitting diodesAPPLIED PHYSICS LETTERSIF3.62005-03-2129PREAI
High transparency of Ag/Zn-Ni solid-solution ohmic contacts for GaN-based ultraviolet light-emitting diodesAPPLIED PHYSICS LETTERSIF3.62005-03-018OAAI
Cu-doped indium oxide/Ag ohmic contacts for high-power flip-chip light-emitting diodesAPPLIED PHYSICS LETTERSIF3.62005-02-0160PREAI
Ohmic and degradation mechanisms of Ag contacts on p-type GaN -: art. no. 062104APPLIED PHYSICS LETTERSIF3.62005-02-01129PREAI
Low resistance and high reflectance Pt/Rh contacts to p-type GaN for GaN-based flip chip light-emitting diodesJOURNAL OF THE ELECTROCHEMICAL SOCIETYIF3.32005-01-0141PREAI
Highly transparent Ag/SnO2 ohmic contact to p-type GaN for ultraviolet light-emitting diodesAPPLIED PHYSICS LETTERSIF3.62004-12-2761PREAI
Low-resistance and transparent ohmic contacts to p-type GaN using Zn-Ni solid solution/Au schemeAPPLIED PHYSICS LETTERSIF3.62004-06-0718PREAI
Low resistance and transparent Ni-La solid solution/Au ohmic contacts to p-type GaNAPPLIED PHYSICS LETTERSIF3.62004-03-0112PREAI
Low-resistance and highly-reflective Zn-Ni solid solution/Ag ohmic contacts for flip-chip light-emitting diodesAPPLIED PHYSICS LETTERSIF3.62003-12-1575PREAI
Formation of low resistance and transparent ohmic contacts to p-type GaN using Ni-Mg solid solutionAPPLIED PHYSICS LETTERSIF3.62003-10-2765PREAI
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