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P. J. Timans

Georgia Institute of Technology

13H指数
71论文数
677被引数
收录论文 3
发表时间
Rapid thermal process driven intra-die device variations
err2022-12-01
err1
errOAAI
errTsai, C. H.; Aboy, M.; Pelaz, L.; Hsu, Y. H.; Woon, W. Y.; Timans, P. J.; Lee, C. K.
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Device scaling effect on the spectral-directional absorptance of wafer's front side
err2008-09-01
err9
PREAI
errFu, Kang; Chen, Yu-Bin; Hsu, Pei-Feng; Zhang, Zhuomin M.; Timans, Paul J.
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Infrared absorption in silicon at elevated temperatures
err1996-10-07
err43
PREAI
errRogne, H; Timans, PJ; Ahmed, H
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