Lourdes Pelaz - Publications, H-index & Citations

Lourdes Pelaz

Universidad de Valladolid

24H指数

215论文数

2.6K被引数

收录论文 45

发表时间

Atomistic study of dislocation formation during Ge epitaxy on Si Ge外延在Si上生长过程中位错形成的原子层次研究

Applied Surface Science

IF6.9

2025-09-12

OAAI

Luis Martín-Encinar; Luis A. Marqués; Iván Santos; Lourdes Pelaz

Obituary- Dr. Fuccio Cristiano

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2024-06-01

PREAI

Alberti, Alessandra; Colombeau, Benjamin; La Magna, Antonino; Hemeryck, Anne; Pelaz, Lourdes; Pichler, Peter

Rapid thermal process driven intra-die device variations

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2022-12-01

OAAI

Tsai, C. H.; Aboy, M.; Pelaz, L.; Hsu, Y. H.; Woon, W. Y.; Timans, P. J.; Lee, C. K.

Microscopic origin of the acceptor removal in neutron-irradiated Si detectors-An atomistic simulation study

ACTA MATERIALIA

IF9.3

2022-12-01

OAAI

Lopez, P.; Aboy, M.; Santos, I; Marques, L. A.; Ullan, M.; Pelaz, L.

Efficient and stable activation by microwave annealing of nanosheet silicon doped with phosphorus above its solubility limit 通过微波退火对磷掺杂的纳米片硅的溶解度极限以上进行高效稳定的活化

APPLIED PHYSICS LETTERS

IF3.6

2022-08-03

OAAI

Tsai, Chun-Hsiung; Savant, Chandrashekhar P.; Asadi, Mohammad Javad; Lin, Yu-Ming; Santos, Ivan; Hsu, Yu-Hsiang; Kowalski, Jeffrey; Pelaz, Lourdes; Woon, Wei-Yen; Lee, Chih-Kung; Hwang, James C. M.

Achieving junction stability in heavily doped epitaxial Si:P

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2021-06-01

OAAI

Tsai, C. H.; Hsu, Y. H.; Santos, I.; Pelaz, L.; Kowalski, J. E.; Liou, J. W.; Woon, W. Y.; Lee, C. K.

{001) loops in silicon unraveled

ACTA MATERIALIA

IF9.3

2019-03-01

OAAI

Marques, Luis A.; Aboy, Maria; Ruiz, Manuel; Santos, Ivan; Lopez, Pedro; Pelaz, Lourdes

Generation of amorphous Si structurally compatible with experimental samples through the quenching process: A systematic molecular dynamics simulation study

JOURNAL OF NON-CRYSTALLINE SOLIDS

IF3.5

2019-01-01

OAAI

Santos, Ivan; Aboy, Maria; Marques, Luis A.; Lopez, Pedro; Pelaz, Lourdes

Improved physical models for advanced silicon device processing

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2017-05-01

OAAI

Pelaz, Lourdes; Marques, Luis A.; Aboy, Maria; Lopez, Pedro; Santos, Ivan

Molecular dynamics simulation of the early stages of self-interstitial clustering in silicon

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2016-02-01

OAAI

Marques, Luis A.; Aboy, Maria; Ruiz, Manuel; Santos, Ivan; Lopez, Pedro; Pelaz, Lourdes

Insights on the atomistic origin of X and W photoluminescence lines in c-Si from ab initio simulations 从头计算对c-si中X和W光致发光线的原子起源的见解

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2016-01-14

OAAI

Santos, Ivan; Aboy, Maria; Lopez, Pedro; Marques, Luis A.; Pelaz, Lourdes

The curious case of thin-body Ge crystallization

APPLIED PHYSICS LETTERS

IF3.6

2011-09-29

OAAI

Duffy, R.; Shayesteh, M.; McCarthy, B.; Blake, A.; White, M.; Scully, J.; Yu, R.; Kelleher, A. -M.; Schmidt, M.; Petkov, N.; Pelaz, L.; Marques, L. A.

Elucidating the atomistic mechanisms driving self-diffusion of amorphous Si during annealing

PHYSICAL REVIEW B

IF3.7

2011-04-14

OAAI

Santos, Ivan; Marques, Luis A.; Pelaz, Lourdes; Colombo, Luciano

Self-trapping in B-doped amorphous Si: Intrinsic origin of low acceptor efficiency

PHYSICAL REVIEW B

IF3.7

2010-01-19

OAAI

Santos, I.; Castrillo, P.; Windl, W.; Drabold, D. A.; Pelaz, L.; Marques, L. A.