A. G. Cullis - Publications, H-index & Citations

A. G. Cullis

University of Sheffield

44H指数

252论文数

7.7K被引数

收录论文 21

发表时间

The 310-340nm ultraviolet light emitting diodes grown using a thin GaN interlayer on a high temperature AlN buffer

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2008-04-04

PREAI

Wang, T.; Lee, K. B.; Bai, J.; Parbrook, P. J.; Ranalli, F.; Wang, Q.; Airey, R. J.; Cullis, A. G.; Zhang, H. X.; Massoubre, D.; Gong, Z.; Watson, I. M.; Gu, E.; Dawson, M. D.

1.55 μm InAs quantum dots grown on a GaAs substrate using a GaAsSb metamorphic buffer layer

APPLIED PHYSICS LETTERS

IF3.6

2008-03-18

PREAI

Liu, H. Y.; Qiu, Y.; Jin, C. Y.; Walther, T.; Cullis, A. G.

Optimized Tersoff potential parameters for tetrahedrally bonded III-V semiconductors

PHYSICAL REVIEW B

IF3.7

2007-03-09

PREAI

Powell, D.; Migliorato, M. A.; Cullis, A. G.

Composition and strain dependence of the piezoelectric coefficients in InxGa1-xAs alloys

PHYSICAL REVIEW B

IF3.7

2006-12-29

OAAI

Migliorato, M. A.; Powell, D.; Cullis, A. G.; Hammerschmidt, T.; Srivastava, G. P.

Greatly improved performance of 340 nm light emitting diodes using a very thin GaN interlayer on a high temperature AlN buffer layer

APPLIED PHYSICS LETTERS

IF3.6

2006-08-25

PREAI

Wang, T.; Lee, K. B.; Bai, J.; Parbrook, P. J.; Airey, R. J.; Wang, Q.; Hill, G.; Ranalli, F.; Cullis, A. G.

Two-trap model for carrier lifetime and resistivity behavior in partially annealed GaAs grown at low temperature

PHYSICAL REVIEW B

IF3.7

2006-05-10

PREAI

Gregory, IS; Tey, CM; Cullis, AG; Evans, MJ; Beere, HE; Farrer, I

Effects of growth temperature on the structural and optical properties of 1.6 μm GaInNAs/GaAs multiple quantum wells

APPLIED PHYSICS LETTERS

IF3.6

2006-05-09

PREAI

Liu, H. Y.; Tey, C. M.; Jin, C. Y.; Liew, S. L.; Navaretti, P.; Hopkinson, M.; Cullis, A. G.

Surface elemental segregation and the Stranski-Krastanow epitaxial islanding transition

APPLIED SURFACE SCIENCE

IF6.9

2005-05-01

PREAI

Cullis, AG; Norris, DJ; Migliorato, MA; Hopkinson, M

Quantum-confined Stark shifts of charged exciton complexes in quantum dots

PHYSICAL REVIEW B

IF3.7

2004-11-24

121

PREAI

Finley, JJ; Sabathil, M; Vogl, P; Abstreiter, G; Oulton, R; Tartakovskii, AI; Mowbray, DJ; Skolnick, MS; Liew, SL; Cullis, AG; Hopkinson, M

Electron-beam-induced segregation in InGaN/GaN multiple-quantum wells (vol 83, pg 1965, 2003)

APPLIED PHYSICS LETTERS

IF3.6

2004-03-01

PREAI

O'Neill, JP; Ross, IM; Cullis, AG; Wang, T; Parbrook, PJ

Metastable rocksalt phase in epitaxial GaN on sapphire

APPLIED PHYSICS LETTERS

IF3.6

2003-10-06

PREAI

Lada, M; Cullis, AG; Parbrook, PJ; Hopkinson, M

Application of convergent beam electron diffraction to two-dimensional strain mapping in silicon devices

APPLIED PHYSICS LETTERS

IF3.6

2003-03-31

PREAI

Armigliato, A; Balboni, R; Carnevale, GP; Pavia, G; Piccolo, D; Frabboni, S; Benedetti, A; Cullis, AG

Stranski-Krastanow transition and epitaxial island growth

PHYSICAL REVIEW B

IF3.7

2002-08-15

131

PREAI

Cullis, AG; Norris, DJ; Walther, T; Migliorato, MA; Hopkinson, M

Influence of GaN barrier growth temperature on the photoluminescence of InGaN/GaN heterostructures

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2002-03-20

PREAI

Olaizola, SM; Pendlebury, ST; O'Neill, JP; Mowbray, DJ; Cullis, AG; Skolnick, MS; Parbrook, PJ; Fox, AM

Strain induced by Ti salicidation in sub-quarter-micron CMOS devices, as measured by TEM/CBED

APPLIED SURFACE SCIENCE

IF6.9

2002-03-01

PREAI

Benedetti, A; Cullis, AG; Armigliato, A; Balboni, R; Frabboni, S; Mastracchio, GF; Pavia, G

Atomistic simulation of strain relaxation in InxGa1-xAs/GaAs quantum dots with nonuniform composition -: art. no. 115316

PHYSICAL REVIEW B

IF3.7

2002-02-27

PREAI

Migliorato, MA; Cullis, AG; Fearn, M; Jefferson, JH

Picosecond intersubband dynamics in p-Si/SiGe quantum-well emitter structures

APPLIED PHYSICS LETTERS

IF3.6

2002-02-25

OAAI

Murzyn, P; Pidgeon, CR; Wells, JPR; Bradley, IV; Ikonic, Z; Kelsall, RW; Harrison, P; Lynch, SA; Paul, DJ; Arnone, DD; Robbins, DJ; Norris, D; Cullis, AG

Strain characterisation of shallow trench isolation structures on a nanometer scale by convergent beam electron diffraction

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2001-02-01

PREAI

Armigliato, A; Balboni, R; Frabboni, S; Benedetti, A; Cullis, AG; Carnevale, GP; Colpani, P; Pavia, G

Polarization effects in near-ground-state quantum wire lasers

APPLIED PHYSICS LETTERS

IF3.6

2000-11-06

PREAI

Percival, C; Woodhead, J; Houston, PA; Cullis, AG; Hill, G; Roberts, JS