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H. R. Harris

Texas Tech University System

31H指数
143论文数
4.3K被引数
收录论文 15
发表时间
Production rate measurement of Tritium and other cosmogenic isotopes in Germanium with CDMSlite
err2019-01-01
err23
errOAAI
errAgnese, R.; Aralis, T.; Aramaki, T.; Arnquist, I. J.; Azadbakht, E.; Baker, W.; Banik, S.; Barker, D.; Bauer, D. A.; Binder, T.; Bowles, M. A.; Brink, P. L.; Bunker, R.; Cabrera, B.; Calkins, R.; Cartaro, C.; Cerdeno, D. G.; Chang, Y. -Y.; Cooley, J.; Cornell, B.; Cushman, R.; Doughty, T.; Fascione, E.; Figueroa-Feliciano, E.; Fink, C. W.; Fritts, M.; Gerbier, G.; Germond, R.; Ghaith, M.; Golwala, S. R.; Harris, H. R.; Hong, Z.; Hoppe, E. W.; Hsu, L.; Huber, M. E.; Iyer, V.; Jardin, D.; Jastram, A.; Jena, C.; Kelsey, M. H.; Kennedy, A.; Kubik, A.; Kurinsky, N. A.; Lawrence, R. E.; Loer, B.; Asamar, E. Lopez; Lukens, P.; MacDonell, D.; Mahapatra, R.; Mandic, V.; Mast, N.; Miller, E.; Mirabolfathi, N.; Mohanty, B.; Mendoza, J. D. Morales; Nelson, J.; Orrell, J. L.; Oser, S. M.; Page, W. A.; Partridge, R.; Pepin, M.; Ponce, F.; Poudel, S.; Pyle, M.; Qiu, H.; Rau, W.; Reisetter, A.; Ren, R.; Reynolds, T.; Roberts, A.; Robinson, A. E.; Rogers, H. E.; Saab, T.; Sadoulet, B.; Sander, J.; Scarff, A.; Schnee, R. W.; Scorza, S.; Senapati, K.; Serfass, B.; Speller, D.; Stein, M.; Street, J.; Tanaka, H. A.; Toback, D.; Underwood, R.; Villano, A. N.; von Krosigk, B.; Watkins, S. L.; Wilson, J. S.; Wilson, M. J.; Winchell, J.; Wright, D. H.; Yellin, S.; Young, B. A.; Zhang, X.; Zhao, X.
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Energy loss due to defect formation from 206Pb recoils in SuperCDMS germanium detectors
err2018-08-27
err7
errOAAI
errAgnese, R.; Aralis, T.; Aramaki, T.; Arnquist, I. J.; Azadbakht, E.; Baker, W.; Banik, S.; Barker, D.; Bauer, D. A.; Binder, T.; Bowles, A.; Brink, P. L.; Bunker, R.; Cabrera, B.; Calkins, R.; Cartaro, C.; Cerdeno, D. G.; Chang, Y. -Y.; Cooley, J.; Cornell, B.; Cushman, P.; Di Stefano, P. C. F.; Doughty, T.; Fascione, E.; Figueroa-Feliciano, E.; Fink, C. W.; Fritts, M.; Gerbier, G.; Germond, R.; Ghaith, M.; Golwala, S. R.; Harris, H. R.; Hong, Z.; Hoppe, E. W.; Hsu, L.; Huber, M. E.; Iyer, V.; Jardin, D.; Jena, C.; Kelsey, M. H.; Kennedy, A.; Kubik, A.; Kurinsky, N. A.; Lawrence, R. E.; Loer, B.; Asamar, E. Lopez; Lukens, P.; MacDonell, D.; Mahapatra, R.; Mandic, V.; Mast, N.; Miller, E. H.; Mirabolfathi, N.; Mohanty, B.; Mendoza, J. D. Morales; Nelson, J.; Orrell, J. L.; Oser, S. M.; Page, W. A.; Partridge, R.; Pepin, M.; Ponce, F.; Poudel, S.; Pyle, M.; Qiu, H.; Rau, W.; Reisetter, A.; Ren, T.; Reynolds, T.; Roberts, A.; Robinson, A. E.; Rogers, H. E.; Saab, T.; Sadoulet, B.; Sander, J.; Scarff, A.; Schnee, R. W.; Scorza, S.; Senapati, K.; Serfass, B.; Speller, D.; Stein, M.; Street, J.; Tanaka, H. A.; Toback, D.; Underwood, R.; Villano, A. N.; Von Krosigk, B.; Watkins, S. L.; Wilson, J. S.; Wilson, M. J.; Winchell, J.; Wright, D. H.; Yellin, S.; Young, B. A.; Zhang, X.; Zhao, X.
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Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors
err2013-11-25
err11
errOAAI
errShin, H. S.; Yum, J. H.; Johnson, D. W.; Harris, H. R.; Hudnall, Todd. W.; Oh, J.; Kirsch, P.; Wang, W. -E.; Bielawski, C. W.; Banerjee, S. K.; Lee, J. C.; Lee, H. D.
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GaN stripes on vertical {111} fin facets of (110)-oriented Si substrates
err2010-02-15
err7
PREAI
errKuryatkov, V. V.; Feng, W.; Pandikunta, M.; Woo, J. H.; Garcia, D.; Harris, H. R.; Nikishin, S. A.; Holtz, M.
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High quality AlN for deep UV photodetectors
err2009-08-06
err54
PREAI
errNikishin, S.; Borisov, B.; Pandikunta, M.; Dahal, R.; Lin, J. Y.; Jiang, H. X.; Harris, H.; Holtz, M.
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Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning
err2008-03-04
err193
PREAI
errKirsch, P. D.; Sivasubramani, P.; Huang, J.; Young, C. D.; Quevedo-Lopez, M. A.; Wen, H. C.; Alshareef, H.; Choi, K.; Park, C. S.; Freeman, K.; Hussain, M. M.; Bersuker, G.; Harris, H. R.; Majhi, P.; Choi, R.; Lysaght, P.; Lee, B. H.; Tseng, H. -H.; Jammy, R.; Boescke, T. S.; Lichtenwalner, D. J.; Jur, J. S.; Kingon, A. I.
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Effective work function modification of atomic-layer-deposited-TaN film by capping layer覆盖层对原子层沉积TaN薄膜的有效功函数修饰
err2006-07-21
err44
PREAI
errChoi, K.; Alshareef, H. N.; Wen, H. C.; Harris, H.; Luan, H.; Senzaki, Y.; Lysaght, P.; Majhi, P.; Lee, B. H.
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Evaluation of titanium silicon nitride as gate electrodes for complementary metal-oxide semiconductor
err2006-04-07
err14
PREAI
errLuan, H; Alshareef, HN; Harris, HR; Wen, HC; Choi, K; Senzaki, Y; Majhi, P; Lee, BH
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Metal gate work function engineering using AlNx interfacial layers
err2006-03-16
err57
PREAI
errAlshareef, HN; Luan, HF; Choi, K; Harris, HR; Wen, HC; Quevedo-Lopez, MA; Majhi, P; Lee, BH
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Composition dependence of the work function of Ta1-xAlxNy metal gates - art. no. 072108
err2006-02-16
err39
PREAI
errAlshareef, HN; Choi, K; Wen, HC; Luan, H; Harris, H; Senzaki, Y; Majhi, P; Lee, BH; Jammy, R; Aguirre-Tostado, S; Gnade, BE; Wallace, RM
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Evaluation of tantalum silicon alloy systems as gate electrodes
err2005-11-18
err6
PREAI
errLuan, H; Alshareef, HN; Lysaght, PS; Harris, HR; Wen, HC; Choi, K; Senzaki, Y; Majhi, P; Lee, BH
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Modulation of the work function of silicon gate electrode using thin TaN interlayers
err2005-07-27
err5
PREAI
errAlshareef, HN; Wen, HC; Harris, HR; Choi, K; Luan, HF; Lysaght, P; Majhi, P; Lee, BH; El-Bouanani, M; Ukride, V
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Initial growth of interfacial oxide during deposition of HfO2 on silicon
err2004-07-12
err26
errOAAI
errChoi, K; Temkin, H; Harris, H; Gangopadhyay, S; Xie, L; White, M
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HfO2 gate dielectric with 0.5 nm equivalent oxide thickness
err2002-08-05
err87
errOAAI
errHarris, H; Choi, K; Mehta, N; Chandolu, A; Biswas, N; Kipshidze, G; Nikishin, S; Gangopadhyay, S; Temkin, H
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