W. Hänsch - Publications, H-index & Citations

W. Hänsch

Intel Corporation

18H指数

137论文数

1.8K被引数

收录论文 11

发表时间

Quantitative Field Emission Imaging for Studying the Doping-Dependent Emission Behavior of Silicon Field Emitter Arrays 用于研究硅场发射器阵列的掺杂相关发射行为的定量场发射成像

MICROMACHINES

IF3

2023-10-28

OAAI

Schels, Andreas; Herdl, Florian; Hausladen, Matthias; Wohlfartsstaetter, Dominik; Edler, Simon; Bachmann, Michael; Pahlke, Andreas; Schreiner, Rupert; Hansch, Walter

Knowledge management supporting education and research at a university cleanroom

KNOWLEDGE MANAGEMENT RESEARCH & PRACTICE

IF3.8

2017-12-19

PREAI

Nowack, Linda; Maul, Thomas; Kraus, Werner; Hansch, Walter

Simultaneous optical and electrical CO2 detection in one sensitive film

SENSORS AND ACTUATORS B-CHEMICAL

IF7.7

2017-03-01

PREAI

Henfling, M.; Gossner, U.; Kutter, C.; Hansch, W.; Trupp, S.

Impact-ionization field-effect-transistor based biosensors for ultra-sensitive detection of biomolecules

APPLIED PHYSICS LETTERS

IF3.6

2013-05-21

PREAI

Sarkar, Deblina; Gossner, Harald; Hansch, Walter; Banerjee, Kaustav

Tunnel-field-effect-transistor based gas-sensor: Introducing gas detection with a quantum-mechanical transducer

APPLIED PHYSICS LETTERS

IF3.6

2013-01-17

PREAI

Sarkar, Deblina; Gossner, Harald; Hansch, Walter; Banerjee, Kaustav

Gate-controlled resonant interband tunneling in silicon

APPLIED PHYSICS LETTERS

IF3.6

2004-09-06

PREAI

Sedlmaier, S; Bhuwalka, KK; Ludsteck, A; Schmidt, M; Schulze, J; Hansch, W; Eisele, I

Void formation and electromigration in sputtered Ag lines with different encapsulations 具有不同封装的溅射Ag线中的空隙形成和电迁移

SENSORS AND ACTUATORS A-PHYSICAL

IF4.9

2002-04-01

PREAI

Hauder, M; Gstöttner, J; Hansch, W; Schmitt-Landsiedel, D

Scaling properties and electromigration resistance of sputtered Ag metallization lines 溅射Ag金属化线的缩放特性和电迁移电阻

APPLIED PHYSICS LETTERS

IF3.6

2001-02-05

127

PREAI

Hauder, M; Gstöttner, J; Hansch, W; Schmitt-Landsiedel, D

Characterization of silicon/oxide/nitride layers by x-ray photoelectron spectroscopy

APPLIED PHYSICS LETTERS

IF3.6

1999-09-13

OAAI

Hansch, W; Nakajima, A; Yokoyama, S

Etching characteristics of Si and SiO2 with a low energy argon/hydrogen DC plasma source

SURFACE & COATINGS TECHNOLOGY

IF6.1

1997-12-01

PREAI

Strass, A; Hansch, W; Bieringer, P; Neubecker, A; Kaesen, F; Fischer, A; Eisele, I

SiO2 film growth at room temperature by plasma enhanced evaporation in an UHV chamber

VACUUM

IF3.9

1997-09-01

PREAI

Strass, A; Hansch, W; Neubecker, A; Bieringer, P; Fischer, A; Eisele, I

研究方向