Hideki Hasegawa - Publications, H-index & Citations

Hideki Hasegawa

Hokkaido University

37H指数

406论文数

5.3K被引数

收录论文 33

发表时间

Molecular-beam epitaxy and device applications of III-V semiconductor nanowires

MRS BULLETIN

IF4.9

2013-11-29

PREAI

Hasegawa, H; Fujikura, H; Okada, H

Observation of first and third harmonic responses in two-dimensional AlGaAs/GaAs HEMT devices due to plasma wave interaction

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2008-12-01

PREAI

Hashim, Abdul Manaf; Kasai, Seiya; Hasegawa, Hideki

Mechanism and control of current transport in GaN and AlGaN Schottky barriers for chemical sensor applications

APPLIED SURFACE SCIENCE

IF6.9

2008-04-01

PREAI

Hasegawa, Hideki; Akazawa, Masamichi

Dynamics and control of recombination process at semiconductor surfaces, interfaces and nano-structures

SOLAR ENERGY

IF6.6

2006-06-01

PREAI

Hasegawa, Hideki; Sato, Taketomo; Kasai, Seiya; Adamowicz, Boguslawa; Hashizume, Tamotsu

Self-assembled formation of uniform InP nanopore arrays by electrochemical anodization in HCl based electrolyte 在HCl基电解液中通过电化学阳极氧化自组装形成均匀的InP纳米孔阵列

APPLIED SURFACE SCIENCE

IF6.9

2006-05-01

OAAI

Sato, Taketomo; Fujino, Toshiyuki; Hasegawa, Hideki

Pt Schottky diode gas sensors formed on GaN and AlGaN/GaN heterostructure

APPLIED SURFACE SCIENCE

IF6.9

2005-05-01

PREAI

Matsuo, K; Negoro, N; Kotani, J; Hashizume, T; Hasegawa, H

APPLIED SURFACE SCIENCE

IF6.9

2005-05-01

OAAI

Shiozaki, N; Anantathanasarn, S; Sato, T; Hashizume, T; Hasegawa, H

Electrochemical processes for formation, processing and gate control of III-V semiconductor nanostructures

ELECTROCHIMICA ACTA

IF5.6

2005-05-01

OAAI

Hasegawa, H; Sato, T

Study on ECR dry etching and selective MBE growth of AlGaN/GaN for fabrication of quantum nanostructures on GaN (0001) substrates

APPLIED SURFACE SCIENCE

IF6.9

2005-05-01

OAAI

Oikawa, T; Ishikawa, F; Sato, T; Hashizume, T; Hasegawa, H

Computer simulation of current transport in GaN and AlGaN Schottky diodes based on thin surface barrier model 基于薄表面势垒模型的GaN和AlGaN肖特基二极管中电流传输的计算机模拟

APPLIED SURFACE SCIENCE

IF6.9

2004-10-01

PREAI

Kotani, J; Hasegawa, H; Hashizume, T

Evolution mechanism of heterointerface cross-section during growth of GaAs ridge quantum wires by selective molecular beam epitaxy

APPLIED SURFACE SCIENCE

IF6.9

2004-07-01

OAAI

Sato, T; Tamai, I; Yoshida, S; Hasegawa, H

Leakage mechanism in GaN and AlGaN schottky interfaces GaN和AlGaN肖特基界面中的泄漏机制

APPLIED PHYSICS LETTERS

IF3.6

2004-06-14

218

PREAI

Hashizume, T; Kotani, J; Hasegawa, H

Plasma wave interactions in the microwave to THz range between carriers in a semiconductor 2DEG and interdigital slow waves

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2003-09-01

PREAI

Hashim, AM; Hashizume, T; Iizuka, K; Hasegawa, H

Fabrication of BDD quantum node switches on embedded GaAs quantum wires grown by selective MBE

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2003-09-01

PREAI

Yumoto, M; Tamura, T; Sato, T; Hasegawa, H

Cathodoluminescence in-depth spectroscopy study of AlGaN/GaN heterostructures

APPLIED SURFACE SCIENCE

IF6.9

2003-05-01

PREAI

Ishikawa, F; Hasegawa, H

Scanned-probe topological and spectroscopic study of surface states on clean and Si-deposited GaAs (001)-c(4 x 4) surfaces 清洁和Si沉积的GaAs (001)-c(4 x4) 表面上的表面状态的扫描探针拓扑和光谱研究

APPLIED SURFACE SCIENCE

IF6.9

2002-05-01

PREAI

Negoro, N; Kasai, S; Hasegawa, H

III-V quantum devices and circuits based on nanoscale Schottky gate control of hexagonal quantum wire networks

APPLIED SURFACE SCIENCE

IF6.9

2002-05-01

OAAI

Kasai, S; Hasegawa, H

Effects of nitrogen addition on methane-based ECR plasma etching of gallium nitride

APPLIED SURFACE SCIENCE

IF6.9

2002-05-01

PREAI

Jin, Z; Hashizume, T; Hasegawa, H

Gate control characteristics in GaAs nanometer-scale Schottky wrap gate structures

APPLIED SURFACE SCIENCE

IF6.9

2002-05-01

PREAI

Yumoto, M; Kasai, S; Hasegawa, H

Depth-resolved cathodoluminescence characterization of buried InGaP/GaAs heterointerfaces

APPLIED SURFACE SCIENCE

IF6.9

2002-05-01

PREAI

Ishikawa, F; Hasegawa, H

研究方向