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收藏Thickness Limitation of Band-to-Band Tunneling Process in GaAsSb/InGaAs Type-II Tunnel Junctions Designed for Multi-Junction Solar Cells设计用于多结太阳能电池的GaAsSb/InGaAs II型隧道结中带间隧穿过程的厚度限制
Louarn, K.; Claveau, Y.; Fontaine, C.; Arnoult, A.; Marigo-Lombart, L.; Massiot, I.; Piquemal, F.; Bounouh, A.; Cavassilas, N.; Almuneau, G.
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收藏Nanophotonics-based low-temperature PECVD epitaxial crystalline silicon solar cells
Chen, Wanghua; Cariou, Romain; Foldyna, Martin; Depauw, Valerie; Trompoukis, Christos; Drouard, Emmanuel; Lalouat, Loic; Harouri, Abdelmounaim; Liu, Jia; Fave, Alain; Orobtchouk, Regis; Mandorlo, Fabien; Seassal, Christian; Massiot, Ines; Dmitriev, Alexandre; Lee, Ki-Dong; Roca i Cabarrocas, Pere
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收藏Ultrathin PECVD epitaxial Si solar cells on glass via low-temperature transfer process
Cariou, Romain; Chen, Wanghua; Cosme-Bolanos, Ismael; Maurice, Jean-Luc; Foldyna, Martin; Depauw, Valerie; Patriarche, Gilles; Gaucher, Alexandre; Cattoni, Andrea; Massiot, Ines; Collin, Stephane; Cadel, Emmanuel; Pareige, Philippe; Roca i Cabarrocas, Pere
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