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P

P. Murugapandiyan

department of electronics and communication engineering

15H指数
61论文数
587被引数
收录论文 10
发表时间
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Lattice-matched InAlN/GaN high-electron-mobility transistors (HEMTs)晶格匹配的InAlN/GaN高电子迁移率晶体管(HEMTs)
errJournal of Materials Science
IF3.9
err2025-07-30
err0
PREAI
errS. Ravi; C. Priya; A. Mohanbabu; S. Maheswari; A. Lakshmi Narayana; P. Murugapandiyan
err分享
err收藏
Advancing the frontiers of N-polar GaN HEMT technology: materials, architectures, and applications in RF and power electronics推进N极性GaN HEMT技术的边界：材料、架构及其在射频和电力电子中的应用
errMaterials Science in Semiconductor Processing
IF4.6
err2025-07-22
err0
PREAI
errC. Arul Murugan; P. Murugapandiyan; C. Sivamani; D. Haripriya
err分享
err收藏
Recent advancement in ScAlN/GaN high electron mobility transistors: Materials, properties, and device performanceScAlN/GaN高电子迁移率晶体管的最新进展：材料、性能和器件性能
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2025-07-01
err0
PREAI
errMurugapandiyan, P.; Maheswari, S.; Fletcher, A. S. Augustine; Saranya, G.; Anandan, P.
err分享
err收藏
Ultra-scaled 55 nm InAlN/InGaN/GaN/AlGaN HEMT on β-Ga2O3 substrate: A TCAD-Based performance analysis for high-frequency power applications超缩放55 nm InAlN/InGaN/GaN/AlGaN HEMT在β-Ga₂O₃衬底上的TCAD基性能分析：面向高频功率应用
errMICRO AND NANOSTRUCTURES
IF3
err2025-05-28
err0
PREAI
errRevathy, A.; Thangam, R.; Haripriya, D.; Maheswari, S.; Murugapandiyan, P.
err分享
err收藏
Influence of AlN passivation on thermal performance of AlGaN/GaN high-electron mobility transistors on sapphire substrate: A simulation study
errMATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
IF4.6
err2021-11-01
err7
errOAAI
errMurugapandiyan, P.; Nirmal, D.; Hasan, Md Tanvir; Varghese, Arathy; Ajayan, J.; Fletcher, A. S. Augustine; Ramkumar, N.
err分享
err收藏
Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications
errJOURNAL OF SCIENCE-ADVANCED MATERIALS AND DEVICES
IF6.8
err2020-06-01
err22
errOAAI
errMurugapandiyan, P.; Mohanbabu, A.; Lakshmi, V. Rajya; Ramakrishnan, V. N.; Varghese, Arathy; Mohd, Wasim; Baskaran, S.; Kumar, R. Saravana; Janakiraman, V.
err分享
err收藏
Static and dynamic characteristics of Lg 50 nm InAlN/AlN/GaN HEMT with AlGaN back-barrier for high power millimeter wave applications
errJOURNAL OF SCIENCE-ADVANCED MATERIALS AND DEVICES
IF6.8
err2017-12-01
err15
errOAAI
errMurugapandiyan, P.; Ravimaran, S.; William, J.
err分享
err收藏
Design and analysis of 30 nm T-gate InAlN/GaN HEMT with AlGaN back-barrier for high power microwave applications
errSUPERLATTICES AND MICROSTRUCTURES
IF3.3
err2017-11-01
err28
PREAI
errMurugapandiyan, P.; Ravimaran, S.; William, J.; Sundaram, K. Meenakshi
err分享
err收藏
DC and microwave characteristics of 20 nm T-gate InAlN/GaN high electron mobility transistor for high power RF applications
errSUPERLATTICES AND MICROSTRUCTURES
IF3.3
err2017-09-01
err14
PREAI
errMurugapandiyan, P.; Ravimaran, S.; William, J.; Ajayan, J.; Nirmal, D.
err分享
err收藏
DC and microwave characteristics of Lg 50 nm T-gate InAlN/AlN/GaN HEMT for future high power RF applications
errAEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS
IF3.2
err2017-07-01
err25
PREAI
errMurugapandiyan, P.; Ravimaran, S.; William, J.
err分享
err收藏

研究方向

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合作学者
合作期刊
R
Ramar Thangam
H 指数: 43 · 论文数: 111
J
J. Ajayan
H 指数: 32 · 论文数: 234
D
D. Nirmal
H 指数: 32 · 论文数: 199
P
P. Anandan
H 指数: 25 · 论文数: 92
A
Arathy Varghese
H 指数: 18 · 论文数: 45
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