J. Ajayan - Publications, H-index & Citations

J. Ajayan

the icfai foundation for higher education (ifhe)

32H指数

234论文数

3.5K被引数

收录论文 55

发表时间

Thermal Dynamics of 7 nm FinFET Process Cascode Cross Coupled Double Tail Dynamic Comparator for Future Analog to Digital Converters

Semiconductors

IF0.6

2025-11-01

PREAI

Yedulapuram, Sharvani; Ajayan, J.; Panigrahy, Asisa Kumar; Joseph, L. M. I. Leo

Improvement of radiation hardness for a novel InP-based HEMT with graded In1-xGaxAs channel layer and double Si-doped structure 基于InP的具有渐变In1-xGaxAs通道层和双Si掺杂结构的HEMT新型器件的辐射硬度提升

Results in Engineering

IF7.9

2025-10-31

OAAI

Shuxiang Sun; Xintong Xie; Hongying Mei; Xiaorong Luo; J. Ajayan

Inorganic Nanocatalysts for Energy Systems, Environmental/Industrial Processes and Healthcare Applications : A Comprehensive Review 无机纳米催化剂在能源系统、环境/工业过程及医疗保健应用：综合评述

Materials Today Sustainability

IF7.9

2025-10-04

OAAI

J. Ajayan; S. Sreejith; B. Mounika; A.S. Augustine Fletcher; Ribu Mathew; M. Saravanan; Puneet Sharma

Thermal dynamics of 7-nm FinFET process-based negative edge triggered (NET) TSPC D flip-flop for future AI and IoT applications 用于未来AI和IoT应用的基于7 nm FinFET工艺的负边沿触发 (NET) TSPC D触发器的热动力学

JOURNAL OF THE KOREAN PHYSICAL SOCIETY

IF0.9

2025-10-01

PREAI

Juveria, Syeda Hurmath; Shashank, R.; Panigrahy, Asisa Kumar; Ajayan, J.

Thermal Reliability Analysis for 7-nm FinFET Based Positive Edge Triggered TSPC Flip-Flop for Future IoT and AI Applications 7-nm FinFET基正边沿触发TSPC触发器的热可靠性分析，面向未来物联网和AI应用

Circuits Systems and Signal Processing

IF2

2025-10-01

PREAI

Juveria, Syeda Hurmath; Ajayan, J.; Shashank, R.

Enhancing the Performance of InGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors for Future Radio-Frequency Power Amplifiers 提升InGaN/GaN金属-氧化物-半导体高电子迁移率晶体管在未来射频功率放大器中的性能

SEMICONDUCTORS

IF5.3

2025-10-01

PREAI

Repaka, Lavanya; Ajayan, J.; Bhattacharya, Sandip

Evaluating Structural Parameter Variations in AlGaN/GaN HEMTs on Si with Step-Graded InGaN Layers for future Radar and RF Transmitters 评估在Si上具有阶梯渐变InGaN层的AlGaN/GaN HEMTs的结构参数变化，以用于未来的雷达和RF发射机

NATIONAL ACADEMY SCIENCE LETTERS-INDIA

IF1.3

2025-10-01

PREAI

Akshaykranth, A.; Ajayan, J.; Bhattacharya, Sandip

Recent progress in nanomaterial based acoustic wave sensors: a review 基于纳米材料的声波传感器最新进展：综述

Measurement

IF5.6

2025-09-24

PREAI

S. Sreejith; J. Ajayan; N.V. Uma Reddy; V.T. Vijumon; M. Manikandan

Recent developments in AlGaN/GaN MOSHEMTs for future high power RF electronics: A review 近期AlGaN/GaN MOSHEMTs在高功率RF电子器件领域的最新进展：综述

Micro and Nanostructures

IF3

2025-09-11

PREAI

K. Ratna; J. Ajayan; B. Mounika

A comprehensive review of green hydrogen technologies for clean energy futures 绿色氢能技术用于清洁能源未来的综合综述

JOURNAL OF THE KOREAN PHYSICAL SOCIETY

IF0.9

2025-09-01

PREAI

Sreejith, S.; Panigrahy, Asisa Kumar; Ajayan, J.; Uma Reddy, N. V.; Dev, R. S. Syam

NC-ROLL-FIA: Negative capacitance FET based designs for robust logic locking against fault injection attacks enabling trustworthy hardware for edge AI devices NC-ROLL-FIA：基于负电容FET的设计，用于在抵抗故障注入攻击方面实现鲁棒逻辑锁定，以支持边缘AI设备的可信硬件

Results in Engineering

IF7.9

2025-08-26

OAAI

Kadiyam Tirumalarao; Ramesh Vaddi; M. Durga Prakash; Asisa Kumar Panigrahy; J. Ajayan; Amit Krishna Dwivedi

Improved DC and RF Characteristics of GaN HEMT Using a Back-Barrier and Locally Doped Barrier Layer 采用背势垒和局部掺杂势垒层的GaN HEMT的直流和射频特性提升

micromachines

IF0

2025-08-09

OAAI

Shuxiang Sun; Lulu Liu; Gangchuan Qu; Xintong Xie; J. Ajayan

Impact of gate metals/high-K materials and lateral scaling on the performance of AlN/GaN/AlGaN-MOSHEMT on SiC wafer for future microwave power amplifiers in RADAR & communication systems

RESULTS IN ENGINEERING

IF7.9

2025-03-01

OAAI

Deshpande, Gauri; Ajayan, J.; Bhattacharya, Sandip; Mounika, B.; Dwivedi, Amit Krishna; Nirmal, D.

Aggressively scaled T-Gated GaN-on-silicon RF power HEMT featuring step graded SRL-AlGaN buffer for next generation broad band power amplifiers

RESULTS IN ENGINEERING

IF7.9

2025-03-01

OAAI

Akshaykranth, A.; Ajayan, J.; Bhattacharya, Sandip; Nirmal, D.; Paramasivam, Santhosh; Gatto, Gianluca; Kumar, Amit

Challenges and Advances in Materials and Fabrication Technologies for the Development of p-GaN Gated E-Mode AlGaN/GaN Power HEMTs: A Critical Review P-gan栅控E型AlGaN/GaN功率hemt的材料和制造技术的挑战和进展: 评论

IEEE ACCESS

IF3.6

2025-01-01

OAAI

Ajayan, J.; Sreenivasulu, Vakkalakula Bharath; Kumari, N. Aruna; Sreejith, S.; Das, Subhajit

LG = 50 nm T-gated and Fe-doped double quantum well GaN-HEMT on SiC wafer with graded AlGaN barrier for future power electronics applications

JOURNAL OF SCIENCE-ADVANCED MATERIALS AND DEVICES

IF6.8

2024-12-01

OAAI

Mounika, B.; Ajayan, J.; Bhattacharya, Sandip; Nirmal, D.; Dwivedi, Amit Krishna

Recent advances in nano biosensors: An overview

MEASUREMENT

IF5.6

2024-08-01

PREAI

Sreejith, S.; Ajayan, J.; Radhika, J. M.; Reddy, N. V. Uma; Manikandan, M.

Terahertz sensors for next generation biomedical and other industrial electronics applications: A critical review 下一代生物医学和其他工业电子应用的太赫兹传感器: 严格审查

SENSORS AND ACTUATORS A-PHYSICAL

IF4.9

2024-04-01

PREAI

Ajayan, J.; Sreejith, S.; Manikandan, M.; Lai, Wen-Cheng; Saha, Sumit

2.5 A/mm/350 GHz aggressively scaled gate engineered Fe-doped AlN/ GaN channel HEMT with graded InGaN Backbarrier on SiC-wafer for next generation RF power electronics applications

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS

IF4.6

2024-03-01

PREAI

Mounika, B.; Ajayan, J.; Bhattacharya, Sandip

A comparative study of AlGaN and BAlGaN based ultraviolet quantum well-based light emitting diodes AlGaN和BAlGaN基紫外量子阱发光二极管的比较研究

OPTICAL AND QUANTUM ELECTRONICS

IF4

2024-02-09

OAAI

Dhivyasri, G.; Manikandan, M.; Ajayan, J.; Sreejith, S.; Remya, R.; Nirmal, D.

研究方向