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V
Ville‐Markus Korpijärvi
Tampere University
H指数:
16
被引数:
746
浏览量:
0
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23
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发表时间最新
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Frequency-doubled passively Q-switched microchip laser producing 225 ps pulses at 671 nm
OPTICS LETTERS
IF
3.3
2016-11-15
4
PRE
Toward the Atomically Abrupt Interfaces of SiOx/Semiconductor Junctions
ADVANCED MATERIALS INTERFACES
IF
4.4
2016-03-01
3
PRE
AI
High-power temperature-stable GaInNAs distributed Bragg reflector laser emitting at 1180 nm
OPTICS LETTERS
IF
3.3
2016-02-03
18
PRE
AI
Monolithic GaInNAsSb/GaAs VECSEL Operating at 1550 nm
单片GaInNAsSb/GaAs VECSEL工作在1550 nm
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
IF
5.1
2015-11-01
24
PRE
AI
Observation of unusual metal-semiconductor interaction and metal-induced gap states at an oxide-semiconductor interface: The case of epitaxial BaO/Ge(100) junction
PHYSICAL REVIEW B
IF
3.7
2015-10-20
6
PRE
AI
615 nm GaInNAs VECSEL with output power above 10 W
OPTICS EXPRESS
IF
3.3
2015-07-27
19
OA
AI
Circular polarization switching and bistability in an optically injected 1300 nm spin-vertical cavity surface emitting laser
APPLIED PHYSICS LETTERS
IF
3.6
2015-01-15
33
OA
AI
Control of emitted light polarization in a 1310 nm dilute nitride spin-vertical cavity surface emitting laser subject to circularly polarized optical injection
APPLIED PHYSICS LETTERS
IF
3.6
2014-11-05
23
OA
AI
Unveiling and controlling the electronic structure of oxidized semiconductor surfaces: Crystalline oxidized InSb(100)(1 x 2)-O
PHYSICAL REVIEW B
IF
3.7
2014-07-29
12
PRE
AI
Composition dependent growth dynamics in molecular beam epitaxy of GaInNAs solar cells
SOLAR ENERGY MATERIALS AND SOLAR CELLS
IF
6.3
2014-05-01
44
PRE
AI
Optical gain in 1.3-μm electrically driven dilute nitride VCSOAs
NANOSCALE RESEARCH LETTERS
IF
4.1
2014-01-13
4
OA
AI
Synthesis and Characterization of Layered Tin Monoxide Thin Films with Monocrystalline Structure on III-V Compound Semiconductor
ADVANCED MATERIALS INTERFACES
IF
4.4
2013-12-27
2
PRE
AI
Growth and properties of crystalline barium oxide on the GaAs(100) substrate
APPLIED PHYSICS LETTERS
IF
3.6
2013-11-05
5
PRE
AI
Temperature and magnetic field effect on oscillations observed in GaInNAs/GaAs multiple quantum wells structures
温度和磁场对GaInNAs/GaAs多量子阱结构中观察到的振荡的影响
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
IF
4.6
2012-06-01
9
PRE
AI
Optically-pumped dilute nitride spin-VCSEL
OPTICS EXPRESS
IF
3.3
2012-01-30
59
OA
AI
11 W single gain-chip dilute nitride disk laser emitting around 1180 nm
OPTICS EXPRESS
IF
3.3
2010-11-23
38
OA
Contactless electroreflectance study of band bending in Be-doped GaInNAs/GaAs quantum wells: The origin of photoluminescence enhancement
APPLIED PHYSICS LETTERS
IF
3.6
2010-07-12
2
PRE
AI
The influence of As/III pressure ratio on nitrogen nearest-neighbor environments in as-grown GaInNAs quantum wells
APPLIED PHYSICS LETTERS
IF
3.6
2009-12-31
7
PRE
AI
An effect of As flux on GaAs/AlAs quantum wells: A combined photoluminescence and reflection high-energy electron diffraction study
APPLIED SURFACE SCIENCE
IF
6.9
2008-12-01
4
PRE
AI
Passively mode-locked GaInNAs disk laser operating at 1220 nm
OPTICS EXPRESS
IF
3.3
2008-09-24
18
OA
研究方向
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合作学者
合作期刊
合作次数
合作次数
H指数
论文数
被引数
M
Mircea Guină
H 指数:
38
论文数:
744
被引数:
7,001
P
P. Laukkanen
H 指数:
26
论文数:
181
被引数:
2,551
J
Janne Puustinen
H 指数:
19
论文数:
79
被引数:
932
M
M. Punkkinen
H 指数:
25
论文数:
212
被引数:
2,602
K
K. Kokko
H 指数:
24
论文数:
191
被引数:
2,404
M
M. Kuzmin
H 指数:
18
论文数:
196
被引数:
1,524
A
Antti Tukiainen
H 指数:
24
论文数:
169
被引数:
2,002
M
M. Tuominen
H 指数:
15
论文数:
54
被引数:
904
J
Janne Pakarinen
H 指数:
24
论文数:
85
被引数:
1,456
M
M. Pessa
H 指数:
42
论文数:
642
被引数:
8,169