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Ville‐Markus Korpijärvi

Tampere University
H指数:16
被引数:746
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Frequency-doubled passively Q-switched microchip laser producing 225 ps pulses at 671 nm
2016-11-154
PRE
Toward the Atomically Abrupt Interfaces of SiOx/Semiconductor Junctions
2016-03-013
PREAI
High-power temperature-stable GaInNAs distributed Bragg reflector laser emitting at 1180 nm
2016-02-0318
PREAI
Monolithic GaInNAsSb/GaAs VECSEL Operating at 1550 nm

单片GaInNAsSb/GaAs VECSEL工作在1550 nm

2015-11-0124
PREAI
Observation of unusual metal-semiconductor interaction and metal-induced gap states at an oxide-semiconductor interface: The case of epitaxial BaO/Ge(100) junction
2015-10-206
PREAI
615 nm GaInNAs VECSEL with output power above 10 W
2015-07-2719
OAAI
Circular polarization switching and bistability in an optically injected 1300 nm spin-vertical cavity surface emitting laser
2015-01-1533
OAAI
Control of emitted light polarization in a 1310 nm dilute nitride spin-vertical cavity surface emitting laser subject to circularly polarized optical injection
2014-11-0523
OAAI
Unveiling and controlling the electronic structure of oxidized semiconductor surfaces: Crystalline oxidized InSb(100)(1 x 2)-O
2014-07-2912
PREAI
Composition dependent growth dynamics in molecular beam epitaxy of GaInNAs solar cells
2014-05-0144
PREAI
Optical gain in 1.3-μm electrically driven dilute nitride VCSOAs
2014-01-134
OAAI
Synthesis and Characterization of Layered Tin Monoxide Thin Films with Monocrystalline Structure on III-V Compound Semiconductor
2013-12-272
PREAI
Growth and properties of crystalline barium oxide on the GaAs(100) substrate
2013-11-055
PREAI
Temperature and magnetic field effect on oscillations observed in GaInNAs/GaAs multiple quantum wells structures

温度和磁场对GaInNAs/GaAs多量子阱结构中观察到的振荡的影响

2012-06-019
PREAI
Optically-pumped dilute nitride spin-VCSEL
2012-01-3059
OAAI
11 W single gain-chip dilute nitride disk laser emitting around 1180 nm
2010-11-2338
OA
Contactless electroreflectance study of band bending in Be-doped GaInNAs/GaAs quantum wells: The origin of photoluminescence enhancement
2010-07-122
PREAI
The influence of As/III pressure ratio on nitrogen nearest-neighbor environments in as-grown GaInNAs quantum wells
2009-12-317
PREAI
An effect of As flux on GaAs/AlAs quantum wells: A combined photoluminescence and reflection high-energy electron diffraction study
2008-12-014
PREAI
Passively mode-locked GaInNAs disk laser operating at 1220 nm
2008-09-2418
OA