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H

Hiroshi Ishiwara

Institute of Science Tokyo

51H指数
617论文数
9.4K被引数
收录论文 26
发表时间
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The flexible non-volatile memory devices using oxide semiconductors and ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene)
errAPPLIED PHYSICS LETTERS
IF3.6
err2011-07-06
err85
PREAI
errLee, Gwang-Geun; Tokumitsu, Eisuke; Yoon, Sung-Min; Fujisaki, Yoshihisa; Yoon, Joo-Won; Ishiwara, Hiroshi
err分享
err收藏
Impact of interface controlling layer of Al2O3 for improving the retention behaviors of In-Ga-Zn oxide-based ferroelectric memory transistor
errAPPLIED PHYSICS LETTERS
IF3.6
err2010-06-10
err42
PREAI
errYoon, Sung-Min; Yang, Shin-Hyuk; Jung, Soon-Won; Byun, Chun-Won; Park, Sang-Hee Ko; Hwang, Chi-Sun; Lee, Gwang-Geun; Tokumitsu, Eisuke; Ishiwara, Hiroshi
err分享
err收藏
Nonvolatile Memory Thin Film Transistors Using Spin-Coated Amorphous Zinc Indium Oxide Channel and Ferroelectric Copolymer
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2010-01-01
err4
errOAAI
errYoon, Sung-Min; Jung, Soon-Won; Yang, Shin-Hyuk; Byun, Chun-Won; Hwang, Chi-Sun; Ishiwara, Hiroshi
err分享
err收藏
Variation of leakage current mechanisms by ion substitution in BiFeO3 thin films
errAPPLIED PHYSICS LETTERS
IF3.6
err2009-09-17
err97
PREAI
errZhong, Zhiyong; Ishiwara, Hiroshi
err分享
err收藏
Capacitance-voltage and retention characteristics of Pt/SrBi2Ta2O9/HfO2/Si structures with various buffer layer thickness
errAPPLIED PHYSICS LETTERS
IF3.6
err2009-05-29
err55
PREAI
errTang, M. H.; Sun, Z. H.; Zhou, Y. C.; Sugiyama, Y.; Ishiwara, H.
err分享
err收藏
Effect of Ba and Zr doping in Sr0.8Bi2.2Ta2O9 thin films
errMATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
IF4.6
err2009-04-01
err8
PREAI
errBozgeyik, Mehmet S.; Cross, J. S.; Ishiwara, H.; Shinozaki, K.
err分享
err收藏
Impact of Kr gas mixing in oxygen plasma etching of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer films
errAPPLIED PHYSICS LETTERS
IF3.6
err2008-10-23
err7
PREAI
errYoon, Joo-Won; Ohmi, Shun-ichiro; Park, Byung-Eun; Ishiwara, Hiroshi
err分享
err收藏
Excellent ferro electricity of thin poly(vinylidene fluoride-trifluoro ethylene) copolymer films and low voltage operation of capacitors and diodes
errIEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL
IF3.7
err2007-12-01
err11
PREAI
errFujisaki, Sumiko; Fujisaki, Yoshihisa; Ishiwara, Hiroshi
err分享
err收藏
Reduced leakage current in La and Ni codoped BiFeO3 thin films
errAPPLIED PHYSICS LETTERS
IF3.6
err2007-09-14
err172
PREAI
errSingh, S. K.; Maruyama, K.; Ishiwara, H.
err分享
err收藏
(111)-textured Mn-substituted BiFeO3 thin films on SrRuO3/Pt/Ti/SiO2/Si structures
errAPPLIED PHYSICS LETTERS
IF3.6
err2007-06-14
err47
PREAI
errSingh, S. K.; Menou, N.; Funakubo, H.; Maruyama, K.; Ishiwara, H.
err分享
err收藏
The influence of La-substitution on the micro-structure and ferroelectric properties of chemical-solution-deposited BiFeO3 thin films
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2007-04-19
err99
PREAI
errSingh, S. K.; Maruyama, K.; Ishiwara, H.
err分享
err收藏
Low-voltage operation of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer capacitors and metal-ferroelectric-insulator-semiconductor diodes
errAPPLIED PHYSICS LETTERS
IF3.6
err2007-04-17
err184
PREAI
errFujisaki, Sumiko; Ishiwara, Hiroshi; Fujisaki, Yoshihisa
err分享
err收藏
Room temperature ferroelectric properties of Mn-substituted BiFeO3 thin films deposited on Pt electrodes using chemical solution deposition
errAPPLIED PHYSICS LETTERS
IF3.6
err2006-06-30
err370
PREAI
errSingh, S. K.; Ishiwara, H.; Maruyama, K.
err分享
err收藏
Epitaxial BiFeO3 thin films fabricated by chemical solution deposition
errAPPLIED PHYSICS LETTERS
IF3.6
err2006-04-19
err109
PREAI
errSingh, SK; Kim, YK; Funakubo, H; Ishiwara, H
err分享
err收藏
Five-day-long ferroelectric memory effect in Pt/(Bi,La)4Ti3O12/HfO2/Si structures
errAPPLIED PHYSICS LETTERS
IF3.6
err2004-11-08
err59
PREAI
errPark, BE; Takahashi, K; Ishiwara, H
err分享
err收藏
Impact of HfO2 buffer layers on data retention characteristics of ferroelectric-gate field-effect transistors
errAPPLIED PHYSICS LETTERS
IF3.6
err2004-10-11
err105
PREAI
errAizawa, K; Park, BE; Kawashima, Y; Takahashi, K; Ishiwara, H
err分享
err收藏
Electrical characteristics for Lu2O3 thin films fabricated by E-beam deposition method
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2004-01-01
err58
PREAI
errOhmi, S; Takeda, M; Ishiwara, H; Iwai, H
err分享
err收藏
Polarization enhancement and coercive field reduction in W- and Mo-doped Bi3.35La0.75Ti3O12 thin films
errAPPLIED PHYSICS LETTERS
IF3.6
err2003-04-14
err113
errOAAI
errWang, XS; Ishiwara, H
err分享
err收藏
Characterization of La2O3 and Yb2O3 thin films for high-k gate insulator application
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2003-01-01
err127
PREAI
errOhmi, S; Kobayashi, C; Kashiwagi, I; Ohshima, C; Ishiwara, H; Iwai, H
err分享
err收藏
Impact of face-to-face annealing in preparation of sol-gel-derived SrBi2Ta2O9 thin films
errAPPLIED PHYSICS LETTERS
IF3.6
err2000-05-01
err61
errOAAI
errAizawa, K; Tokumitsu, E; Okamoto, K; Ishiwara, H
err分享
err收藏

研究方向

暂无研究方向
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