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Liqiang Yao

xia men university

H指数:5

被引数:74

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Hyper Self-Doping of GeIn for Cost-Effective Ge PIN Photodiodes with Record-Low Dark Current

GeIn的高自掺杂用于具有创纪录低暗电流的成本效益型Ge PIN光电二极管

IF6.7

2025-05-080

PRE

Separation of wafer bonding interface from heterogenous mismatched interface achieved high quality bonded Ge-Si heterojunction

晶圆键合界面与异质失配界面的分离实现了高质量的键合ge-si异质结

APPLIED SURFACE SCIENCE

IF6.9

2024-07-010

PRE

Performance enhancement of Ge/Si avalanche photodetector by specific sidewall passivation using remote oxygen plasma treatment

通过使用远程氧等离子体处理的特定侧壁钝化来增强Ge/Si雪崩光电探测器的性能

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2024-05-220

PRE

Resonant-cavity-enhanced 4H-SiC thin film MSM UV photodetectors on SiO2/Si substrates

SiO2/Si衬底上谐振腔增强型4H-SiC薄膜MSM紫外光电探测器

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2024-03-204

PRE

InGaAs/Si PIN photodetector with low interfacial recombination rates realized by wafer bonding with a polycrystalline Si interlayer

通过与多晶硅中间层的晶片键合实现了具有低界面复合率的InGaAs/Si PIN光电探测器

APPLIED PHYSICS LETTERS

IF3.6

2024-03-181

PRE

Low dark current lateral Ge PIN photodetector array with resonant cavity effect for short wave infrared imaging

用于短波红外成像的谐振腔效应低暗电流横向Ge PIN光电探测器阵列

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2024-01-304

PRE

Strain-induced abnormal Ge/Si inter-diffusion during hetero-epitaxy process

IF3.9

2022-02-013

PRE

Dislocation nucleation triggered by thermal stress during Ge/Si wafer bonding process at low annealing temperature

APPLIED SURFACE SCIENCE

IF6.9

2021-12-0111

PRE