B. G. Svensson - Publications, H-index & Citations

B. G. Svensson

University of Manchester

24H指数

81论文数

1.7K被引数

收录论文 18

发表时间

Impact of proton irradiation on conductivity and deep level defects in β-Ga2O3

APL MATERIALS

IF4.5

2018-12-14

180

OAAI

Ingebrigtsen, M. E.; Kuznetsov, A. Yu.; Svensson, B. G.; Alfieri, G.; Mihaila, A.; Badstubner, U.; Perron, A.; Vines, L.; Varley, J. B.

Zn vacancy as a polaronic hole trap in ZnO

PHYSICAL REVIEW B

IF3.7

2017-03-10

OAAI

Frodason, Y. K.; Johansen, K. M.; Bjorheim, T. S.; Svensson, B. G.; Alkauskas, A.

Epitaxial Strain-Induced Growth of CuO at Cu2O/ZnO Interfaces

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2016-10-07

PREAI

Gunnaes, A. E.; Gorantla, S.; Lovvik, O. M.; Gan, J.; Carvalho, P. A.; Svensson, B. G.; Monakhov, E. V.; Bergum, K.; Jensen, I. T.; Diplas, S.

H passivation of Li on Zn-site in ZnO: Positron annihilation spectroscopy and secondary ion mass spectrometry

PHYSICAL REVIEW B

IF3.7

2011-09-14

OAAI

Johansen, K. M.; Zubiaga, A.; Tuomisto, F.; Monakhov, E. V.; Kuznetsov, A. Yu; Svensson, B. G.

The oxygen dimer in Si: Its relationship to the light-induced degradation of Si solar cells?

APPLIED PHYSICS LETTERS

IF3.6

2011-05-02

OAAI

Murin, L. I.; Tolkacheva, E. A.; Markevich, V. P.; Peaker, A. R.; Hamilton, B.; Monakhov, E.; Svensson, B. G.; Lindstrom, J. L.; Santos, P.; Coutinho, J.; Carvalho, A.

Vacancy defect and defect cluster energetics in ion-implanted ZnO

PHYSICAL REVIEW B

IF3.7

2010-02-01

133

OAAI

Dong, Yufeng; Tuomisto, F.; Svensson, B. G.; Kuznetsov, A. Yu.; Brillson, Leonard J.

Trivacancy and trivacancy-oxygen complexes in silicon: Experiments and ab initio modeling

PHYSICAL REVIEW B

IF3.7

2009-12-30

OAAI

Markevich, V. P.; Peaker, A. R.; Lastovskii, S. B.; Murin, L. I.; Coutinho, J.; Torres, V. J. B.; Briddon, P. R.; Dobaczewski, L.; Monakhov, E. V.; Svensson, B. G.

Formation and annealing behavior of prominent point defects in MeV ion implanted n-type epitaxial Si

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS

IF4.6

2009-03-01

PREAI

Vines, L.; Monakhov, E. V.; Jensen, J.; Kuznetsov, A. Yu.; Svensson, B. G.

Electronic properties of the interface between Si and sputter deposited indium-tin oxide

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS

IF4.6

2009-03-01

PREAI

Monakhov, E. V.; Balasundaraprabhu, R.; Muthukumarasamy, N.; Svensson, B. G.