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Anders Hallén

KTH Royal Institute of Technology

44H指数
384论文数
6.5K被引数
收录论文 64
发表时间
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SPICE Model for SiC Bipolar Transistor and TTL Inverter Degradation Due to Gamma RadiationSiC双极晶体管及TTL反相器因伽马辐射导致的SPICE模型退化
errMicromachines 2025, Vol. 16, Page 1246
IF3
err2025-10-31
err0
errOAAI
errAlex Metreveli; Anders Hallén; Carl-Mikael Zetterling
err分享
err收藏
On the Design of Junction Termination for 4H-SiC High-Voltage Devices4H-SiC高压器件的结终端设计
errIEEE Access
IF3.6
err2025-01-01
err0
errOAAI
errZimo Yuan; Anders Hallén; Mietek Bakowski
err分享
err收藏
Er:LiNbO3 Quantum Memory Platform Optimized with Dynamic Defect AnnealingEr: 采用动态缺陷退火优化的LiNbO3量子存储平台
errADVANCED OPTICAL MATERIALS
IF7.2
err2024-08-28
err0
errOAAI
errSlusar, Tetiana; Azarov, Alexander; Galeckas, Augustinas; Hallen, Anders; Ju, Jung Jin; Moon, Kiwon; Kuznetsov, Andrej
err分享
err收藏
Monolithic Fabrication of Metal-Free On-Paper Self-Charging Power Systems
errADVANCED FUNCTIONAL MATERIALS
IF19
err2024-02-19
err2
errOAAI
errSu, Yingchun; Xue, Han; Fu, Yujie; Chen, Shiqian; Li, Zheng; Li, Lengwan; Knoks, Ainars; Bogdanova, Olga; Lesnicenoks, Peteris; Palmbahs, Roberts; Laurila, Mika-Matti; Maentysalo, Matti; Hammar, Mattias; Hallen, Anders; Nordell, Nils; Li, Jiantong
err分享
err收藏
Carrier Lifetime Dependence on Temperature and Proton Irradiation in 4H-SiC Device: An Experimental Law
errIEEE ACCESS
IF3.6
err2024-01-01
err0
errOAAI
errSozzi, Giovanna; Sapienza, Sergio; Chiorboli, Giovanni; Vines, Lasse; Hallen, Anders; Nipoti, Roberta
err分享
err收藏
High hole mobility and non-localized states in amorphous germanium
errAPL MATERIALS
IF4.5
err2023-04-10
err2
errOAAI
errTran, Tuan T.; Wong-Leung, Jennifer; Smillie, Lachlan A.; Hallen, Anders; Grimaldi, Maria G.; Williams, Jim S.
err分享
err收藏
Deposition of Ga2O3 thin films by liquid metal target sputtering
errVACUUM
IF3.9
err2023-03-01
err7
errOAAI
errZubkins, Martins; Vibornijs, Viktors; Strods, Edvards; Butanovs, Edgars; Bikse, Liga; Ottosson, Mikael; Hallen, Anders; Gabrusenoks, Jevgenijs; Purans, Juris; Azens, Andris
err分享
err收藏
Carbon vacancy control in p+-n silicon carbide diodes for high voltage bipolar applications
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2021-08-24
err4
errOAAI
errAyedh, H. M.; Kvamsdal, K-E; Bobal, V; Hallen, A.; Ling, F. C. C.; Kuznetsov, A. Yu
err分享
err收藏
Static and Dynamic Performance Prediction of Ultrahigh-Voltage Silicon Carbide Insulated-Gate Bipolar Transistors超高压碳化硅绝缘栅双极晶体管的静态和动态性能预测
errIEEE TRANSACTIONS ON POWER ELECTRONICS
IF6.5
err2021-05-01
err18
PREAI
errJohannesson, Daniel; Nawaz, Muhammad; Norrga, Staffan; Hallen, Anders; Nee, Hans-Peter
err分享
err收藏
Ge(Sn) growth on Si(001) by magnetron sputteringSi(001) 上磁控溅射生长Ge(Sn)
errMATERIALS TODAY COMMUNICATIONS
IF4.5
err2021-03-01
err16
errOAAI
errKhelidj, H.; Portavoce, A.; Bertoglio, M.; Descoins, M.; Patout, L.; Hoummada, K.; Hallen, A.; Charai, A.; Benoudia, M. C.; Mangelinck, D.
err分享
err收藏
Comparative study of proton and helium elastic scatterings from nitrogen in GaN
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2021-01-01
err1
PREAI
errUsman, Muhammad; Abbas, Turab Ali; Awais, Ali; Hallen, Anders
err分享
err收藏
Modelling the static on-state current voltage characteristics for a 10 kV 4H-SiC PiN diode
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2020-08-01
err2
PREAI
errTia, Kai; Xia, Jinghua; Elgammal, Karim; Schoner, Adolf; Kaplan, Wlodek; Karhu, Robin; Ul-Hassan, Jawad; Hallen, Anders
err分享
err收藏
Interaction of low-energy muons with defect profiles in proton-irradiated Si and 4H-SiC
errPHYSICAL REVIEW B
IF3.7
err2019-09-17
err13
errOAAI
errWoerle, Judith; Prokscha, Thomas; Hallen, Anders; Grossner, Ulrike
err分享
err收藏
Luminescence of silicon nanoparticles from oxygen implanted silicon
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2018-11-01
err2
PREAI
errChulapakorn, T.; Sychugov, I.; Ottosson, M.; Primetzhofer, D.; Moro, M. V.; Linnros, J.; Hallen, A.
err分享
err收藏
Extreme radiation hard thin film CZTSSe solar cell
errSOLAR ENERGY MATERIALS AND SOLAR CELLS
IF6.3
err2018-10-01
err14
PREAI
errSuvanam, Sethu Saveda; Larsen, Jes; Ross, Nils; Kosyak, Volodymyr; Hallen, Anders; Bjorkman, Charlotte Platzer
err分享
err收藏
Improving the quality of Al2O3/4H-SiC interface for device applications提高器件应用Al2O3/4H-SiC界面的质量
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2018-07-01
err13
PREAI
errUsman, Muhammad; Suvanam, Sethu Saveda; Linnarsson, M. K.; Hallen, Anders
err分享
err收藏
Improved interface and electrical properties of atomic layer deposited Al2O3/4H-SiC
errAPPLIED SURFACE SCIENCE
IF6.9
err2018-03-01
err16
PREAI
errSuvanam, Sethu Saveda; Usman, Muhammed; Martin, David; Yazdi, Milad G.; Linnarsson, Margareta; Tempez, Agnes; Gotelid, Mats; Hallen, Anders
err分享
err收藏
Influence of annealing environment on the ALD-Al2O3/4H-SiC interface studied through XPS
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2018-02-19
err27
PREAI
errUsman, Muhammad; Arshad, Muhammad; Suvanam, Sethu Saveda; Hallen, Anders
err分享
err收藏
Interface between Al2O3 and 4H-SiC investigated by time-of-flight medium energy ion scattering通过飞行时间介质能量离子散射研究Al2O3和4H-SiC之间的界面
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2017-11-17
err6
PREAI
errLinnarsson, M. K.; Hallen, A.; Khartsev, S.; Suvanam, S. S.; Usman, M.
err分享
err收藏
Extended defects in ZnO: Efficient sinks for point defects
errAPPLIED PHYSICS LETTERS
IF3.6
err2017-01-10
err23
PREAI
errAzarov, Alexander; Rauwel, Protima; Hallen, Anders; Monakhov, Edouard; Svensson, Bengt G.
err分享
err收藏

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