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P
P. Ranson
universite de orleans
29
H指数
186
论文数
2.2K
被引数
0
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11
发表时间
发表时间
IF
被引数
Parametric study of STiGer etching process in order to reduce extended formation of scalloping defects on the sidewalls of silicon submicron trenches
VACUUM
IF
3.9
2016-11-01
2
PRE
AI
Kafrouni, W.; Tillocher, T.; Ladroue, J.; Lefaucheux, P.; Boufnichel, M.; Ranson, P.; Dussart, R.
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Neutral species in inductively coupled SF6/SiCl4 plasmas
JOURNAL OF PHYSICS D-APPLIED PHYSICS
IF
3.2
2009-05-15
6
PRE
AI
Duluard, C. Y.; Ranson, P.; Pichon, L. E.; Oubensaid, E. H.; Pereira, J.; Lefaucheux, P.; Puech, M.; Dussart, R.
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In situ x-ray photoelectron spectroscopy analysis of SiOxFy passivation layer obtained in a SF6/O2 cryoetching process
APPLIED PHYSICS LETTERS
IF
3.6
2009-02-18
87
PRE
AI
Pereira, J.; Pichon, L. E.; Dussart, R.; Cardinaud, C.; Duluard, C. Y.; Oubensaid, E. H.; Lefaucheux, P.; Boufnichel, M.; Ranson, P.
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SO2 passivating chemistry for silicon cryogenic deep etching
PLASMA SOURCES SCIENCE & TECHNOLOGY
IF
3.3
2008-08-26
13
PRE
AI
Duluard, C. Y.; Dussart, R.; Tillocher, T.; Pichon, L. E.; Lefaucheux, P.; Puech, M.; Ranson, P.
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Properties of deep etched trenches in silicon: Role of the angular dependence of the sputtering yield and the etched species redeposition
硅中深蚀刻沟槽的特性: 溅射产率和蚀刻物种再沉积的角度依赖性的作用
APPLIED SURFACE SCIENCE
IF
6.9
2008-03-01
10
PRE
AI
Marcos, G.; Rhallabi, A.; Ranson, P.
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Two cryogenic processes involving SF6, O2, and SiF4 for silicon deep etching
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF
3.3
2008-01-01
31
PRE
AI
Tillocher, T.; Dussart, R.; Overzet, L. J.; Mellhaoui, X.; Lefaucheux, P.; Boufnichel, M.; Ranson, P.
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Silicon columnar microstructures induced by an SF6/O2 plasma
JOURNAL OF PHYSICS D-APPLIED PHYSICS
IF
3.2
2005-09-02
79
PRE
AI
Dussart, R; Mellhaoui, X; Tillocher, T; Lefaucheux, P; Volatier, M; Socquet-Clerc, C; Brault, P; Ranson, P
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A combined X-ray diffraction and Raman scattering study of the phase transitions in Sr1-xCaxTiO3 (x=0.04, 0.06, and 0.12)
JOURNAL OF SOLID STATE CHEMISTRY
IF
3.5
2005-09-01
27
PRE
AI
Mishra, SK; Ranjan, R; Pandey, D; Ranson, P; Ouillon, R; Pinan-Lucarre, JP; Pruzan, P
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Low-temperature Raman spectra of nitromethane single crystals.: Lattice dynamics and Davydov splittings
JOURNAL OF CHEMICAL PHYSICS
IF
3.1
2002-03-15
18
PRE
AI
Ouillon, R; Pinan-Lucarré, JP; Ranson, P; Baranovic, G
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A Raman scattering study of the antiferroelectric phase transition in (Sr0.70Ca0.30)TiO3 -: art. no. 092302
PHYSICAL REVIEW B
IF
3.7
2001-08-10
21
PRE
AI
Mishra, SK; Ranjan, R; Pandey, D; Ouillon, R; Pinan-Lucarre, JP; Ranson, P; Pruzan, P
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High resolution Raman study of phonon and vibron bandwidths in isotopically pure and natural benzene crystal
JOURNAL OF CHEMICAL PHYSICS
IF
3.1
1998-10-01
18
PRE
AI
Pinan, JP; Ouillon, R; Ranson, P; Becucci, M; Califano, S
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研究方向
暂时未获取到该数据
合作学者
合作期刊
R
Rajeev Ranjan
H 指数: 45 · 论文数: 375
D
Dhananjai Pandey
H 指数: 43 · 论文数: 260
M
M. Puech
H 指数: 38 · 论文数: 292
P
Pascal Brault
H 指数: 37 · 论文数: 485
S
S. Califano
H 指数: 34 · 论文数: 178
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