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P. Ranson

universite de orleans

29H指数
186论文数
2.2K被引数
收录论文 11
发表时间
Parametric study of STiGer etching process in order to reduce extended formation of scalloping defects on the sidewalls of silicon submicron trenches
errVACUUM
IF3.9
err2016-11-01
err2
PREAI
errKafrouni, W.; Tillocher, T.; Ladroue, J.; Lefaucheux, P.; Boufnichel, M.; Ranson, P.; Dussart, R.
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Neutral species in inductively coupled SF6/SiCl4 plasmas
err2009-05-15
err6
PREAI
errDuluard, C. Y.; Ranson, P.; Pichon, L. E.; Oubensaid, E. H.; Pereira, J.; Lefaucheux, P.; Puech, M.; Dussart, R.
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In situ x-ray photoelectron spectroscopy analysis of SiOxFy passivation layer obtained in a SF6/O2 cryoetching process
err2009-02-18
err87
PREAI
errPereira, J.; Pichon, L. E.; Dussart, R.; Cardinaud, C.; Duluard, C. Y.; Oubensaid, E. H.; Lefaucheux, P.; Boufnichel, M.; Ranson, P.
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SO2 passivating chemistry for silicon cryogenic deep etching
err2008-08-26
err13
PREAI
errDuluard, C. Y.; Dussart, R.; Tillocher, T.; Pichon, L. E.; Lefaucheux, P.; Puech, M.; Ranson, P.
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Two cryogenic processes involving SF6, O2, and SiF4 for silicon deep etching
err2008-01-01
err31
PREAI
errTillocher, T.; Dussart, R.; Overzet, L. J.; Mellhaoui, X.; Lefaucheux, P.; Boufnichel, M.; Ranson, P.
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Silicon columnar microstructures induced by an SF6/O2 plasma
err2005-09-02
err79
PREAI
errDussart, R; Mellhaoui, X; Tillocher, T; Lefaucheux, P; Volatier, M; Socquet-Clerc, C; Brault, P; Ranson, P
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A combined X-ray diffraction and Raman scattering study of the phase transitions in Sr1-xCaxTiO3 (x=0.04, 0.06, and 0.12)
err2005-09-01
err27
PREAI
errMishra, SK; Ranjan, R; Pandey, D; Ranson, P; Ouillon, R; Pinan-Lucarre, JP; Pruzan, P
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A Raman scattering study of the antiferroelectric phase transition in (Sr0.70Ca0.30)TiO3 -: art. no. 092302
err2001-08-10
err21
PREAI
errMishra, SK; Ranjan, R; Pandey, D; Ouillon, R; Pinan-Lucarre, JP; Ranson, P; Pruzan, P
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