S. Yoshida - Publications, H-index & Citations

S. Yoshida

机构信息待补充

38H指数

174论文数

5.9K被引数

收录论文 9

发表时间

Composition analysis of SiO2/SiC interfaces by electron spectroscopic measurements using slope-shaped oxide films

APPLIED SURFACE SCIENCE

IF6.9

2001-12-01

129

PREAI

Hijikata, Y; Yaguchi, H; Yoshikawa, M; Yoshida, S

Hydrogen-induced 3 x 1 phase of the Si-rich 3C-SiC(001) surface

PHYSICAL REVIEW B

IF3.7

2000-01-15

OAAI

Yeom, HW; Matsuda, I; Chao, YC; Hara, S; Yoshida, S; Uhrberg, RIG

Surface states of the 3C-SiC(001)-c(4 x 2) surface studied using angle-resolved photoemission

PHYSICAL REVIEW B

IF3.7

2000-01-15

PREAI

Duda, L; Johansson, LSO; Reihl, B; Yeom, HW; Hara, S; Yoshida, S

Raman studies on phonon modes in cubic AlGaN alloy

APPLIED PHYSICS LETTERS

IF3.6

1999-01-11

PREAI

Harima, H; Inoue, T; Nakashima, S; Okumura, H; Ishida, Y; Yoshida, S; Koizumi, T; Grille, H; Bechstedt, F

Electronic structure of the Si-rich 3C-SiC(001)3x2 surface

PHYSICAL REVIEW B

IF3.7

1998-10-15

PREAI

Yeom, HW; Chao, YC; Matsuda, I; Hara, S; Yoshida, S; Uhrberg, RIG

The origin of persistent photoconductivity and its relationship with yellow luminescence in molecular beam epitaxy grown undoped GaN

APPLIED PHYSICS LETTERS

IF3.6

1998-07-13

122

PREAI

Reddy, CV; Balakrishnan, K; Okumura, H; Yoshida, S

Arsenic surfactant effects and arsenic mediated molecular beam epitaxial growth dot cubic GaN

APPLIED PHYSICS LETTERS

IF3.6

1998-06-08

PREAI

Okumura, H; Hamaguchi, H; Feuillet, G; Ishida, Y; Yoshida, S

Arsenic mediated reconstructions on cubic (001) GaN

APPLIED PHYSICS LETTERS

IF3.6

1997-02-24

PREAI

Feuillet, G; Hamaguchi, H; Ohta, K; Hacke, P; Okumura, H; Yoshida, S

Monitoring surface stoichiometry with the (2x2) reconstruction during growth of hexagonal-phase GaN by molecular beam epitaxy

APPLIED PHYSICS LETTERS

IF3.6

1996-10-21

114

PREAI

Hacke, P; Feuillet, G; Okumura, H; Yoshida, S

研究方向