J.D. Plummer - Publications, H-index & Citations

J.D. Plummer

dstl

55H指数

366论文数

1.3W被引数

收录论文 23

发表时间

Effect of Cr content on the mechanical behaviour of a high entropy alloy Cr含量对高熵合金力学行为的影响

Journal of Materials Research and Technology

IF6.6

2025-11-11

OAAI

R.J. Lancaster; D. Paolucci; C.E. Bevan; T. Abdullah; M. Ritchie; A. Olds; L. Wilkin; S. Mehraban; N.P. Lavery; N. Middleton; J. Plummer

A Density Metric for Semiconductor Technology

PROCEEDINGS OF THE IEEE

IF25.9

2020-04-01

PREAI

Wong, H. -S. Philip; Akarvardar, Kerem; Antoniadis, Dimitri; Bokor, Jeffrey; Hu, Chenming; King-Liu, Tsu-Jae; Mitra, Subhasish; Plummer, James D.; Salahuddin, Sayeef

Active Power Device Selection in High- and Very-High-Frequency Power Converters 高频和甚高频功率转换器中的有源功率器件选择

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2019-07-01

OAAI

Zulauf, Grayson; Tong, Zikang; Plummer, James D.; Rivas-Davila, Juan Manuel

Single-crystal metal growth on amorphous insulating substrates

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

IF9.1

2018-01-08

OAAI

Zhang, Kai; Pitner, Xue Bai; Yang, Rui; Nix, William D.; Plummer, James D.; Fan, Jonathan A.

Si incorporation from the seed into Ge stripes crystallized using rapid melt growth

APPLIED PHYSICS LETTERS

IF3.6

2014-02-06

PREAI

Bai, Xue; Chen, Chien-Yu; Griffin, Peter B.; Plummer, James D.

Rapid melt growth of germanium crystals with self-aligned microcrucibles on Si substrates

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2005-01-01

100

PREAI

Liu, YC; Deal, MD; Plummer, JD

High-quality single-crystal Ge on insulator by liquid-phase epitaxy on Si substrates

APPLIED PHYSICS LETTERS

IF3.6

2004-04-05

281

PREAI

Liu, YC; Deal, MD; Plummer, JD

Atomistic modeling of deactivation and reactivation mechanisms in high-concentration boron profiles

APPLIED PHYSICS LETTERS

IF3.6

2003-11-17

PREAI

Aboy, M; Pelaz, L; Marqués, LA; Barbolla, J; Mokhberi, A; Takamura, Y; Griffin, PB; Plummer, JD

Activation and diffusion studies of ion-implanted p and n dopants in germanium

APPLIED PHYSICS LETTERS

IF3.6

2003-10-20

281

PREAI

Chui, CO; Gopalakrishnan, K; Griffin, PB; Plummer, JD; Saraswat, KC

Single-crystalline Si on insulator in confined structures fabricated by two-step metal-induced crystallization of amorphous Si

APPLIED PHYSICS LETTERS

IF3.6

2002-12-09

PREAI

Liu, YC; Deal, MD; Saraswat, KC; Plummer, JD

Fluorine interaction with point defects, boron, and arsenic in ion-implanted Si

APPLIED PHYSICS LETTERS

IF3.6

2002-05-13

PREAI

Mokhberi, A; Kasnavi, R; Griffin, PB; Plummer, JD

Atomic-scale diffusion mechanisms via intermediate species

PHYSICAL REVIEW B

IF3.7

2002-03-19

PREAI

Ural, A; Griffin, PB; Plummer, JD

Silicon orientation effects in the initial regime of wet oxidation

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2002-01-01

OAAI

Ngau, JL; Griffin, PB; Plummer, JD

Silicon self-diffusion under extrinsic conditions

APPLIED PHYSICS LETTERS

IF3.6

2001-12-24

PREAI

Ural, A; Griffin, PB; Plummer, JD

Material and process limits in silicon VLSI technology

PROCEEDINGS OF THE IEEE

IF25.9

2001-03-01

151

PREAI

Plummer, JD; Griffin, PB

Transparent probe test structure for electrical and physical characterization of defects in thin films

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2000-01-01

PREAI

Tringe, JW; Deal, MD; Plummer, JD

Experimental evidence for a dual vacancy interstitial mechanism of self-diffusion in silicon

APPLIED PHYSICS LETTERS

IF3.6

1998-09-21

PREAI

Ural, A; Griffin, PB; Plummer, JD

The dose, energy, and time dependence of silicon self-implantation induced transient enhanced diffusion at 750 degrees C

APPLIED PHYSICS LETTERS

IF3.6

1996-09-30

PREAI

Chao, HS; Griffin, PB; Plummer, JD; Rafferty, CS

Comparison of self-consistency iteration options for the Wigner function method of quantum device simulation

PHYSICAL REVIEW B

IF3.7

1996-09-15

PREAI

Biegel, BA; Plummer, JD

Influence of dislocation loops created by amorphizing implants on point defect and boron diffusion in silicon

APPLIED PHYSICS LETTERS

IF3.6

1996-06-17

PREAI

Chao, HS; Griffin, PB; Plummer, JD

研究方向