H.-S. Philip Wong

Stanford University

H指数:106

被引数:5.2万

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Passivation Unlocks Enhanced Stability in BEOL-Compatible High-Voltage In₂O₃ Transistors for On-Chip Power Conversion

钝化技术解锁了与后端工艺兼容的高电压In<sub>2</sub>O<sub>3</sub>晶体管在片上电源转换中的增强稳定性

IEEE Electron Device Letters

IF4.5

2026-08-120

Cross-Domain Acceleration of Open Modification Search: From Commodity Platforms to Emerging Memory and Storage Devices

跨域加速开放修饰搜索：从商用平台到新兴内存和存储设备

IEEE Journal on Emerging and Selected Topics in Circuits and Systems

IF3.8

2026-06-080

PRE

Quantum-Well Oxide Semiconductor Transistors Overcome Mobility–V_T Trade-Off

量子阱氧化物半导体晶体管克服迁移率–阈值电压权衡

IEEE Transactions on Electron Devices

IF3.2

2026-04-030

PRE

Ultrafast Generative AI by Ultradense 3D Integration: A Case Study on LLM-based Edge Inference

超高速生成式AI通过超密集3D集成：基于大语言模型的边缘推理案例研究

ACM Transactions on Design Automation of Electronic Systems

IF2

2026-01-010

PRE

High-Field Breakdown and Thermal Characterization of Indium Tin Oxide Transistors

高场击穿与热特性表征的氧化铟锡晶体管

ACS NANO

IF16

2025-04-220

PRE

Dimensional Scaling of Ferroelectric Properties of Hafnia-Zirconia Thin Films: Electrode Interface Effects

氧化铪-氧化锆薄膜的铁电性能的尺寸缩放: 电极界面效应

ACS NANO

IF16

2024-06-251

PRE

Novel nanocomposite-superlattices for low energy and high stability nanoscale phase-change memory

用于低能和高稳定性纳米级相变存储器的新型纳米复合超晶格

NATURE COMMUNICATIONS

IF15.7

2024-01-2213

OAAI

Small Molecule Additives to Suppress Bundling in Dimensional-Limited Self-Alignment Method for High-Density Aligned Carbon Nanotube Array

ADVANCED MATERIALS INTERFACES

IF4.4

2023-12-175

OAAI

A disposable reader-sensor solution for wireless temperature logging

DEVICE

IF8

2023-12-011

OAAI

Band-to-Band Tunneling Leakage Current Characterization and Projection in Carbon Nanotube Transistors

ACS NANO

IF16

2023-11-014

PRE

Complementary carbon nanotube metal-oxide-semiconductor field-effect transistors with localized solid-state extension doping

NATURE ELECTRONICS

IF40.9

2023-10-1913

PRE

Area-Selective Atomic Layer Deposition for Resistive Random-Access Memory Devices

用于电阻式随机存取存储器器件的区域选择性原子层沉积

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2023-09-013

PRE

Micro/Nano Circuits and Systems Design and Design Automation: Challenges and Opportunities

PROCEEDINGS OF THE IEEE

IF25.9

2023-06-011

PRE

Probing the Melting Transitions in Phase-Change Superlattices via Thin Film Nanocalorimetry

通过薄膜纳米荧光法探测相变超晶格中的熔化转变

NANO LETTERS

IF9.1

2023-05-123

PRE

High-density analog image storage in an analog-valued non-volatile memory array

NEUROMORPHIC COMPUTING AND ENGINEERING

IF6.1

2022-12-164

Improved gradual resistive switching range and 1000x on/off ratio in HfOx PRAM achieved with a Ge2Sb2Te5 thermal barrier

APPLIED PHYSICS LETTERS

IF3.6

2022-08-235

PRE

Unveiling the Effect of Superlattice Interfaces and Intermixing on Phase Change Memory Performance

揭示超晶格界面和混合对相变存储器性能的影响

NANO LETTERS

IF9.1

2022-07-2526

PRE

Illusion of large on-chip memory by networked computing chips for neural network inference

NATURE ELECTRONICS

IF40.9

2021-01-1114

PREAI

Analog Coding in Emerging Memory Systems (vol 17, 819, 2020)

SCIENTIFIC REPORTS

IF3.9

2020-08-042

OAAI

Scanning the Issue

PROCEEDINGS OF THE IEEE

IF25.9

2020-04-010

PREAI

H.-S. Philip Wong

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