D. C. Jacobson - Publications, H-index & Citations

D. C. Jacobson

机构信息待补充

51H指数

307论文数

1.2W被引数

收录论文 26

发表时间

Behavior of molybdenum in silicon evaluated for integrated circuit processing

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2019-12-06

PREAI

Benton, JL; Jacobson, DC; Jackson, B; Johnson, JA; Boone, T; Eaglesham, DJ; Stevie, FA; Becerro, J

The mechanisms of iron gettering in silicon by boron ion-implantation

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2019-12-06

OAAI

Benton, JL; Stolk, PA; Eaglesham, DJ; Jacobson, DC; Cheng, JY; Poate, JM; Myers, SM; Haynes, TE

Ridged LiNbO3 modulators fabricated by a novel oxygen-ion implant/wet-etch technique

JOURNAL OF LIGHTWAVE TECHNOLOGY

IF4.8

2004-03-01

PREAI

Gill, DM; Jacobson, D; White, CA; Jones, CDW; Shi, Y; Minford, WJ; Harris, A

Sputtering of Si with decaborane cluster ions

APPLIED PHYSICS LETTERS

IF3.6

2002-01-28

PREAI

Sosnowski, M; Albano, MA; Li, C; Gossmann, HJL; Jacobson, DC

Transient enhanced diffusion of B in Si implanted with decaborane cluster ions

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2002-01-01

PREAI

Sosnowski, M; Albano, MA; Li, C; Gossmann, HJL; Jacobson, DC

Silicon carbide and silicon carbide:germanium heterostructure bipolar transistors

APPLIED PHYSICS LETTERS

IF3.6

2001-04-02

PREAI

Roe, KJ; Katulka, G; Kolodzey, J; Saddow, SE; Jacobson, D

Electrical properties of cobalt and copper contamination in processed silicon

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2001-01-01

PREAI

Benton, JL; Boone, T; Jacobson, DC; Silverman, PJ; Rosamilia, JM; Rafferty, CS; Weinzierl, S; Vu, B

Gettering of Co in Si by high-energy B ion-implantation and by p/p+ epitaxial Si

APPLIED PHYSICS LETTERS

IF3.6

2000-12-11

PREAI

Benton, JL; Boone, T; Jacobson, DC; Rafferty, CS

Linear and nonlinear optical properties of erbium-implanted coherent array of submicron silica spheres

APPLIED PHYSICS LETTERS

IF3.6

2000-06-26

PREAI

Ajgaonkar, M; Zhang, Y; Grebel, H; Sosnowski, M; Jacobson, DC

Quantification of excess vacancy defects from high-energy ion implantation in Si by Au labeling

APPLIED PHYSICS LETTERS

IF3.6

2000-06-05

PREAI

Kalyanaraman, R; Haynes, TE; Venezia, VC; Jacobson, DC; Gossmann, HJ; Rafferty, CS

The role of oxygen on the stability of gettering of metals to cavities in silicon

APPLIED PHYSICS LETTERS

IF3.6

1999-10-18

PREAI

Williams, JS; Conway, MJ; Wong-Leung, J; Deenapanray, PNK; Petravic, M; Brown, RA; Eaglesham, DJ; Jacobson, DC

Boron pileup and clustering in silicon-on-insulator films

APPLIED PHYSICS LETTERS

IF3.6

1999-08-23

PREAI

Vuong, HH; Gossmann, HJ; Pelaz, L; Celler, GK; Jacobson, DC; Barr, D; Hergenrother, J; Monroe, D; Venezia, VC; Rafferty, CS; Hillenius, SJ; McKinley, J; Stevie, FA; Granger, C

Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon

APPLIED PHYSICS LETTERS

IF3.6

1999-03-01

PREAI

Venezia, VC; Haynes, TE; Agarwal, A; Pelaz, L; Gossmann, HJ; Jacobson, DC; Eaglesham, DJ

Depth profiling of vacancy clusters in MeV-implanted Si using Au labeling

APPLIED PHYSICS LETTERS

IF3.6

1998-11-16

PREAI

Venezia, VC; Eaglesham, DJ; Haynes, TE; Agarwal, A; Jacobson, DC; Gossmann, HJ; Baumann, FH

Transient enhanced diffusion from decaborane molecular ion implantation

APPLIED PHYSICS LETTERS

IF3.6

1998-10-05

PREAI

Agarwal, A; Gossmann, HJ; Jacobson, DC; Eaglesham, DJ; Sosnowski, M; Poate, JM; Yamada, I; Matsuo, J; Haynes, TE

Critical issues in ion implantation of silicon below 5 keV: Defects and diffusion

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING

IF7

1998-09-01

PREAI

Agarwal, A; Gossmann, HJ; Eaglesham, DJ; Pelaz, L; Jacobson, DC; Poate, JM; Haynes, TE

Capture of vacancies by extrinsic dislocation loops in silicon

APPLIED PHYSICS LETTERS

IF3.6

1998-01-05

PREAI

Herner, SB; Gossmann, HJ; Baumann, FH; Gilmer, GH; Jacobson, DC; Jones, KS

The interstitial fraction of diffusivity of common dopants in Si

APPLIED PHYSICS LETTERS

IF3.6

1997-12-29

PREAI

Gossmann, HJ; Haynes, TE; Stolk, PA; Jacobson, DC; Gilmer, GH; Poate, JM; Luftman, HS; Mogi, TK; Thompson, MO

Reduction of transient diffusion from 1-5 keV Si+ ion implantation due to surface annihilation of interstitials

APPLIED PHYSICS LETTERS

IF3.6

1997-11-24

PREAI

Agarwal, A; Gossmann, HJ; Eaglesham, DJ; Pelaz, L; Jacobson, DC; Haynes, TE; Erokhin, YE

Evolution of interstitial- and vacancy-type defects upon thermal annealing in ion-implanted Si

APPLIED PHYSICS LETTERS

IF3.6

1997-07-21

PREAI

Libertino, S; Benton, JL; Jacobson, DC; Eaglesham, DJ; Poate, JM; Coffa, S; Kringhoj, P; Fuochi, PG; Lavalle, M

研究方向