Y. K. Yeo - Publications, H-index & Citations

Y. K. Yeo

hanyang university

19H指数

152论文数

1.2K被引数

收录论文 12

发表时间

Realizing Vertical Etch Profiles in Fluorine-Rich Ar/CF4 Plasma 在富氟Ar/CF4等离子体中实现垂直刻蚀形貌

Advanced Materials Interfaces

IF4.4

2025-12-08

OAAI

Junyoung Park; Nayeon Kim; Jung-Eun Choi; Yujin Yeo; Min-Seok Kim; Beom-Jun Seo; Chin-Wook Chung

Atomic Layer Etching of SiO2 Utilizing Ultra-Low Electron Temperature Plasma 利用超低电子温度等离子体对SiO2进行原子层刻蚀

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2025-05-05

PREAI

Park, J; Kim, N; Choi, JE; Yeo, Y; Kim, MS; Lim, CM; Seo, BJ; Chung, CW

Temperature-dependent photoluminescence of Ge/Si and Ge1-ySny/Si, indicating possible indirect-to-direct bandgap transition at lower Sn content

APPLIED PHYSICS LETTERS

IF3.6

2013-05-03

PREAI

Ryu, Mee-Yi; Harris, Tom R.; Yeo, Y. K.; Beeler, R. T.; Kouvetakis, J.

Degenerate parallel conducting layer and conductivity type conversion observed from p-Ge1-ySny (y=0.06%) grown on n-Si substrate

APPLIED PHYSICS LETTERS

IF3.6

2012-09-26

PREAI

Ryu, Mee-Yi; Yeo, Y. K.; Ahoujja, M.; Harris, Tom; Beeler, Richard; Kouvetakis, John

Room temperature ferromagnetic properties of transition metal implanted Al0.35Ga0.65N

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2006-10-01

PREAI

Raley, Jeremy A.; Yeo, Yung Kee; Hengehold, Robert L.; Ryu, Mee-Yi; Steiner, Todd D.

Ferromagnetism in Fe-implanted a-plane ZnO films

APPLIED PHYSICS LETTERS

IF3.6

2006-07-07

OAAI

Wu, P.; Saraf, G.; Lu, Y.; Hill, D. H.; Gateau, R.; Wielunski, L.; Bartynski, R. A.; Arena, D. A.; Dvorak, J.; Moodenbaugh, A.; Siegrist, T.; Raley, J. A.; Yeo, Yung Kee

Radiation-induced electron traps in Al0.14Ga0.86N by 1 MeV electron radiation -: art. no. 261906

APPLIED PHYSICS LETTERS

IF3.6

2005-06-21

PREAI

Hogsed, MR; Yeo, YK; Ahoujja, M; Ryu, MY; Petrosky, JC; Hengehold, RL

Ion-beam-induced sharpening of ZnO nanotips

APPLIED PHYSICS LETTERS

IF3.6

2004-08-16

OAAI

Wu, P; Saraf, G; Lu, YC; Hill, DH; Bartynski, RA; Arena, DA; Ryu, MY; Raley, JA; Yeo, YK

Control of surface states in GaSb/AlxGa1-xAsySb1-y/GaxIn1-xSb/AlxGa1-xAsySb1-y quantum well structures

APPLIED PHYSICS LETTERS

IF3.6

1999-11-01

PREAI

Johnstone, DK; Yeo, YK; Hengehold, RL; Turner, GW

Recombination dynamics in InAsSb quantum-well diode lasers measured using photoluminescence upconversion

APPLIED PHYSICS LETTERS

IF3.6

1998-11-16

PREAI

Cooley, WT; Hengehold, RL; Yeo, YK; Turner, GW; Loehr, JP

Deep level capture barrier in molecular beam epitaxial grown AlAsySb1-y measured by isothermal capacitance transient spectroscopy

APPLIED PHYSICS LETTERS

IF3.6

1997-07-28

PREAI

Johnstone, DK; Yeo, YK; Hengehold, RL; Turner, GW

Photoluminescence study of p-type CdGeAs2 ordered semiconductor crystals

APPLIED PHYSICS LETTERS

IF3.6

1997-01-27

PREAI

McCrae, JE; Hengehold, RL; Yeo, YK; Ohmer, MC; Schunemann, PG

研究方向