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N. Balkan

University of Essex

25H指数
251论文数
2.4K被引数
收录论文 30
发表时间
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Optical gain in 1.3-μm electrically driven dilute nitride VCSOAs
err2014-01-13
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errOAAI
errLisesivdin, Sefer Bora; Khan, Nadir Ali; Mazzucato, Simone; Balkan, Naci; Adams, Michael John; Korpijarvi, Ville-Markus; Guina, Mircea; Mezosi, Gabor; Sorel, Marc
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Dilute nitride and GaAs n-i-p-i solar cells稀氮化物和GaAs n-i-p-i太阳能电池
err2012-11-20
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errOAAI
errMazzucato, Simone; Royall, Benjamin; Ketlhwaafetse, Richard; Balkan, Naci; Salmi, Joel; Puustinen, Janne; Guina, Mircea; Smith, Andy; Gwilliam, Russell
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Acceptor formation in Mg-doped, indium-rich GaxIn1-xN: evidence for p-type conductivity
err2012-10-18
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errOAAI
errBalkan, Naci; Tiras, Engin; Erol, Ayse; Gunes, Mustafa; Ardali, Sukru; Arikan, MCetin; Lagarde, Dalphine; Carrere, Helene; Marie, Xavier; Gumus, Cebrail
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Top-Hat HELLISH-VCSOA for optical amplification and wavelength conversion for 0.85 to 1.3μm operation
err2012-09-25
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errOAAI
errChaqmaqchee, Faten Adel Ismael; Balkan, Naci; Ulloa Herrero, Jose Maria
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The role of dislocation-induced scattering in electronic transport in GaxIn1-xN alloys
err2012-08-31
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errOAAI
errDonmez, Omer; Gunes, Mustafa; Erol, Ayse; Arikan, Cetin M.; Balkan, Naci; Schaff, William J.
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Nonlinear dynamics of non-equilibrium holes in p-type modulation-doped GaInNAs/GaAs quantum wells
err2011-03-02
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errOAAI
errKhalil, Hagir Mohammed; Sun, Yun; Balkan, Naci; Amann, Andreas; Sopanen, Markku
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GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier for 1.3 μm operation
err2011-01-27
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errOAAI
errChaqmaqchee, Faten Adel Ismail; Mazzucato, Simone; Oduncuoglu, Murat; Balkan, Naci; Sun, Yun; Gunes, Mustafa; Hugues, Maxime; Hopkinson, Mark
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Superconductivity in heavily compensated Mg-doped InN
err2009-04-10
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errOAAI
errTiras, E.; Gunes, M.; Balkan, N.; Airey, R.; Schaff, W. J.
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Optical and electrical properties of modulation-doped n and p-type GaxIn1-xNyAs1-y/GaAs quantum wells for 1.3 μm laser applications
err2007-12-14
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PREAI
errSun, Y.; Erol, A.; Yilmaz, M.; Arikan, M. C.; Ulug, B.; Ulug, A.; Balkan, N.; Sopanen, M.; Reentilae, O.; Mattila, M.; Fontaine, C.; Arnoult, A.
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Inhibition of negative differential resistance in modulation-doped n-type GaxIn1-xNyAs1-y/GaAs quantum wells
err2007-05-11
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PREAI
errSun, Y.; Vaughan, M. P.; Agarwal, A.; Yilmaz, M.; Ulug, B.; Ulug, A.; Balkan, N.; Sopanen, M.; Reentila, O.; Mattila, M.; Fontaine, C.; Arnoult, A.
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In-plane photovoltage measurements on MBE grown InN
err2004-10-01
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PREAI
errTiras, E; Zanato, D; Mazzucato, S; Balkan, N; Schaff, WJ
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Momentum relaxation of electrons in n-type bulk GaN
err2003-07-01
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PREAI
errZanato, D; Gokden, S; Balkan, N; Ridley, BK; Schaff, WJ
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Effect of nitrogen fraction on the temperature dependence of GaNAs/GaAs quantum-well emission
err2003-05-19
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PREAI
errPotter, RJ; Balkan, N; Carrère, H; Arnoult, A; Bedel, E; Marie, X
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