P. Gibart - Publications, H-index & Citations

P. Gibart

national institute for materials science

46H指数

348论文数

8.4K被引数

收录论文 34

发表时间

Band-edge emission enhancement by longitudinal stress field in GaN

APPLIED PHYSICS LETTERS

IF3.6

2008-08-25

PREAI

Cai, Duanjun; Kang, Junyong; Gibart, Pierre; Beaumont, Bernard; Sekiguchi, Takachi; Ito, Shun

Optical monitoring of nonequilibrium carrier lifetime in freestanding GaN by time-resolved four-wave mixing and photoluminescence techniques

APPLIED PHYSICS LETTERS

IF3.6

2006-05-18

PREAI

Malinauskas, T.; Jarasiunas, K.; Miasojedovas, S.; Jursenas, S.; Beaumont, B.; Gibart, P.

High-spatial-resolution strain measurements by Auger electron spectroscopy in epitaxial-lateral-overgrowth GaN

APPLIED PHYSICS LETTERS

IF3.6

2005-05-20

PREAI

Cai, DJ; Xu, FC; Kang, JY; Gibart, P; Beaumont, B

Self-organized domain formation in low-dislocation-density GaN

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2004-10-01

PREAI

Riemann, T; Christen, J; Beaumont, B; Faurie, JP; Gibart, P

Nitride-based photodetectors:: from visible to X-ray monitoring

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2004-10-01

PREAI

Pau, JL; Rivera, C; Pereiro, J; Muñoz, E; Calleja, E; Schühle, U; Frayssinet, E; Beaumont, B; Faurie, JP; Gibart, P

Atomic structure of pyramidal defects in Mg-doped GaN -: art. no. 235214

PHYSICAL REVIEW B

IF3.7

2003-12-31

PREAI

Vennéguès, P; Leroux, M; Dalmasso, S; Benaissa, M; De Mierry, P; Lorenzini, P; Damilano, B; Beaumont, B; Massies, J; Gibart, P

Microstructure of GaN layers grown on Si(111) revealed by TEM

VACUUM

IF3.9

2003-05-01

PREAI

Dobos, L; Pécz, B; Feltin, E; Beaumont, B; Gibart, P

Coherent exciton-biexciton dynamics in GaN

PHYSICAL REVIEW B

IF3.7

2002-04-22

PREAI

Kyhm, K; Taylor, RA; Ryan, JF; Aoki, T; Kuwata-Gonokami, M; Beaumont, B; Gibart, P

Raman mapping, photoluminescence investigations, and finite element analysis of epitaxial lateral overgrown GaN on silicon substrates

APPLIED PHYSICS LETTERS

IF3.6

2002-04-01

PREAI

Benyoucef, M; Kuball, M; Beaumont, B; Gibart, P

The GaN yellow luminescence centre observed using optoelectronic modulation spectroscopy

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2002-03-20

PREAI

Chiu, CH; Omnes, F; Gaquiere, C; Gibart, P; Swanson, JG

In situ growth monitoring of distributed GaN-AlGaN Bragg reflectors by metalorganic vapor phase epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2002-01-14

OAAI

Schenk, HPD; de Mierry, P; Vennéguès, P; Tottereau, O; Laügt, M; Vaille, M; Feltin, E; Beaumont, B; Gibart, P; Fernández, S; Calle, F

Finite element analysis of epitaxial lateral overgrown GaN: Voids at the coalescence boundary

APPLIED PHYSICS LETTERS

IF3.6

2001-12-17

PREAI

Benyoucef, M; Kuball, M; Hill, G; Wisnom, M; Beaumont, B; Gibart, P

Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2001-11-12

291

OAAI

Feltin, E; Beaumont, B; Laügt, M; de Mierry, P; Vennéguès, P; Lahrèche, H; Leroux, M; Gibart, P

Quantum beats of free and bound excitons in GaN

APPLIED PHYSICS LETTERS

IF3.6

2001-08-20

PREAI

Kyhm, K; Taylor, RA; Ryan, JF; Aoki, T; Kuwata-Gonokami, M; Beaumont, B; Gibart, P

Free-carrier effects in gallium nitride epilayers: Valence-band dispersion

PHYSICAL REVIEW B

IF3.7

2001-08-08

OAAI

Shields, PA; Nicholas, RJ; Peeters, FM; Beaumont, B; Gibart, P

Characterization of electron-irradiated n-GaN

APPLIED PHYSICS LETTERS

IF3.6

2001-06-11

PREAI

Goodman, SA; Auret, FD; Legodi, MJ; Beaumont, B; Gibart, P

Electron energy-loss spectroscopy characterization of pyramidal defects in metalorganic vapor-phase epitaxy Mg-doped GaN thin films

APPLIED PHYSICS LETTERS

IF3.6

2000-10-02

PREAI

Benaissa, M; Vennéguès, P; Beaumont, B; Gibart, P; Saikaly, W; Charai, A

Pyramidal defects in metalorganic vapor phase epitaxial Mg doped GaN

APPLIED PHYSICS LETTERS

IF3.6

2000-08-07

123

PREAI

Vennéguès, P; Benaissa, M; Beaumont, B; Feltin, E; De Mierry, P; Dalmasso, S; Leroux, M; Gibart, P

Optically detected magnetic-resonance mapping on the yellow luminescence in GaN

APPLIED PHYSICS LETTERS

IF3.6

2000-04-03

PREAI

Koschnick, FK; Michael, K; Spaeth, JM; Beaumont, B; Gibart, P

AlGaN photodiodes for monitoring solar UV radiation

JOURNAL OF GEOPHYSICAL RESEARCH-ATMOSPHERES

IF3.4

2000-02-01

OAAI

Muñoz, E; Monroy, E; Calle, F; Omnès, F; Gibart, P

研究方向