M. Städele - Publications, H-index & Citations

M. Städele

机构信息待补充

23H指数

74论文数

2.4K被引数

收录论文 7

发表时间

Full-band Monte Carlo simulations of high-field electron transport in GaAs and ZnS -: art. no. 201201

PHYSICAL REVIEW B

IF3.7

2003-05-07

PREAI

Fitzer, N; Kuligk, A; Redmer, R; Städele, M; Goodnick, SM; Schattke, W

Electronic structure of ScN determined using optical spectroscopy, photoemission, and ab initio calculations -: art. no. 125119

PHYSICAL REVIEW B

IF3.7

2001-03-13

150

PREAI

Gall, D; Städele, M; Järrendahl, K; Petrov, I; Desjardins, P; Haasch, RT; Lee, TY; Greene, JE

Influence of defects on elastic gate tunneling currents through ultrathin SiO2 gate oxides:: predictions from microscopic models

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2000-11-01

PREAI

Städele, M; Fischer, B; Tuttle, BR; Hess, K

Exact-exchange-based quasiparticle calculations

PHYSICAL REVIEW B

IF3.7

2000-09-15

PREAI

Aulbur, WG; Städele, M; Görling, A

Tight-binding investigation of electron tunneling through ultrathin SiO2 gate oxides

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2000-05-01

PREAI

Städele, M; Tuttle, BR; Hess, K; Register, LF

Exact exchange Kohn-Sham formalism applied to semiconductors

PHYSICAL REVIEW B

IF3.7

1999-04-15

302

PREAI

Städele, M; Moukara, M; Majewski, JA; Vogl, P; Görling, A

Stability and band offsets of polar GaN/SiC(001) and AlN/SiC(001) interfaces

PHYSICAL REVIEW B

IF3.7

1997-09-15

PREAI

Stadele, M; Majewski, JA; Vogl, P

研究方向