P. B. Klein - Publications, H-index & Citations

P. B. Klein

United States Navy

30H指数

145论文数

3.3K被引数

收录论文 11

发表时间

Carrier lifetime variation in thick 4H-SiC epilayers using two-photon absorption

APPLIED PHYSICS LETTERS

IF3.6

2017-11-30

PREAI

Mahadik, Nadeemullah A.; Stahlbush, Robert E.; Klein, Paul B.; Khachatrian, Ani; Buchner, Stephen; Block, Steven G.

Photoinduced tunability of the reststrahlen band in 4H-SiC

PHYSICAL REVIEW B

IF3.7

2016-02-24

OAAI

Spann, Bryan T.; Compton, Ryan; Ratchford, Daniel; Long, James P.; Dunkelberger, Adam D.; Klein, Paul B.; Giles, Alexander J.; Caldwell, Joshua D.; Owrutsky, Jeffrey C.

Single n-GaN microwire/p-Silicon thin film heterojunction light-emitting diode

OPTICS EXPRESS

IF3.3

2011-10-19

OAAI

Ahn, Jaehui; Mastro, Michael A.; Klein, Paul B.; Hite, Jennifer K.; Feigelson, Boris; Eddy, Charles R., Jr.; Kim, Jihyun

Cathodoluminescence study of the properties of stacking faults in 4H-SiC homoepitaxial layers

APPLIED PHYSICS LETTERS

IF3.6

2009-03-03

PREAI

Maximenko, Serguei I.; Freitas, Jaime A., Jr.; Klein, Paul B.; Shrivastava, Amitesh; Sudarshan, Tangali S.

Observation of a multilayer planar in-grown stacking fault in 4H-SiC p-i-n diodes

APPLIED PHYSICS LETTERS

IF3.6

2006-09-07

PREAI

Caldwell, Joshua D.; Klein, P. B.; Twigg, Mark E.; Stahlbush, Robert E.; Glembocki, Orest J.; Liu, Kendrick X.; Hobart, Karl D.; Kub, Fritz

Lifetime-limiting defects in n- 4H-SiC epilayers -: art. no. 052110

APPLIED PHYSICS LETTERS

IF3.6

2006-02-01

207

PREAI

Klein, PB; Shanabrook, BV; Huh, SW; Polyakov, AY; Skowronski, M; Sumakeris, JJ; O'Loughlin, MJ

Current collapse induced in AlGaN/GaN high-electron-mobility transistors by bias stress

APPLIED PHYSICS LETTERS

IF3.6

2003-08-25

PREAI

Mittereder, JA; Binari, SC; Klein, PB; Roussos, JA; Katzer, DS; Storm, DF; Koleske, DD; Wickenden, AE; Henry, RL

Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2001-11-19

288

PREAI

Klein, PB; Binari, SC; Ikossi, K; Wickenden, AE; Koleske, DD; Henry, RL

Observation of deep traps responsible for current collapse in GaN metal-semiconductor field-effect transistors

APPLIED PHYSICS LETTERS

IF3.6

1999-12-20

175

PREAI

Klein, PB; Freitas, JA; Binari, SC; Wickenden, AE

Transmission electron microscopy and photoluminescence studies of Er implanted low-temperature grown GaAs:Be

APPLIED PHYSICS LETTERS

IF3.6

1998-10-12

PREAI

Maltez, RL; Liliental-Weber, Z; Washburn, J; Behar, M; Klein, PB; Specht, P; Weber, ER

Trap-mediated excitation of Er3+ photoluminescence in Er-implanted GaN

APPLIED PHYSICS LETTERS

IF3.6

1997-11-03

PREAI

Kim, S; Rhee, SJ; Turnbull, DA; Li, X; Coleman, JJ; Bishop, SG; Klein, PB

研究方向