Marek Skowroński - Publications, H-index & Citations

Marek Skowroński

Carnegie Mellon University

51H指数

356论文数

9.3K被引数

收录论文 46

发表时间

Parametric study of filament and gap models of resistive switching in TaOx-based devices.TaOx基器件中电阻开关的丝状和间隙模型的参数研究。

JOURNAL OF APPLIED PHYSICS

IF2.5

2025-03-19

PREAI

Li, Rongchen; Bai, Yang; Skowronski, Marek

Electrical conductivity of TaOx as function of composition and temperature TaOx的电导率随组成和温度的变化

JOURNAL OF NON-CRYSTALLINE SOLIDS

IF3.5

2023-10-01

OAAI

Bao, Kefei; Meng, Jingjia; Poplawsky, Jonathan D.; Skowronski, M.

Temperature Distribution in TaOx Resistive Switching Devices Assessed In Operando by Scanning Thermal Microscopy

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2023-04-10

OAAI

Meng, Jingjia; Goodwill, Jonathan M.; Strelcov, Evgheni; Bao, Kefei; McClelland, Jabez J.; Skowronski, Marek

Observation and modelling of homogenous nucleation in Ge2Sb2Te5 mushroom cells during SET operation

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2023-01-01

PREAI

Yu, Yiqi; Skowronski, Marek

Modeling of the Thermodiffusion-Induced Filament Formation in TiN/TaxO1-x/TiN Resistive-Switching Devices

PHYSICAL REVIEW APPLIED

IF4.4

2022-05-24

PREAI

Meng, Jingjia; Lian, Enkui; Poplawsky, Jonathan D.; Skowronski, Marek

Exchange of Ions across the TiN/TaOx Interface during Electroformation of TaOx-Based Resistive Switching Devices

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2020-05-22

OAAI

Ma, Yuanzhi; Cullen, David A.; Goodwill, Jonathan M.; Xu, Qiyun; More, Karren L.; Skowronski, Marek

Electrical and Thermal Dynamics of Self-Oscillations in TaOx-Based Threshold Switching Devices

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2020-02-03

PREAI

Yu, Yiqi; Zhao, Bingyuan; Goodwill, Jonathan M.; Ma, Yuanzhi; Bain, James A.; Skowronski, Marek

Dislocation density reduction in GaSb films grown on GaAs substrates by molecular beam epitaxy

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2019-12-06

PREAI

Qian, W; Skowronski, M; Kaspi, R

Thermal-gradient-driven elemental segregation in Ge2Sb2Te5 phase change memory cells

APPLIED PHYSICS LETTERS

IF3.6

2019-04-26

PREAI

Yeoh, Phoebe; Ma, Yuanzhi; Cullen, David A.; Bain, James A.; Skowronski, Marek

Spontaneous current constriction in threshold switching devices

NATURE COMMUNICATIONS

IF15.7

2019-04-09

OAAI

Goodwill, Jonathan M.; Ramer, Georg; Li, Dasheng; Hoskins, Brian D.; Pavlidis, Georges; McClelland, Jabez J.; Centrone, Andrea; Bain, James A.; Skowronski, Marek

Formation of the Conducting Filament in TaOx-Resistive Switching Devices by Thermal-Gradient-Induced Cation Accumulation

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2018-06-18

OAAI

Ma, Yuanzhi; Li, Dasheng; Herzing, Andrew A.; Cullen, David A.; Sneed, Brian T.; More, Karren L.; Nuhfer, N. T.; Bain, James A.; Skowronski, Marek

Electro-Thermal Model of Threshold Switching in TaOx-Based Devices TaOx基器件中阈值开关的电热模型

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2017-03-21

PREAI

Goodwill, Jonathan M.; Sharma, Abhishek A.; Li, Dasheng; Bain, James A.; Skowronski, Marek

Scaling behavior of oxide-based electrothermal threshold switching devices

NANOSCALE

IF5.1

2017-01-01

PREAI

Li, Dasheng; Goodwill, Jonathan M.; Bain, James A.; Skowronski, Marek

Transient Thermometry and High-Resolution Transmission Electron Microscopy Analysis of Filamentary Resistive Switches

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2016-07-26

PREAI

Kwon, Jonghan; Sharma, Abhishek A.; Chen, Chao-Yang; Fantini, Andrea; Jurczak, Malgorzata; Herzing, Andrew A.; Bain, James A.; Picard, Yoosuf N.; Skowronski, Marek

Joule Heating-Induced Metal-Insulator Transition in Epitaxial VO2/TiO2 Devices

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2016-05-10

114

PREAI

Li, Dasheng; Sharma, Abhishek A.; Gala, Darshil K.; Shukla, Nikhil; Paik, Hanjong; Datta, Suman; Schlom, Darrell G.; Bain, James A.; Skowronski, Marek

Low temperature electroformation of TaOx-based resistive switching devices

APL MATERIALS

IF4.5

2016-01-04

OAAI

Gala, Darshil K.; Sharma, Abhishek A.; Li, Dasheng; Goodwill, Jonathan M.; Bain, James A.; Skowronski, Marek

Oxygen vacancies on SrO-terminated SrTiO3(001) surfaces studied by scanning tunneling spectroscopy

PHYSICAL REVIEW B

IF3.7

2015-05-11

OAAI

Sitaputra, Wattaka; Sivadas, Nikhil; Skowronski, Marek; Xiao, Di; Feenstra, Randall M.

Oxygen Vacancy Creation, Drift, and Aggregation in TiO2-Based Resistive Switches at Low Temperature and Voltage

ADVANCED FUNCTIONAL MATERIALS

IF19

2015-03-30

PREAI

Kwon, Jonghan; Sharma, Abhishek A.; Bain, James A.; Picard, Yoosuf N.; Skowronski, Marek

Electronic Instabilities Leading to Electroformation of Binary Metal Oxide-based Resistive Switches

ADVANCED FUNCTIONAL MATERIALS

IF19

2014-07-09

PREAI

Sharma, Abhishek A.; Noman, Mohammad; Abdelmoula, Mohamed; Skowronski, Marek; Bain, James A.

Mechanism of localized electrical conduction at the onset of electroforming in TiO2 based resistive switching devices

APPLIED PHYSICS LETTERS

IF3.6

2014-03-20

PREAI

Noman, Mohammad; Sharma, Abhishek A.; Lu, Yi Meng; Kamaladasa, Ranga; Skowronski, Marek; Salvador, Paul A.; Bain, James A.

研究方向