S. S. Park - Publications, H-index & Citations

S. S. Park

机构信息待补充

20H指数

63论文数

1.2K被引数

收录论文 21

发表时间

Magnetopolaron effect on shallow donors in GaN

PHYSICAL REVIEW B

IF3.7

2006-11-17

PREAI

Wysmolek, A.; Stepniewski, R.; Potemski, M.; Chwalisz-Pietka, B.; Pakula, K.; Baranowski, J. M.; Look, D. C.; Park, S. S.; Lee, K. Y.

Long carrier lifetimes in GaN epitaxial layers grown using TIN porous network templates -: art. no. 232106

APPLIED PHYSICS LETTERS

IF3.6

2005-06-03

PREAI

Özgür, Ü; Fu, Y; Moon, YT; Yun, F; Morkoç, H; Everitt, HO; Park, SS; Lee, KY

Reply to Comment on 'Recombination of excitons bound to oxygen and silicon donors in freestanding GaN'

PHYSICAL REVIEW B

IF3.7

2004-04-15

PREAI

Wysmolek, A; Korona, KP; Stepniewski, R; Baranowski, JM; Bloniarz, J; Potemski, M; Jones, RL; Look, DC; Kuhl, J; Park, SS; Lee, SK

Effects of hydrostatic and uniaxial stress on the Schottky barrier heights of Ga-polarity and N-polarity n-GaN

APPLIED PHYSICS LETTERS

IF3.6

2004-03-22

PREAI

Liu, Y; Kauser, MZ; Nathan, MI; Ruden, PP; Dogan, S; Morkoç, H; Park, SS; Lee, KY

Optically detected magnetic resonance of (effective-mass) shallow acceptors in Si-doped GaN homoepitaxial layers

PHYSICAL REVIEW B

IF3.7

2003-11-07

PREAI

Glaser, ER; Freitas, JA; Shanabrook, BV; Koleske, DD; Lee, SK; Park, SS; Han, JY

160-A bulk GaN Schottky diode array

APPLIED PHYSICS LETTERS

IF3.6

2003-10-13

PREAI

Baik, KH; Irokawa, Y; Kim, J; LaRoche, JR; Ren, F; Park, SS; Park, YJ; Pearton, SJ

Current-voltage and reverse recovery characteristics of bulk GaN p-i-n rectifiers

APPLIED PHYSICS LETTERS

IF3.6

2003-09-15

PREAI

Irokawa, Y; Luo, B; Kim, J; LaRoche, JR; Ren, F; Baik, KH; Pearton, SJ; Pan, CC; Chen, GT; Chyi, JI; Park, SS; Park, YJ

Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy (vol 82, pg 3433, 2003)

APPLIED PHYSICS LETTERS

IF3.6

2003-06-23

OAAI

Oila, J; Kivioja, J; Ranki, V; Saarinen, K; Look, DC; Molnar, RJ; Park, SS; Lee, SK; Han, JY

Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2003-05-19

126

PREAI

Oila, J; Kivioja, J; Ranki, V; Saarinen, K; Look, DC; Molnar, RJ; Park, SS; Lee, SK; Han, JY

PHYSICAL REVIEW B

IF3.7

2002-12-30

PREAI

Freitas, JA; Moore, WJ; Shanabrook, BV; Braga, GCB; Lee, SK; Park, SS; Han, JY

Recombination of excitons bound to oxygen and silicon donors in freestanding GaN

PHYSICAL REVIEW B

IF3.7

2002-12-26

PREAI

Wysmolek, A; Korona, KP; Stepniewski, R; Baranowski, JM; Bloniarz, J; Potemski, M; Jones, RL; Look, DC; Kuhl, J; Park, SS; Lee, SK

Two charge states of dominant acceptor in unintentionally doped GaN:: Evidence from photoluminescence study

APPLIED PHYSICS LETTERS

IF3.6

2002-12-23

PREAI

Reshchikov, MA; Morkoç, H; Park, SS; Lee, KY

69Ga and 71Ga NMR studies of quadrupole interaction in the free-standing GaN single crystals grown by hydride vapor-phase epitaxy -: art. no. 195210

PHYSICAL REVIEW B

IF3.7

2002-05-10

PREAI

Park, IW; Choi, H; Kim, HJ; Shin, HW; Park, SS; Choh, SH

Magneto-optical studies of free-standing hydride-Vapor-phase epitaxial GaN

PHYSICAL REVIEW B

IF3.7

2002-02-06

PREAI

Moore, WJ; Freitas, JA; Lee, SK; Park, SS; Han, JY

β-Ga2O3 nanowires synthesized from milled GaN powders

APPLIED PHYSICS LETTERS

IF3.6

2002-01-21

PREAI

Kim, BC; Sun, KT; Park, KS; Im, KJ; Noh, T; Sung, MY; Kim, S; Nahm, S; Choi, YN; Park, SS

Photoluminescence of GaN grown by molecular-beam epitaxy on a freestanding GaN template

APPLIED PHYSICS LETTERS

IF3.6

2001-12-03

PREAI

Reshchikov, MA; Huang, D; Yun, F; He, L; Morkoç, H; Reynolds, DC; Park, SS; Lee, KY

Yellow and green luminescence in a freestanding GaN template

APPLIED PHYSICS LETTERS

IF3.6

2001-05-14

PREAI

Reshchikov, MA; Morkoç, H; Park, SS; Lee, KY

Transient photoluminescence of defect transitions in freestanding GaN

APPLIED PHYSICS LETTERS

IF3.6

2001-05-07

OAAI

Reshchikov, MA; Morkoç, H; Park, SS; Lee, KY

Characterization of free-standing hydride vapor phase epitaxy GaN

APPLIED PHYSICS LETTERS

IF3.6

2001-04-16

OAAI

Jasinski, J; Swider, W; Liliental-Weber, Z; Visconti, P; Jones, KM; Reshchikov, MA; Yun, F; Morkoç, H; Park, SS; Lee, KY

Optical properties of GaN grown by hydride vapor-phase epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2001-01-15

PREAI

Oh, E; Lee, SK; Park, SS; Lee, KY; Song, IJ; Han, JY

研究方向