160-A bulk GaN Schottky diode array

doi:10.1063/1.1618022

2003-10-13

PRE

DOI：10.1063/1.1618022

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摘要

En 中文

Pt Schottky rectifier arrays were fabricated on 200-mum-thick, freestanding GaN layers. Even with the reduced dislocation density in these layers (similar to10(5) cm(-2)) relative to conventional GaN on sapphire (>10(8) cm(-2)), rectifiers fabricated on the freestanding GaN show a strong dependence of reverse breakdown on contact diameter. We show that by interconnecting the output of many (similar to130) smaller (500 mumx500 mum) rectifiers, we can achieve high total forward output current (161 A at 7.12 V), low forward turn-on voltage of similar to3 V, and maintain the reverse breakdown voltage. The on/off ratio of the rectifier array was similar to8x10(7) at 5 V/-100 V. (C) 2003 American Institute of Physics.

Keyword:

BREAKDOWN VOLTAGE

POWER

RECTIFIERS

PERFORMANCE

DEVICES

DESIGN

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期刊

Applied Physics Letters

IF:

3.6

论文数:

10.4W

被引数:

17.8W

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