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T

Toshiaki Ono

University of California System

13H指数
112论文数
1.3K被引数
收录论文 3
发表时间
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Quantifying doping-dependent electron-phonon scattering rates in silicon by inelastic x-ray scattering and first-principles lattice dynamics
errPHYSICAL REVIEW MATERIALS
IF3.4
err2023-10-13
err2
PREAI
errUchiyama, Hiroshi; Liu, Te-Huan; Ono, Toshiaki; Fujise, Jun; Liao, Bolin; Ju, Shenghong; Chen, Gang; Shiomi, Junichiro
err分享
err收藏
Effect of heavy boron doping on oxygen precipitation in Czochralski silicon substrates of epitaxial wafers
errJOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF3.3
err2000-01-01
err35
PREAI
errSueoka, K; Akatsuka, M; Yonemura, M; Ono, T; Asayama, E; Katahama, H
err分享
err收藏
Oxygen diffusion in heavily antimony-, arsenic-, and boron-doped Czochralski silicon wafers
errAPPLIED PHYSICS LETTERS
IF3.6
err1999-06-14
err25
PREAI
errOno, T; Rozgonyi, GA; Asayama, E; Horie, H; Tsuya, H; Sueoka, K
err分享
err收藏

研究方向

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合作学者
合作期刊
陈刚 封面图
陈刚 (Gang Chen)
H 指数: 157 · 论文数: 1.5K
J
Junichiro Shiomi
H 指数: 60 · 论文数: 493
G
G. A. Rozgonyi
H 指数: 36 · 论文数: 333
H
Hiroshi Uchiyama
H 指数: 31 · 论文数: 276
T
Te‐Huan Liu
H 指数: 30 · 论文数: 84
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