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M

M. Seelmann‐Eggebert

fraunhofer gesellschaft

25H指数
114论文数
2.1K被引数
收录论文 3
发表时间
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MHEMT G-Band Low-Noise Amplifiers
errIEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY
IF4
err2014-07-01
err9
PREAI
errKarkkainen, Mikko; Kantanen, Mikko; Caujolle-Bert, Sylvain; Varonen, Mikko; Weber, Rainer; Leuther, Arnulf; Seelmann-Eggebert, Matthias; Alanne, Ari; Jukkala, Petri; Narhi, Tapani; Halonen, Kari A. I.
err分享
err收藏
Polarity determination for GaN films grown on (0001) sapphire and high-pressure-grown GaN single crystals
errAPPLIED PHYSICS LETTERS
IF3.6
err1998-08-03
err175
PREAI
errRouviere, JL; Weyher, JL; Seelmann-Eggebert, M; Porowski, S
err分享
err收藏
Polarity of (00.1) GaN epilayers grown on a (00.1) sapphire
errAPPLIED PHYSICS LETTERS
IF3.6
err1997-11-03
err174
PREAI
errSeelmannEggebert, M; Weyher, JL; Obloh, H; Zimmermann, H; Rar, A; Porowski, S
err分享
err收藏

研究方向

暂时未获取到该数据
合作学者
合作期刊
S
S. Porowski
H 指数: 54 · 论文数: 467
J
Jean‐Luc Rouvière
H 指数: 47 · 论文数: 277
K
K. Halonen
H 指数: 43 · 论文数: 686
A
Arnulf Leuther
H 指数: 36 · 论文数: 375
J
J.L. Weyher
H 指数: 36 · 论文数: 223
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