J. Ramer - Publications, H-index & Citations

J. Ramer

机构信息待补充

18H指数

60论文数

1.3K被引数

收录论文 10

发表时间

Observation of In concentration variations in InGaN/GaN quantum-well heterostructures by scanning capacitance microscopy

APPLIED PHYSICS LETTERS

IF3.6

2005-05-12

PREAI

Zhou, X; Yu, ET; Florescu, DI; Ramer, JC; Lee, DS; Ting, SM; Armour, EA

Observation of subsurface monolayer thickness fluctuations in InGaN/GaN quantum wells by scanning capacitance microscopy and spectroscopy

APPLIED PHYSICS LETTERS

IF3.6

2004-07-19

PREAI

Zhou, X; Yu, ET; Florescu, D; Ramer, JC; Lee, DS; Armour, EA

InGaN/GaN single-quantum-well light-emitting diodes optical output efficiency dependence on the properties of the barrier layer separating the active and p-layer regions

APPLIED PHYSICS LETTERS

IF3.6

2004-06-21

PREAI

Florescu, DI; Ramer, JC; Lee, DS; Armour, EA

Investigation of V-Defects and embedded inclusions in InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on (0001) sapphire

APPLIED PHYSICS LETTERS

IF3.6

2003-07-07

OAAI

Florescu, DI; Ting, SM; Ramer, JC; Lee, DS; Merai, VN; Parkeh, A; Lu, D; Armour, EA; Chernyak, L

Thermal conductivity of fully and partially coalesced lateral epitaxial overgrown GaN/sapphire (0001) by scanning thermal microscopy

APPLIED PHYSICS LETTERS

IF3.6

2000-09-04

120

PREAI

Florescu, DI; Asnin, VM; Pollak, FH; Jones, AM; Ramer, JC; Schurman, MJ; Ferguson, I

Influence of oxygen on the activation of p-type GaN

APPLIED PHYSICS LETTERS

IF3.6

2000-04-17

PREAI

Hull, BA; Mohney, SE; Venugopalan, HS; Ramer, JC

High spatial resolution thermal conductivity of lateral epitaxial overgrown GaN/sapphire (0001) using a scanning thermal microscope

APPLIED PHYSICS LETTERS

IF3.6

1999-08-30

PREAI

Asnin, VM; Pollak, FH; Ramer, J; Schurman, M; Ferguson, I

Raman microscopy of lateral epitaxial overgrowth of GaN on sapphire

APPLIED PHYSICS LETTERS

IF3.6

1999-06-07

PREAI

Pophristic, M; Long, FH; Schurman, M; Ramer, J; Ferguson, IT

Nonalloyed Ti/Al ohmic contacts to n-type GaN using high-temperature premetallization anneal

APPLIED PHYSICS LETTERS

IF3.6

1996-10-28

104

PREAI

Lester, LF; Brown, JM; Ramer, JC; Zhang, L; Hersee, SD; Zolper, JC

Electron cyclotron resonance etching characteristics of GaN in SiCl4/Ar

APPLIED PHYSICS LETTERS

IF3.6

1996-01-15

PREAI

Zhang, L; Ramer, J; Brown, J; Zheng, K; Lester, LF; Hersee, SD

研究方向