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Y. J. Park

samsung

9H指数
37论文数
321被引数
收录论文 6
发表时间
Evaluation of radiative efficiency in InGaN blue-violet laser-diode structures using electroluminescence characteristics
err2006-10-23
err34
PREAI
errRyu, H. Y.; Ha, K. H.; Chae, J. H.; Kim, K. S.; Son, J. K.; Nam, O. H.; Park, Y. J.; Shim, J. I.
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160-A bulk GaN Schottky diode array
err2003-10-13
err21
PREAI
errBaik, KH; Irokawa, Y; Kim, J; LaRoche, JR; Ren, F; Park, SS; Park, YJ; Pearton, SJ
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Carrier loss and luminescence degradation in green-light-emitting InGaN quantum wells with micron-scale indium clusters
err2003-09-29
err63
PREAI
errCho, YH; Lee, SK; Kwack, HS; Kim, JY; Lim, KS; Kim, HM; Kang, TW; Lee, SN; Seon, MS; Nam, OH; Park, YJ
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Current-voltage and reverse recovery characteristics of bulk GaN p-i-n rectifiers
err2003-09-15
err39
PREAI
errIrokawa, Y; Luo, B; Kim, J; LaRoche, JR; Ren, F; Baik, KH; Pearton, SJ; Pan, CC; Chen, GT; Chyi, JI; Park, SS; Park, YJ
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