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M

Matteo Bosi

consiglio nazionale delle ricerche (cnr)

32H指数
195论文数
4.0K被引数
收录论文 57
发表时间
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Highly Sensitive Electrochemical Biosensors for miRNA-122 Detection with Two-Dimensional MoS2 Monolayers
errLANGMUIR
IF3.9
err2026-01-01
err0
PREAI
errIbeaho, Wilson Finold; Esposito, Fiorenza; Liu, Hanyun; Li, Youxun; Cao, Chuanlong; Han, Yingzi; Dai, Yunli; Bosi, Matteo; Huang, Fang; Seravalli, Luca; Jiang, Lei
err分享
err收藏
Nucleation and faceting in (001) r-GeO2 heteroepitaxy on r-TiO2 by metalorganic vapor phase epitaxy
errApplied Surface Science
IF6.9
err2025-12-31
err0
errOAAI
errG. Cicconi; M. Bosi; F. Mezzadri; A. Ugolotti; I. Cora; L. Seravalli; H. Tornatzky; J. Lähnemann; M.R. Wagner; P. Bhatt; P.K. Thakur; T.-L. Lee; A. Regoutz; A. Baraldi; D. Bersani; L. Cademartiri; A. Parisini; B. Pécz; L. Miglio; R. Fornari
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Structural insights into nucleation and grain orientation in β-Ga2O3 films grown by MOVPE on off-axis 4H-SiC substrates通过MOVPE在偏轴4H-SiC衬底上生长的β-Ga2O3薄膜中成核与晶粒取向的结构见解
errApplied Surface Science
IF6.9
err2025-11-11
err0
errOAAI
errG. Sfuncia; C. Bongiorno; G. Nicotra; N. Licciardello; D. Sanfilippo; D. Patti; M. Bosi; L. Seravalli; F. Mezzadri; A. Parisini; R. Fornari
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Supersaturation-Dependent Competition between β and κ Phases in the MOVPE Growth of Ga2O3 on Al2O3 (0001) and GaN (0001) Substrates
errACS Applied Materials and Interfaces
IF8.2
err2025-10-01
err0
PREAI
errSeravalli, L.; Ugolotti, A.; Bergamaschini, R.; Bosi, M.; Cora, I.; Mezzadri, F.; Mazzolini, P.; Cademartiri, L.; Bertoni, I.; Fogarassy, Zs.; Pecz, B.; Bierwagen, O.; Ardenghi, A.; Leone, S.; Nasi, L.; Miglio, L.; Fornari, R.
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Impact of the Schottky Barrier and Contact-Induced Strain Variations inside the Channel on the Electrical Behavior of Monolayer MoS2 Transistors肖特基势垒及接触诱导的应变变化对单层MoS2晶体管电学行为的影响
errSmall Science
IF8.3
err2025-09-28
err0
errOAAI
errSalvatore Ethan Panasci; Emanuela Schilirò; Giuseppe Greco; Patrick Fiorenza; Marilena Vivona; Salvatore Di Franco; Fabrizio Roccaforte; Fiorenza Esposito; Matteo Bosi; Giovanni Attolini; Igor Píš; Federica Bondino; Maddalena Pedio; Antonino Madonia; Marco Cannas; Simonpietro Agnello; Luca Seravalli; Filippo Giannazzo
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Effect of lithium diffusion into Ga2O3 thin films锂扩散对Ga2O3薄膜的影响
errApplied Surface Science
IF6.9
err2025-07-04
err0
errOAAI
errA. Sacchi; M. Sidoli; A. Ardenghi; O. Bierwagen; J. Kler; A. Falkenstein; R.A. De Souza; M. Martin; D. Spallek; J. Lähnemann; H. Tornatzky; M.R. Wagner; A. Parisini; M. Pavesi; M. Bosi; L. Seravalli; J.B. Varley; G. Spaggiari; D. Bersani; K. Mizohata; F. Tuomisto; G. Magnani; D. Pontiroli; M. Riccò; F. Mezzadri; S. Pasini; A. Bosio; R. Fornari; P. Mazzolini
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Assessment of Trapping Phenomena in As-Grown and Thermally-Treated Si-Doped κ-Ga2O3 Layers via Optical Admittance Spectroscopy通过光学导纳谱法对As-Grown和Thermally-Treated Si掺杂κ-Ga2O3层的俘获现象进行评估
errAdvanced Electronic Materials
IF5.3
err2025-07-03
err0
errOAAI
errPayam Rajabi Kalvani; Antonella Parisini; Maura Pavesi; Francesco Mattei; Piero Mazzolini; Kingsley Egbo; Oliver Bierwagen; Abderrahim Moumen; Salvatore Vantaggio; Samaneh Shapouri; Matteo Bosi; Luca Seravalli; Roberto Fornari
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Self-powered NiO/κ-Ga2O3 heterojunction photodiode for fast broadband ultraviolet (UV) radiation detection自供电NiO/κ-Ga2O3异质结光电二极管，用于快速宽带紫外（UV）辐射检测
errOPTICAL MATERIALS
IF4.2
err2025-05-25
err0
errOAAI
errMoumen, A.; Kalvani, P. Rajabi; Mattei, F.; Foti, G.; Parisini, A.; Mosca, R.; Pavesi, M.; Bosi, M.; Seravalli, L.; Mezzadri, F.; Baraldi, A.; Mazzolini, P.; Vantaggio, S.; Bosio, A.; Fornari, R.
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Planar hybrid UV-C photodetectors based on aerosol-jet printed PEDOT:PSS on different Ga2O3 thin films基于气溶胶喷射打印PEDOT:PSS的不同Ga2O3薄膜平面混合UV-C光电探测器
errMATERIALS TODAY PHYSICS
IF9.7
err2025-02-01
err2
PREAI
errMattei, F.; Vurro, D.; Spoltore, D.; Pavesi, M.; Kalvani, P. Rajabi; Pasini, S.; Foti, G.; D'Angelo, P.; Bosio, A.; Baraldi, A.; Mezzadri, F.; Mazzolini, P.; Vantaggio, S.; Bosi, M.; Seravalli, L.; Tarabella, G.; Parisini, A.; Fornari, R.
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Influence of the Carrier Gas Flow in the CVD Synthesis of 2-Dimensional MoS2 Based on the Spin-Coating of Liquid Molybdenum Precursors
errNANOMATERIALS
IF4.3
err2024-10-31
err0
errOAAI
errEsposito, Fiorenza; Bosi, Matteo; Attolini, Giovanni; Rossi, Francesca; Fornari, Roberto; Fabbri, Filippo; Seravalli, Luca
err分享
err收藏
Engineering shallow and deep level defects in x-Ga 2 O 3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments
errMATERIALS TODAY PHYSICS
IF9.7
err2024-06-01
err2
errOAAI
errMazzolini, P.; Varley, J. B.; Parisini, A.; Sacchi, A.; Pavesi, M.; Bosio, A.; Bosi, M.; Seravalli, L.; Janzen, B. M.; Marggraf, M. N.; Bernhardt, N.; Wagner, M. R.; Ardenghi, A.; Bierwagen, O.; Falkenstein, A.; Kler, J.; De Souza, R. A.; Martin, M.; Mezzadri, F.; Borelli, C.; Fornari, R.
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Photoelectron Holographic Study for Atomic Site Occupancy for Si Dopants in Si-Doped κ-Ga2O3(001)
errNANO LETTERS
IF9.1
err2024-03-07
err3
PREAI
errTsai, Yuhua; Hashimoto, Yusuke; Sun, Zexu; Moriki, Takuya; Tadamura, Takashi; Nagata, Takahiro; Mazzolini, Piero; Parisini, Antonella; Bosi, Matteo; Seravalli, Luca; Matsushita, Tomohiro; Yamashita, Yoshiyuki
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Structural and Photoelectronic Properties of κ-Ga2O3 Thin Films Grown on Polycrystalline Diamond Substrates
errMATERIALS
IF3.2
err2024-01-22
err4
errOAAI
errGirolami, Marco; Bosi, Matteo; Pettinato, Sara; Ferrari, Claudio; Lolli, Riccardo; Seravalli, Luca; Serpente, Valerio; Mastellone, Matteo; Trucchi, Daniele M.; Fornari, Roberto
err分享
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Role of density gradients in the growth dynamics of 2-dimensional MoS2 using liquid phase molybdenum precursor in chemical vapor deposition
errAPPLIED SURFACE SCIENCE
IF6.9
err2023-12-01
err5
errOAAI
errEsposito, F.; Bosi, M.; Attolini, G.; Rossi, F.; Panasci, S. E.; Fiorenza, P.; Giannazzo, F.; Fabbri, F.; Seravalli, L.
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Atomic structure and annealing-induced reordering of ε-Ga2O3: A Rutherford backscattering/channeling and spectroscopic ellipsometry study
errAPPLIED SURFACE SCIENCE
IF6.9
err2023-11-01
err4
errOAAI
errZolnai, Z.; Petrik, P.; Nemeth, A.; Volk, J.; Bosi, M.; Seravalli, L.; Fornari, R.
err分享
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Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2023-09-21
err3
errOAAI
errKalvani, Payam Rajabi; Parisini, Antonella; Sozzi, Giovanna; Borelli, Carmine; Mazzolini, Piero; Bierwagen, Oliver; Vantaggio, Salvatore; Egbo, Kingsley; Bosi, Matteo; Seravalli, Luca; Fornari, Roberto
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Free exciton and bound excitons on Pb and I vacancies and O and I substituting defects in PbI2: Photoluminescence and DFT calculations
errAPPLIED SURFACE SCIENCE
IF6.9
err2023-07-01
err6
PREAI
errGolovynskyi, Sergii; Datsenko, Oleksandr I.; Usman, Muhammad; Perez-Jimenez, Ana I.; Chaigneau, Marc; Bosi, Matteo; Seravalli, Luca; Hidouri, Tarek; Golovynska, Iuliia; Li, Baikui; Wu, Honglei
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Built-in tensile strain dependence on the lateral size of monolayer MoS2 synthesized by liquid precursor chemical vapor deposition
errNANOSCALE
IF5.1
err2023-01-01
err10
errOAAI
errSeravalli, L.; Esposito, F.; Bosi, M.; Aversa, L.; Trevisi, G.; Verucchi, R.; Lazzarini, L.; Rossi, F.; Fabbri, F.
err分享
err收藏
Orthorhombic undoped κ-Ga2O3 epitaxial thin films for sensitive, fast, and stable direct X-ray detectors
errJOURNAL OF MATERIALS CHEMISTRY C
IF5.1
err2023-01-01
err32
errOAAI
errGirolami, Marco; Bosi, Matteo; Serpente, Valerio; Mastellone, Matteo; Seravalli, Luca; Pettinato, Sara; Salvatori, Stefano; Trucchi, Daniele M. M.; Fornari, Roberto
err分享
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Silane-Mediated Expansion of Domains in Si-Doped κ-Ga2O3 Epitaxy and its Impact on the In-Plane Electronic Conduction
errADVANCED FUNCTIONAL MATERIALS
IF19
err2022-11-07
err16
errOAAI
errMazzolini, Piero; Fogarassy, Zsolt; Parisini, Antonella; Mezzadri, Francesco; Diercks, David; Bosi, Matteo; Seravalli, Luca; Sacchi, Anna; Spaggiari, Giulia; Bersani, Danilo; Bierwagen, Oliver; Janzen, Benjamin Moritz; Marggraf, Marcella Naomi; Wagner, Markus R.; Cora, Ildiko; Pecz, Bela; Tahraoui, Abbes; Bosio, Alessio; Borelli, Carmine; Leone, Stefano; Fornari, Roberto
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