未登录

P

Peter J. Wellmann

university of erlangen nuremberg

H指数:29

被引数:4,088

个人简介

暂无内容

教育背景

暂无内容

工作经历

暂无内容

荣誉奖项

暂无内容

Close space physical vapor transport growth of SiC, doped layers and thin crystals

SiC的密闭空间物理气相输运生长、掺杂层和薄膜晶体

Journal of Crystal Growth

IF2

2025-12-010

OAAI

Investigation of amorphous-SiC thin film deposition by RF magnetron sputtering for optical applications

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2024-11-012

PRE

Synthesis and Characterization of BaZrS3 Thin Films via Stacked Layer Methodology: A Comparative Study of BaZrS3 on Zirconium Foil and Silicon Carbide Substrates

ADVANCED ENGINEERING MATERIALS

IF3.3

2024-04-045

OAAI

Novel Photonic Applications of Silicon Carbide

碳化硅的新型光子应用

IF3.2

2023-01-2226

OAAI

In situ bow reduction during sublimation growth of cubic silicon carbide

REVIEWS ON ADVANCED MATERIALS SCIENCE

IF3.9

2022-12-151

OA

Determination of site occupancy of boron in 6H-SiC by multiple-wavelength neutron holography

APPLIED PHYSICS LETTERS

IF3.6

2022-03-284

OA

Impact of Mechanical Stress and Nitrogen Doping on the Defect Distribution in the Initial Stage of the 4H-SiC PVT Growth Process

IF3.2

2022-03-039

OAAI

New Approaches and Understandings in the Growth of Cubic Silicon Carbide

IF3.2

2021-09-1636

OAAI

Overgrowth of Protrusion Defects during Sublimation Growth of Cubic Silicon Carbide Using Free-Standing Cubic Silicon Carbide Substrates

CRYSTAL GROWTH & DESIGN

IF3.4

2021-05-287

OAAI

Analysis of Compositional Gradients in Cu(In,Ga)(S,Se)2 Solar Cell Absorbers Using Energy Dispersive X-ray Analysis with Different Acceleration Energies

IF3.2

2021-05-261

OAAI

Epitaxial Metal Halide Perovskites by Inkjet-Printing on Various Substrates

ADVANCED FUNCTIONAL MATERIALS

IF19

2020-09-0424

OAAI

Sytnyk, Mykhailo; Yousefi-Amin, Amir-Abbas; Freund, Tim; Prihoda, Annemarie; Goetz, Klaus; Unruh, Tobias; Harreiss, Christina; Will, Johannes; Spiecker, Erdmann; Levchuk, Jevgen; Osvet, Andres; Brabec, Christoph J.; Kuenecke, Ulrike; Wellmann, Peter; Volobuev, Valentin V.; Korczak, Jedrzej; Szczerbakow, Andrzej; Story, Tomasz; Simbrunner, Clemens; Springholz, Gunther; Wechsler, Daniel; Lytken, Ole; Lotter, Sebastian; Kampmann, Felix; Maultzsch, Janina; Singh, Kamalpreet; Voznyy, Oleksandr; Heiss, Wolfgang

Comparison of Achievable Contrast Features in Computed Tomography Observing the Growth of a 4H-SiC Bulk Crystal

IF3.2

2019-11-065

OAAI

Optimization of the SiC Powder Source Material for Improved Process Conditions During PVT Growth of SiC Boules

IF3.2

2019-10-089

OAAI

Investigation of the Growth Kinetics of SiC Crystals during Physical Vapor Transport Growth by the Application of In Situ 3D Computed Tomography Visualization

ADVANCED ENGINEERING MATERIALS

IF3.3

2019-09-307

OAAI

Influence of Morphological Changes in a Source Material on the Growth Interface of 4H-SiC Single Crystals

IF3.2

2019-08-148

OAAI

Annealing-Induced Changes in the Nature of Point Defects in Sublimation-Grown Cubic Silicon Carbide

IF3.2

2019-08-062

OAAI

Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks

IF3.2

2019-07-244

OAAI

Analysis of the Basal Plane Dislocation Density and Thermomechanical Stress during 100 mm PVT Growth of 4H-SiC

IF3.2

2019-07-0914

OAAI

Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth

IF3.2

2019-07-067

OAAI

An adhesive bonding approach by hydrogen silsesquioxane for silicon carbide-based LED applications

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2019-03-014

OAAI