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Lida Ansari

Tyndall National Institute

H指数:16

被引数:1,040

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Correlating atomic structure with carrier transport in defective MoS2 with grain boundary via machine-learned potentials

通过机器学习势能关联缺陷MoS2中晶界处的原子结构与载流子传输

Communications Materials

IF9.6

2026-09-150

OAAI

Air sensitivity of GaSe 2D material and its potential implications on device reliability

GaSe二维材料的空气敏感性与对器件可靠性的潜在影响

IF4.5

2026-04-170

OA

Defect-tuned conduction in ultrathin MoTe2 field-effect transistors

缺陷调控的导电性在超薄MoTe2场效应晶体管中

j. mater. chem. c

IF0

2026-04-100

OAAI

Electrostatically doped WSe2 TFET: critical design rules for scalable and high-frequency logic applications

静电掺杂WSe2 TFET：可扩展和高频逻辑应用的关键设计规则

Semiconductor Science and Technology

IF2.1

2026-01-010

PRE

Ambipolar to anti-ambipolar light induced transition in WSe 2 -based FETs

双极性到反双极性的光致过渡现象在基于WSe2的FETs中

IF0

2025-12-130

OAAI

Oxidation-driven structural, chemical and electrical transformation in ZrSe2

氧化驱动的ZrSe2的结构、化学和电学转变

Materials Today Advances

IF8

2025-11-060

OAAI

Atomic-Scale Defects and Edge Engineering of ZrSe2 Nanosheets: Correlated Microscopy; Spectroscopy and DFT Study with Implications for Quantum Device Applications

原子级缺陷和ZrSe2纳米片的边缘工程：相关显微镜、光谱学和DFT研究及其在量子器件应用中的意义

ACS Applied Nano Materials

IF5.5

2025-10-210

OAAI

Dopingless Ambipolar Field-Effect Transistors Based on MoTe2 2D Material for CMOS Nanoelectronics

无掺杂双极场效应晶体管基于MoTe2二维材料用于CMOS纳米电子学

Advanced Electronic Materials

IF5.3

2025-09-020

OAAI

Investigation of hybrid plasmons in a highly crystalline Bi2Se3/C60 heterostructure using low-loss electron energy loss spectroscopy

利用低损失电子能量损失谱研究高度结晶的Bi2Se3/C60异质结构中的混合等离激元

Communications Materials

IF9.6

2025-07-290

OAAI

On the Enhanced p-Type Performance of Back-Gated WS2 Devices

关于背栅WS2器件增强的p型性能

ADVANCED ELECTRONIC MATERIALS

IF5.3

2025-04-290

OAAI

Cadmium passivation induced negative differential resistance in cove edge graphene nanoribbon device

SCIENTIFIC REPORTS

IF3.9

2025-03-120

OAAI

Investigating vertical charge plasma tunnel field effect transistors beyond semiclassical assumptions

SCIENTIFIC REPORTS

IF3.9

2025-02-081

OAAI

ReS2/Si 2D/3D vertical heterojunction as a self-powered photodiode

ReS2/Si 2D/3D垂直异质结作为自供电光电二极管

APPLIED PHYSICS LETTERS

IF3.6

2024-10-241

PRE

Electronic structure of rare-earth erbium-doped platinum diselenide: A density functional theory study

稀土铒掺杂二硒化铂的电子结构: 密度泛函理论研究

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS

IF4.9

2024-07-013

OAAI

Revealing the influence of edge states on the electronic properties of PtSe2

揭示边缘态对PtSe2电子性质的影响

APPLIED MATERIALS TODAY

IF6.9

2023-12-012

OAAI

Gas sensing selectivity of SnO2-xNiO sensors for homogeneous gases and its selectivity mechanism: Experimental and theoretical studies

SENSORS AND ACTUATORS A-PHYSICAL

IF4.9

2023-05-0128

PRE

Influence of heat treatment on H2S gas sensing features of NiO thin films deposited via thermal evaporation technique

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2023-02-0159

PRE

Structural and electrical characterisation of PtS from H2S-converted Pt

H2S-converted Pt的结构和电气特性

APPLIED MATERIALS TODAY

IF6.9

2021-12-019

OAAI

Coexistence of Negative and Positive Photoconductivity in Few-Layer PtSe2 Field-Effect Transistors

多层PtSe2场效应晶体管中负和正光电导的共存

ADVANCED FUNCTIONAL MATERIALS

IF19

2021-08-0364

OAAI

Imaging and identification of point defects in PtTe2

PtTe2点缺陷的成像与识别

NPJ 2D MATERIALS AND APPLICATIONS

IF8.8

2021-01-0832

OAAI