Mohammad Khaled Shakfa

physics

H指数:21

被引数:1,399

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Systematic thermal processing of GaN epilayers: Temperature-Driven surface evolution and kinetic analysis

氮化镓外延层的系统热处理：温度驱动的表面演化与动力学分析

Materials Science in Semiconductor Processing

IF4.6

2026-05-070

PRE

Horizontally Aligned Carbon Nanotube-Based Rectenna for Selective Terahertz Photodetection

水平排列碳纳米管基整流天线用于选择性太赫兹光电探测

Materials Today Nano

IF8.2

2025-11-050

OAAI

Sol–gel silica coatings for enhanced silicon emission: microstructural origins and optical implications

Sol–gel二氧化硅涂层增强硅发射：微观结构起源与光学意义

Nanoscale Adv.

IF4.6

2025-10-220

OAAI

Dual photonic–electronic behavior in Cs2NaEuCl6 double perovskite: Photoluminescence, photoconductivity, and structural stability for optoelectronic applications

Cs2NaEuCl6双钙钛矿中的双光子-电子行为：用于光电器件应用的发光、光导性和结构稳定性

Optical Materials

IF4.2

2025-09-180

PRE

Structural and optical characterizations of cubic GaN layers grown by MOVPE on GaAs(114) substrate

OPTICAL MATERIALS

IF4.2

2024-08-011

PRE

Controlled nano-roughening of the GaN surface by post-growth thermal annealing

APPLIED SURFACE SCIENCE

IF6.9

2024-05-010

PRE

High-resolution molecular fingerprinting in the 11.6-15 μm range by a quasi-CW difference-frequency-generation laser source

OPTICS EXPRESS

IF3.3

2023-01-202

Correlation of structural and optical properties of AlGaN films grown on SiN-treated sapphire by MOVPE

MOVPE在SiN处理的蓝宝石上生长的AlGaN薄膜的结构和光学性质的相关性

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS

IF4.6

2021-01-013

OAAI

Optical frequency metrology in the bending modes region

COMMUNICATIONS PHYSICS

IF5.8

2020-10-0614

OAAI

THz behavior originates from di fferent arrangements of coalescent GaN nanorods grown on Si (111) and Si (100) substrates

APPLIED SURFACE SCIENCE

IF6.9

2020-08-017

OAAI

Unambiguously Enhanced Ultraviolet Luminescence of AlGaN Wavy Quantum Well Structures Grown on Large Misoriented Sapphire Substrate

ADVANCED FUNCTIONAL MATERIALS

IF19

2019-09-26144

PREAI

Observation of piezotronic and piezo-phototronic effects in n-InGaN nanowires/Ti grown by molecular beam epitaxy

观察分子束外延生长的n-ingan纳米线/Ti中的压电电子效应和压电光电效应

NANO ENERGY

IF17.1

2018-12-0124

OAAI

Graded-Index Separate Confinement Heterostructure AlGaN Nanowires: Toward Ultraviolet Laser Diodes Implementation

ACS PHOTONICS

IF6.7

2018-06-1959

PREAI

Quantified hole concentration in AlGaN nanowires for high-performance ultraviolet emitters

NANOSCALE

IF5.1

2018-01-0130

OAAI

Surface-Passivated AlGaN Nanowires for Enhanced Luminescence of Ultraviolet Light Emitting Diodes

用于增强紫外发光二极管发光的表面钝化AlGaN纳米线

ACS PHOTONICS

IF6.7

2017-12-1977

PREAI

Time-resolved photoluminescence and photoreflectance spectroscopy of GaN layers grown on SiN-treated sapphire substrate: Optical properties evolution at different growth stages

OPTICAL MATERIALS

IF4.2

2017-11-0112

PREAI

Type-I band alignment at MoS2/In0.15Al0.85N lattice matched heterojunction and realization of MoS2 quantum well

APPLIED PHYSICS LETTERS

IF3.6

2017-08-3128

OAAI

Excitation dependence of the photoluminescence lineshape in Ga(NAsP)/GaP multiple quantum well: experiment and Monte-Carlo simulation

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2016-12-012

PREAI

Carrier dynamics in Ga(NAsP)/Si multi-quantum well heterostructures with varying well thickness

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2016-05-014

PREAI

Energy scale of compositional disorder in Ga(AsBi)

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2015-09-307

PREAI

Mohammad Khaled Shakfa

个人简介

教育背景

工作经历

荣誉奖项

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