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J

J. P. Campbell

national institute of standards and technology

23H指数
174论文数
2.1K被引数
收录论文 19
发表时间
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Impact of Measurement Setup on Cryogenic CMOS FET Characterization低温CMOS FET特性表征中测量设置的影响
errIEEE Electron Device Letters
IF4.5
err2026-03-31
err0
PREAI
errJhih-Wei Chen; J. P. Campbell; P. R. Shrestha; Mau-Chung Frank Chang
err分享
err收藏
Temperature-Compensated Multi-Level CMOS Modulators Operating From 10 K to 300 K for Cryogenic Interconnects适用于低温互连的温度补偿多级CMOS调制器（工作温度范围：10 K至300 K）
errIEEE Journal of Microwaves
IF4.9
err2025-10-14
err0
errOAAI
errChristopher Kniss; Abhishek Sharma; Ratanak Phon; Gregory Shimonov; Eran Socher; Pragya R. Shrestha; Karthick Ramu; Jason P. Campbell; Amin Pourvali Kakhki; Richard Al Hadi; Rod Kim
err分享
err收藏
Non-resonant phase sensitive approach for time resolved microwave conductivity in photoactive thin films
errMATERIALS TODAY ADVANCES
IF8
err2024-03-01
err0
errOAAI
errBindra, Jasleen K.; Shrestha, Pragya R.; Engmann, Sebastian; Cruz, Chad D.; Gundlach, David J.; Bittle, Emily G.; Campbell, Jason P.
err分享
err收藏
Resolving Complex Photoconductivity of Perovskite and Organic Semiconductor Films Using Phase-Sensitive Microwave Interferometry
errJOURNAL OF PHYSICAL CHEMISTRY C
IF3.2
err2023-02-17
err1
PREAI
errBindra, Jasleen K.; Shrestha, Pragya R.; Engmann, Sebastian; Cruz, Chad; Nienhaus, Lea; Bittle, Emily G.; Campbell, Jason P.
err分享
err收藏
Scalable microresonators for room-temperature detection of electron spin resonance from dilute, sub-nanoliter volume solids
errSCIENCE ADVANCES
IF12.5
err2020-10-30
err20
errOAAI
errAbhyankar, Nandita; Agrawal, Amit; Shrestha, Pragya; Maier, Russell; McMichael, Robert D.; Campbell, Jason; Szalai, Veronika
err分享
err收藏
Nanoscale MOSFET as a Potential Room-Temperature Quantum Current Source纳米MOSFET作为潜在的室温量子电流源
errMICROMACHINES
IF3
err2020-03-31
err7
errOAAI
errCheung, Kin P.; Wang, Chen; Campbell, Jason P.
err分享
err收藏
Nonresonant Transmission Line Probe for Sensitive Interferometric Electron Spin Resonance Detection
errANALYTICAL CHEMISTRY
IF6.7
err2019-08-05
err6
errOAAI
errShrestha, Pragya R.; Abhyankar, Nandita; Anders, Mark A.; Cheung, Kin P.; Gougelet, Robert; Ryan, Jason T.; Szalai, Veronika; Campbell, Jason P.
err分享
err收藏
Ferroelectricity in Polar Polymer-Based FETs: A Hysteresis Analysis
errADVANCED FUNCTIONAL MATERIALS
IF19
err2018-01-15
err16
errOAAI
errGeorgiou, Vasileia; Veksler, Dmitry; Campbell, Jason P.; Shrestha, Pragya R.; Ryan, Jason T.; Ioannou, Dimitris E.; Cheung, Kin P.
err分享
err收藏
Highly Efficient Rapid Annealing of Thin Polar Polymer Film Ferroelectric Devices at Sub-Glass Transition Temperature
errADVANCED FUNCTIONAL MATERIALS
IF19
err2017-12-18
err2
PREAI
errGeorgiou, Vasileia; Veksler, Dmitry; Ryan, Jason T.; Campbell, Jason P.; Shrestha, Pragya R.; Ioannou, Dimitris E.; Cheung, Kin P.
err分享
err收藏
Electron Spin Resonance Scanning Probe Spectroscopy for Ultrasensitive Biochemical Studies
errANALYTICAL CHEMISTRY
IF6.7
err2015-04-22
err22
PREAI
errCampbell, Jason P.; Ryan, Jason T.; Shrestha, Pragya R.; Liu, Zhanglong; Vaz, Canute; Kim, Ji-Hong; Georgiou, Vasileia; Cheung, Kin P.
err分享
err收藏
Interface-state capture cross section-Why does it vary so much?
errAPPLIED PHYSICS LETTERS
IF3.6
err2015-04-21
err20
PREAI
errRyan, J. T.; Matsuda, A.; Campbell, J. P.; Cheung, K. P.
err分享
err收藏
On the U-shaped continuum of band edge states at the Si/SiO2 interface
errAPPLIED PHYSICS LETTERS
IF3.6
err2011-12-01
err15
PREAI
errRyan, J. T.; Southwick, R. G.; Campbell, J. P.; Cheung, K. P.; Young, C. D.; Suehle, J. S.
err分享
err收藏
Spectroscopic charge pumping investigation of the amphoteric nature of Si/SiO2 interface states
errAPPLIED PHYSICS LETTERS
IF3.6
err2011-06-06
err20
PREAI
errRyan, J. T.; Yu, L. C.; Han, J. H.; Kopanski, J. J.; Cheung, K. P.; Zhang, F.; Wang, C.; Campbell, J. P.; Suehle, J. S.
err分享
err收藏
Negative-bias temperature instability induced electron trapping
errAPPLIED PHYSICS LETTERS
IF3.6
err2008-07-23
err5
PREAI
errCampbell, J. P.; Cheung, K. P.; Suehle, J. S.; Oates, A.
err分享
err收藏
Identification of atomic-scale defect structure involved in the negative bias temperature instability in plasma-nitrided devices
errAPPLIED PHYSICS LETTERS
IF3.6
err2007-09-26
err13
PREAI
errCampbell, J. P.; Lenahan, P. M.; Krishnan, A. T.; Krishnan, S.
err分享
err收藏
Observation of negative bias stressing interface trapping centers in metal gate hafnium oxide field effect transistors using spin dependent recombination
errAPPLIED PHYSICS LETTERS
IF3.6
err2007-03-19
err12
PREAI
errCochrane, C. J.; Lenahan, P. M.; Campbell, J. P.; Bersuker, G.; Neugroschel, A.
err分享
err收藏
Direct observation of the structure of defect centers involved in the negative bias temperature instability
errAPPLIED PHYSICS LETTERS
IF3.6
err2005-11-09
err42
PREAI
errCampbell, JP; Lenahan, PM; Krishnan, AT; Krishnan, S
err分享
err收藏
Interface defects in Si/HfO2-based metal-oxide-semiconductor field-effect transistors -: art. no. 173511
errAPPLIED PHYSICS LETTERS
IF3.6
err2005-04-22
err13
errOAAI
errPribicko, TG; Campbell, JP; Lenahan, PM; Tsai, W; Kerber, A
err分享
err收藏
Density of states of Pb1 Si/SiO2 interface trap centers
errAPPLIED PHYSICS LETTERS
IF3.6
err2002-03-18
err81
PREAI
errCampbell, JP; Lenahan, PM
err分享
err收藏

研究方向

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合作学者
合作期刊
G
G. Bersuker
H 指数: 54 · 论文数: 590
D
David J. Gundlach
H 指数: 54 · 论文数: 258
M
Mau-Chung Frank Chang
H 指数: 47 · 论文数: 582
R
R. D. McMichael
H 指数: 46 · 论文数: 303
A
Amit Agrawal
H 指数: 44 · 论文数: 196
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