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Yoshiyuki Yamashita

national institute for materials science

H指数:37

被引数:4,725

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Facile synthesis of hierarchically engineered MXene with tailored porosity and surface terminations for stable anode Li-ion battery applications

分级工程化MXene的简便合成及其在稳定锂离子电池负极应用中的孔隙和表面终止调控

IF6.2

2026-07-011

PRE

The effect of surface ligands on the surface chemical states and photoluminescence characteristics in cesium lead bromide perovskite nanocrystals

CsPbBr₃钙钛矿纳米晶中表面配体对表面化学状态和光致发光特性的影响

IF4.6

2025-09-030

OA

Atomic position and the chemical state of an active Sn dopant for Sn-doped β-Ga2O3(001)

APPLIED PHYSICS LETTERS

IF3.6

2024-03-142

OA

Photoelectron Holographic Study for Atomic Site Occupancy for Si Dopants in Si-Doped κ-Ga2O3(001)

IF9.1

2024-03-073

PRE

Crystal structures and photoluminescence characteristics of cesium lead bromide perovskite nanoplatelets depending on the antisolvent and ligand used in their syntheses

溴化铯铅钙钛矿纳米片的晶体结构和光致发光特性取决于其合成中使用的反溶剂和配体

IF3.6

2024-01-013

OAAI

Bias voltage induced-electrical conductivity at electrode interfaces of a rutile TiO2 single crystal: Two different mechanisms depending on temperature

金红石TiO2单晶电极界面处的偏压感应电导率: 取决于温度的两种不同机制

SURFACES AND INTERFACES

IF6.3

2024-01-011

OAAI

X-ray Absorption Fine Structural Study of Atomic Structures and Chemical States of Dopants in 4H-SiC(0001)

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2023-06-222

PRE

Direct Observation of Atomic Structures and Chemical States of Active and Inactive Dopant Sites in Mg-Doped GaN (vol 4, pg 4719, 2022)

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2022-10-050

PRE

Direct Observation of Atomic Structures and Chemical States of Active and Inactive Dopant Sites in Mg-Doped GaN

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2022-09-157

PRE

Unraveling the Resistive Switching Mechanisms in LaMnO3+δ-Based Memristive Devices by Operando Hard X-ray Photoemission Measurements

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2021-11-1710

OA

Atomic Structures and Chemical States of Active and Inactive Dopant Sites in Si-Doped GaN

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2021-10-084

PREAI

Heavy carrier doping by hydrogen in the spin-orbit coupled Mott insulator Sr2IrO4

PHYSICAL REVIEW B

IF3.7

2021-07-277

PRE

Interface chemistry of pristine TiN/La: Hf 0.5 Zr 0.5 O 2 capacitors

APPLIED PHYSICS LETTERS

IF3.6

2020-06-2637

PREAI

Evaluation of Band Alignment of SrNbO2N Using Hard X-ray Photoelectron Spectroscopy

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2020-02-185

PREAI

Determination of the input parameters for inelastic background analysis combined with HAXPES using a reference sample

APPLIED SURFACE SCIENCE

IF6.9

2018-02-0123

PREAI

Forming mechanism of Te-based conductive-bridge memories

APPLIED SURFACE SCIENCE

IF6.9

2018-02-019

OAAI

Formation of a K-In-Se Surface Species by NaF/KF Postdeposition Treatment of Cu(In,Ga)Se2 Thin-Film Solar Cell Absorbers

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2017-01-17105

OAAI

Room temperature redox reaction by oxide ion migration at carbon/Gd-doped CeO2 heterointerface probed by an in situ hard x-ray photoemission and soft x-ray absorption spectroscopies

SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS

IF6.9

2016-01-1223

OAAI

In Situ Tuning of Magnetization and Magnetoresistance in Fe3O4 Thin Film Achieved with All-Solid-State Redox Device

IF16

2016-01-0577

PREAI

Hard x-ray photoelectron spectroscopy study of Ge2Sb2Te5; as-deposited amorphous, crystalline, and laser-reamorphized

APPLIED PHYSICS LETTERS

IF3.6

2014-02-126

PREAI