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L

Liemao Cao

Hengyang Normal University

22H指数
67论文数
1.7K被引数
收录论文 30
发表时间
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Computational design of two-dimensional MA2Z4 family field-effect transistor for future Ångström-scale CMOS technology nodes二维MA₂Z₄家族场效应晶体管面向未来埃级CMOS技术节点的计算设计
errInfoMat
IF22.3
err2025-12-03
err0
errOAAI
errChe Chen Tho; Zongmeng Yang; Shibo Fang; Shiying Guo; Liemao Cao; Chit Siong Lau; Fei Liu; Shengli Zhang; Jing Lu; L. K. Ang; Lain-Jong Li; Yee Sin Ang
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Electronic contact properties for Janus MoSiN3H/Graphene heterostructureJanus MoSiN3H/Graphene异质结构的电子接触特性
errPhysica Scripta
IF2.6
err2025-10-06
err0
PREAI
errBo Li; Wu Zhang; Zhen-kun Tang; Liemao Cao
err分享
err收藏
Robust p-type Ohmic Contact in ZrI₂/Dirac semi-metals van der Waals HeterostructuresZrI₂/狄拉克半金属范德瓦尔斯异质结构中的鲁棒p型欧姆接触
errPhys. Chem. Chem. Phys.
IF2.9
err2025-08-15
err0
PREAI
errWu Zhang; Bo Li; Zhenkun Tang; Liemao Cao
err分享
err收藏
Robust Ohmic Contact in Monolayer ZrI2 Coupled with Cold Metal单层ZrI2与冷金属耦合的鲁棒欧姆接触
errThe Journal of Physical Chemistry C
IF0
err2025-07-21
err0
PREAI
errBo Huang; Xiaohui Deng; Zhen-Kun Tang; Liemao Cao
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err收藏
Contact Properties of Two-Dimensional Semiconductor As2C3 with Metals and Semimetals二维半导体As2C3与金属和半金属的接触特性
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2025-04-28
err0
PREAI
errHuang, B; Yang, JY; Liu, X; Tang, ZK; Cao, LM
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MA2Z4 family heterostructures: Promises and prospects (vol 10, 041307, 2023)
errAPPLIED PHYSICS REVIEWS
IF11.6
err2024-04-01
err0
errOAAI
errTho, Che Chen; Guo, San-Dong; Liang, Shi-Jun; Ong, Wee Liat; Lau, Chit Siong; Cao, Liemao; Wang, Guangzhao; Ang, Yee Sin
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Graphene/M2OS (M = Ga, In) van der Waals Heterostructure with Robust Ohmic Contact具有鲁棒欧姆接触的石墨烯/M2OS (M = Ga，In) 范德华异质结构
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2024-03-26
err4
PREAI
errLiu, Xiang; Yang, Jingying; Deng, Xiaohui; Tang, Zhen-kun; Cao, Liemao
err分享
err收藏
Understanding the synergistic catalysis effect on the dual-metal-N4 embedding single-walled carbon nanotubes from first principles
errMATERIALS TODAY COMMUNICATIONS
IF4.5
err2024-03-01
err1
PREAI
errCong, Bao-Tong; Zhao, Wen-Hui; Liang, Zheng; Sun, Dong-Yin; Cao, Lie-Mao; Deng, Xiao-Hui; Tang, Zhen-Kun
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Designing CMOS compatible efficient ohmic contacts to WSi2N4 via surface-engineered Mo2B monolayer electrodes
errJOURNAL OF MATERIALS CHEMISTRY C
IF5.1
err2024-01-01
err7
PREAI
errCao, Liemao; Deng, Xiaohui; Tang, Zhen-kun; Tan, Rui; Ang, Yee Sin
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Tunable electronic structure and excellent catalytic properties of transition-metal-doped BeN4 monolayer过渡金属掺杂BeN4单层膜的可调电子结构和优异的催化性能
errCHEMICAL COMMUNICATIONS
IF4.2
err2024-01-01
err0
PREAI
errZhao, Wen-Hui; Sun, Dong-Yin; Deng, Zi-Qiang; Liu, Shi-Yao; Cao, Lie-Mao; Deng, Xiao-Hui; Yin, Wen-Jin; Tang, Zhen-Kun
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MA2Z4 family heterostructures: Promises and prospects
errAPPLIED PHYSICS REVIEWS
IF11.6
err2023-11-22
err45
errOAAI
errTho, Che Chen; Guo, San-Dong; Liang, Shi-Jun; Ong, Wee Liat; Lau, Chit Siong; Cao, Liemao; Wang, Guangzhao; Ang, Yee Sin
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Semimetal contacts to monolayer semiconductor: weak metalization as an effective mechanism to Schottky barrier lowering
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2023-04-05
err21
errOAAI
errSu, Tong; Li, Yueyan; Wang, Qianqian; Zhao, Weiwei; Cao, Liemao; Ang, Yee Sin
err分享
err收藏
2D Janus MoSSe/MoGeSiN4 vdW heterostructures for photovoltaic and photocatalysis applications
errJOURNAL OF ALLOYS AND COMPOUNDS
IF6.3
err2023-03-01
err12
PREAI
errZhang, Qian-Kui; Zhao, Wen-Hui; Zhou, Zhong-Peng; Cao, Lie-Mao; Yin, Wen-Jin; Wei, Xiao-Lin; Tang, Zhen-Kun; Zhang, Hui
err分享
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2D janus niobium oxydihalide NbOXY: Multifunctional piezoelectric semiconductor for electronics, photonics, sensing and sustainable energy applications
errMATERIALS TODAY PHYSICS
IF9.7
err2023-02-01
err30
errOAAI
errSu, Tong; Lee, Ching Hua; Guo, San-Dong; Wang, Guangzhao; Ong, Wee-Liat; Cao, Liemao; Zhao, Weiwei; Yang, Shengyuan A.; Ang, Yee Sin
err分享
err收藏
Cataloguing MoSi2N4 and WSi2N4 van der Waals Heterostructures: An Exceptional Material Platform for Excitonic Solar Cell Applications编目MoSi2N4和WSi2N4范德华异质结构: 激子太阳能电池应用的特殊材料平台
errADVANCED MATERIALS INTERFACES
IF4.4
err2022-12-04
err58
PREAI
errTho, Che Chen; Yu, Chenjiang; Tang, Qin; Wang, Qianqian; Su, Tong; Feng, Zhuoer; Wu, Qingyun; Nguyen, C. V.; Ong, Wee-Liat; Liang, Shi-Jun; Guo, San-Dong; Cao, Liemao; Zhang, Shengli; Yang, Shengyuan A.; Ang, Lay Kee; Wang, Guangzhao; Ang, Yee Sin
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Designing high-efficiency metal and semimetal contacts to two-dimensional semiconductor γ-GeSe
errAPPLIED PHYSICS LETTERS
IF3.6
err2022-09-15
err22
PREAI
errCao, Liemao; Deng, Xiaohui; Tang, Zhenkun; Zhou, Guanghui; Ang, Yee Sin
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Multiferroic van der Waals heterostructure FeCl2/Sc2CO2: Nonvolatile electrically switchable electronic and spintronic properties多铁性范德华异质结构FeCl2/Sc2CO2: 非易失性电切换电子和自旋电子特性
errPHYSICAL REVIEW B
IF3.7
err2022-04-07
err49
errOAAI
errCao, Liemao; Deng, Xiaohui; Zhou, Guanghui; Liang, Shi-Jun; V. Nguyen, Chuong; Ang, L. K.; Ang, Yee Sin
err分享
err收藏
Gate-Defined Quantum Confinement in CVD 2D WS2
errADVANCED MATERIALS
IF26.8
err2021-08-26
err27
PREAI
errLau, Chit Siong; Chee, Jing Yee; Cao, Liemao; Ooi, Zi-En; Tong, Shi Wun; Bosman, Michel; Bussolotti, Fabio; Deng, Tianqi; Wu, Gang; Yang, Shuo-Wang; Wang, Tong; Teo, Siew Lang; Wong, Calvin Pei Yu; Chai, Jian Wei; Chen, Li; Zhang, Zhong Ming; Ang, Kah-Wee; Ang, Yee Sin; Goh, Kuan Eng Johnson
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Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers
errNPJ 2D MATERIALS AND APPLICATIONS
IF8.8
err2021-08-04
err152
errOAAI
errWang, Qianqian; Cao, Liemao; Liang, Shi-Jun; Wu, Weikang; Wang, Guangzhao; Lee, Ching Hua; Ong, Wee Liat; Yang, Hui Ying; Ang, Lay Kee; Yang, Shengyuan A.; Ang, Yee Sin
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Semiconductor-to-metal transition in bilayer MoSi2N4 and WSi2N4 with strain and electric field具有应变和电场的双层MoSi2N4和WSi2N4中的半导体-金属转变
errAPPLIED PHYSICS LETTERS
IF3.6
err2021-03-16
err88
errOAAI
errWu, Qingyun; Cao, Liemao; Ang, Yee Sin; Ang, Lay Kee
err分享
err收藏

研究方向

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合作学者
合作期刊
L
Lain‐Jong Li
H 指数: 131 · 论文数: 644
M
Manish Chhowalla
H 指数: 113 · 论文数: 391
杨辉 封面图
杨辉 (Hui Ying Yang)
H 指数: 104 · 论文数: 1.1K
S
Shengyuan A. Yang
H 指数: 70 · 论文数: 415
梁
梁正 (Zheng Liang)
H 指数: 64 · 论文数: 296
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