Stefan Bengtsson - Publications, H-index & Citations

Stefan Bengtsson

uppsala university

24H指数

182论文数

1.8K被引数

收录论文 17

发表时间

Care in formal Environmental and Sustainability Education: a scoping review 正式环境与可持续发展教育中的关怀：一项范围综述

Environmental Education Research

IF3.1

2026-05-20

PREAI

Charlotte Ponzelar; Stefan Bengtsson

Teaching controversial sustainability issues at the junior high-school level: an explorative study of teaching traditions and associations with ways of teaching 在初中阶段教授有争议的可持续发展问题：一项关于教学传统及其与教学方法关联的探索性研究

environmental research

IF3.1

2025-07-31

OAAI

M. Ojala; L. Östman; K. Van Poeck; S. Bengtsson; M. Håkansson; P. Hansson

Influence of SC-1/SC-2 cleaning on wafer-bonded silicon dioxide structures

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2019-12-07

PREAI

Ericsson, P; Bengtsson, S

Reliability evaluation of manufacturing processes for bipolar and MOS devices on silicon-on-diamond materials

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2019-12-06

PREAI

Edholm, B; Soderbarg, A; Bengtsson, S

Modification of silicon surfaces with H2SO4:H2O2:HF and HNO3:HF for wafer bonding applications

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2019-12-06

PREAI

Ljungberg, K; Jansson, U; Bengtsson, S; Soderbarg, A

Ultraclean Si/Si interface formation by surface preparation and direct bonding in ultrahigh vacuum

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2019-12-06

OAAI

Hermansson, K; Grey, F; Bengtsson, S; Sodervall, U

Engaging with the Beyond-Diffracting Conceptions of T-Learning

SUSTAINABILITY

IF3.3

2019-06-21

OAAI

Bengtsson, Stefan

Monolayers and nanoparticles on nickel silicide for molecular electronics

APPLIED PHYSICS LETTERS

IF3.6

2006-04-03

PREAI

Marx, E; Chiesa, M; Borg, M; Bengtsson, S; Less, RJ; Raithby, PR; Ford, CJB; Greenham, NC

Low frequency noise in silicon nanogaps

APPLIED PHYSICS LETTERS

IF3.6

2005-11-21

PREAI

Berg, J; Lundgren, P; Enoksson, P; Bengtsson, S

Room temperature wafer bonding using oxygen plasma treatment in reactive ion etchers with and without inductively coupled plasma

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2003-01-01

PREAI

Sanz-Velasco, A; Amirfeiz, P; Bengtsson, S; Colinge, C

SECONDARY BETA-AMINOBENZAMIDE AND HETEROATOM DIRECTED LITHIATION IN THE SYNTHESIS OF 5,6-DIMETHOXYANTHRANILAMIDES AND RELATED-COMPOUNDS

JOURNAL OF ORGANIC CHEMISTRY

IF3.6

2002-05-01

PREAI

BENGTSSON, S; HOGBERG, T

Plasma assisted room temperature bonding for MST

SENSORS AND ACTUATORS A-PHYSICAL

IF4.9

2001-08-01

PREAI

Weinert, A; Amirfeiz, P; Bengtsson, S

n-Si/SiO2/Si heterostructure barrier varactor diode design

APPLIED PHYSICS LETTERS

IF3.6

2000-07-03

PREAI

Fu, Y; Mamor, M; Willander, M; Bengtsson, S; Dillner, L

Formation of silicon structures by plasma-activated wafer bonding

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2000-01-01

172

PREAI

Amirfeiz, P; Bengtsson, S; Bergh, M; Zanghellini, E; Börjesson, L

Internal oxidation of low dose separation by implanted oxygen wafers in different oxygen/nitrogen mixtures

APPLIED PHYSICS LETTERS

IF3.6

1997-10-20

PREAI

Ericsson, P; Bengtsson, S

Formation of directly bonded Si/Si interfaces in ultra-high vacuum 超高真空中直接键合Si/Si界面的形成

APPLIED SURFACE SCIENCE

IF6.9

1997-06-01

PREAI

Ljungberg, K; Grey, F; Bengtsson, S

The influence of wafer dimensions on the contact wave velocity in silicon wafer bonding

APPLIED PHYSICS LETTERS

IF3.6

1996-11-25

PREAI

Bengtsson, S; Ljungberg, K; Vedde, J

研究方向