Yi Shen

fudan university

H指数:15

被引数:822

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Improving interfacial thermal conductivity by constructing covalent bond between Ga₂O₃ and SiC

通过构建Ga₂O₃和SiC之间的共价键来提高界面热导率

Nature Communications

IF15.7

2025-11-280

OAAI

Impact of BN Buffer Layer Thickness on Interfacial Structure and Band Alignment of a-BN/4H-SiC Heterojunctions

BN缓冲层厚度对a-BN/4H-SiC异质结界面结构和能带排列的影响

Coatings 2025, Vol. 15, Page 1224

IF0

2025-10-180

OAAI

Unveiling the interfacial nanostructure and electrical mechanism of low-resistivity Cr/Au ohmic contacts formed on β-Ga2O3 via laser annealing

通过激光退火在β-Ga2O3上形成的低电阻率Cr/Au欧姆接触的界面纳米结构及电学机理揭示

Applied Surface Science

IF6.9

2025-07-290

PRE

Band Alignment, Thermal Transport Property, and Electrical Performance of High-Quality β-Ga2O3/AlN Schottky Barrier Diode Grown via MOCVD

能带排列、热输运性质和高品质β-Ga₂O₃/AlN肖特基势垒二极管（通过MOCVD生长）的电学性能

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2025-04-280

PRE

Study of ZrO2 Gate Dielectric with Thin SiO2 Interfacial Layer in 4H-SiC Trench MOS Capacitors

4H-SiC沟槽MOS电容器中具有薄SiO2界面层的ZrO2栅介质的研究

MATERIALS

IF3.2

2025-04-100

Reduction of Interface State Density in 4H-SiC MOS Capacitors Modified by ALD-Deposited Interlayers

通过ALD沉积中间层改性的4H-SiC MOS电容器中界面态密度的降低

NANOMATERIALS

IF4.3

2025-04-050

OAAI

Mechanism study of low-resistance ohmic contact in Cr/Au electrodes on (100) /3-Ga2O3 substrate with rapid thermal annealing

APPLIED SURFACE SCIENCE

IF6.9

2025-03-010

PRE

Influence of different crystals on the properties of gallium oxide materials and solar blind UV photoelectric detection

OPTICAL MATERIALS

IF4.2

2025-03-010

PRE

High-Breakdown and Low-Leakage 4H-SiC MOS Capacitor Based on HfO2/SiO2 Stacked Gate Dielectric in Trench Structures

NANOMATERIALS

IF4.3

2025-02-220

OAAI

Topological and stress optimizations of silicone layer in space solar arrays

空间太阳能阵列中硅胶层的拓扑与应力优化

JOURNAL OF POLYMER RESEARCH

IF2.8

2025-02-100

PRE

A strategy for enhancing interfacial thermal transport in Ga2O3-diamond composite structure by introducing an AlN interlayer

NANO ENERGY

IF17.1

2024-12-010

PRE

Impact of an annealing atmosphere on band-alignment of a plasma-enhanced atomic layer deposition-grown Ga2O3/SiC heterojunction

MATERIALS TODAY PHYSICS

IF9.7

2024-12-010

PRE

The Influence of Annealing Temperature on the Interfacial Heat Transfer in Pulsed Laser Deposition-Grown Ga2O3 on Diamond Composite Substrates

退火温度对金刚石复合衬底上脉冲激光沉积生长的Ga2O3界面传热的影响

C-JOURNAL OF CARBON RESEARCH

IF2.9

2024-09-042

Interface band alignment of amorphous Ga2O3 /Ge heterojunctions fabricated by atomic layer deposition

OPTICAL MATERIALS

IF4.2

2024-04-010

PRE

Investigation of gallium oxide thin film hetero-integrated with bulk diamond via atomic layer deposition

APPLIED SURFACE SCIENCE

IF6.9

2023-12-0111

PRE

Influence of Nitrogen Annealing Treatment on Optical, Microstructural, and Chemical Properties of Ga2O3 Film Grown by Plasma-Enhanced Atomic Layer Deposition

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2023-05-247

PRE

Progress in salivary glands: Endocrine glands with immune functions

唾液腺研究进展: 具有免疫功能的内分泌腺

FRONTIERS IN ENDOCRINOLOGY

IF4.6

2023-02-0313

OAAI

Temperature-dependent oxygen annealing effect on the properties of Ga2O3 thin film deposited by atomic layer deposition

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2022-12-0125

PRE

Atomic-Level Sn Doping Effect in Ga2O3 Films Using Plasma-Enhanced Atomic Layer Deposition

NANOMATERIALS

IF4.3

2022-11-3017

OAAI

Cascade of pressure-driven phase transitions in the topological nodal-line superconductor PbTaSe2

PHYSICAL REVIEW B

IF3.7

2022-08-025

PRE

Yi Shen

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