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L

Lin Gu

fudan university

H指数:9

被引数:288

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Impact of BN Buffer Layer Thickness on Interfacial Structure and Band Alignment of a-BN/4H-SiC Heterojunctions

BN缓冲层厚度对a-BN/4H-SiC异质结界面结构和能带排列的影响

Coatings 2025, Vol. 15, Page 1224

IF0

2025-10-180

OAAI

Improvement of Physical and Electrical Characteristics in 4H-SiC MOS Capacitors Using AlON Thin Films Fabricated via Plasma-Enhanced Atomic Layer Deposition

通过等离子体增强原子层沉积法制备的AlON薄膜改善4H-SiC MOS电容器的物理和电气特性

Materials 2025, Vol. 18, Page 4531

IF3.2

2025-09-300

OAAI

Unveiling the interfacial nanostructure and electrical mechanism of low-resistivity Cr/Au ohmic contacts formed on β-Ga2O3 via laser annealing

通过激光退火在β-Ga2O3上形成的低电阻率Cr/Au欧姆接触的界面纳米结构及电学机理揭示

Applied Surface Science

IF6.9

2025-07-290

PRE

Band Alignment, Thermal Transport Property, and Electrical Performance of High-Quality β-Ga2O3/AlN Schottky Barrier Diode Grown via MOCVD

能带排列、热输运性质和高品质β-Ga₂O₃/AlN肖特基势垒二极管（通过MOCVD生长）的电学性能

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2025-04-280

PRE

Study of ZrO2 Gate Dielectric with Thin SiO2 Interfacial Layer in 4H-SiC Trench MOS Capacitors

4H-SiC沟槽MOS电容器中具有薄SiO2界面层的ZrO2栅介质的研究

IF3.2

2025-04-100

OA

Reduction of Interface State Density in 4H-SiC MOS Capacitors Modified by ALD-Deposited Interlayers

通过ALD沉积中间层改性的4H-SiC MOS电容器中界面态密度的降低

IF4.3

2025-04-050

OAAI

Mechanism study of low-resistance ohmic contact in Cr/Au electrodes on (100) /3-Ga2O3 substrate with rapid thermal annealing

APPLIED SURFACE SCIENCE

IF6.9

2025-03-010

PRE

Influence of different crystals on the properties of gallium oxide materials and solar blind UV photoelectric detection

OPTICAL MATERIALS

IF4.2

2025-03-010

PRE

High-Breakdown and Low-Leakage 4H-SiC MOS Capacitor Based on HfO2/SiO2 Stacked Gate Dielectric in Trench Structures

IF4.3

2025-02-220

OAAI

The Influence of Annealing Temperature on the Interfacial Heat Transfer in Pulsed Laser Deposition-Grown Ga2O3 on Diamond Composite Substrates

退火温度对金刚石复合衬底上脉冲激光沉积生长的Ga2O3界面传热的影响

C-JOURNAL OF CARBON RESEARCH

IF2.9

2024-09-042

OA

Insights into the effect of susceptor rotational speed in CVD reactor on the quality of 4H-SiC epitaxial layer on homogeneous substrates

MATERIALS TODAY COMMUNICATIONS

IF4.5

2024-03-014

PRE

Investigation of gallium oxide thin film hetero-integrated with bulk diamond via atomic layer deposition

APPLIED SURFACE SCIENCE

IF6.9

2023-12-0111

PRE

Influence of Nitrogen Annealing Treatment on Optical, Microstructural, and Chemical Properties of Ga2O3 Film Grown by Plasma-Enhanced Atomic Layer Deposition

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2023-05-247

PRE

Temperature-dependent oxygen annealing effect on the properties of Ga2O3 thin film deposited by atomic layer deposition

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2022-12-0125

PRE

Atomic-Level Sn Doping Effect in Ga2O3 Films Using Plasma-Enhanced Atomic Layer Deposition

IF4.3

2022-11-3017

OAAI

Annealing effect on SiNx/SiO2 superlattice with ultrathin sublayer fabricated using plasma-enhanced atomic layer deposition

CERAMICS INTERNATIONAL

IF5.6

2022-08-017

PRE