Where we stand on energy justice: Typologies from fuzzy ideal type analysis and interpretations from the Global South我们目前在能源正义领域的立场:基于模糊理想类型分析的分类法与来自全球南方的解读Energy Research & Social ScienceIF7.42025-09-220PRE
Social status as a latent variable in the amygdala of observers of social interactionsNEURONIF152024-12-010OAAI
Active interface characteristics of heterogeneously integrated GaAsSb/Si photodiodesAPPLIED PHYSICS LETTERSIF3.62024-10-210OA
Low excess noise and high quantum efficiency avalanche photodiodes for beyond 2 μm wavelength detectionCOMMUNICATIONS MATERIALSIF9.62024-10-090OA
Structural and electrical properties of grafted Si/GaAsSb heterojunctionAPPLIED PHYSICS LETTERSIF3.62024-09-064PRE
A comparative study of impact ionization and avalanche multiplication in InAs, HgCdTe, and InAlAs/InAsSb superlatticeAPPLIED PHYSICS LETTERSIF3.62024-03-280OA
InGaAs/AlInAsSb avalanche photodiodes with low noise and strong temperature stabilityAPL PHOTONICSIF5.32023-11-276OA
Ionization coefficients and excess noise characteristics of AlInAsSb on an InP substrateAPPLIED PHYSICS LETTERSIF3.62023-09-288PRE
High electric field characteristics of GaAsSb photodiodes on InP substratesAPPLIED PHYSICS LETTERSIF3.62023-06-0111PRE
Enhancement in electro-optic performance of InAlGaAs/GaAs quantum dot lasers by ex situ thermal annealingOPTICS LETTERSIF3.32023-03-301OA
Temperature Dependence of Avalanche Breakdown of AlGaAsSb and AlInAsSb Avalanche PhotodiodesJOURNAL OF LIGHTWAVE TECHNOLOGYIF4.82022-09-0113OA
Impact Ionization Coefficients of Digital Alloy and Random Alloy Al0.85Ga0.15As0.56Sb0.44 in a Wide Electric Field RangeJOURNAL OF LIGHTWAVE TECHNOLOGYIF4.82022-07-1518PRE
Random alloy thick AlGaAsSb avalanche photodiodes on InP substratesAPPLIED PHYSICS LETTERSIF3.62022-02-1424PRE
Optical constants of Al0.85Ga0.15As0.56Sb0.44 and Al0.79In0.21As0.74Sb0.26APPLIED PHYSICS LETTERSIF3.62021-10-2710PRE
Low noise Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes on InP substratesAPPLIED PHYSICS LETTERSIF3.62021-02-2535PREAI
Engineering of impact ionization characteristics in In0.53Ga0.47As/Al0.48In0.52As superlattice avalanche photodiodes on InP substrateSCIENTIFIC REPORTSIF3.92020-10-0717OAAI
Determination of background doping polarity of unintentionally doped semiconductor layersAPPLIED PHYSICS LETTERSIF3.62020-02-199OAAI