Source Impurity Contributions and Polarity Inverting in the Unintentional Doping of Al x In1-x As y Sb1-y Digital Alloys Grown via Molecular Beam EpitaxyCRYSTAL GROWTH & DESIGNIF3.42024-12-250PRE
Chemical, Structural, and Electrical Changes in Molecular Layer-Deposited Hafnicone Thin Films after Thermal ProcessingACS APPLIED ELECTRONIC MATERIALSIF4.72024-06-282OAAI
Separate absorption, charge, and multiplication staircase avalanche photodiodesAPPLIED PHYSICS LETTERSIF3.62024-02-204OA
Ionization coefficients and excess noise characteristics of AlInAsSb on an InP substrateAPPLIED PHYSICS LETTERSIF3.62023-09-288PRE
Demonstration of the AlInAsSb cascaded multiplier avalanche photodiodeAPPLIED PHYSICS LETTERSIF3.62023-07-262PRE
Multistep staircase avalanche photodiodes with extremely low noise and deterministic amplification (vol 15, pg 468, 2021)NATURE PHOTONICSIF32.92023-06-151OA
Photon-trapping-enhanced avalanche photodiodes for mid-infrared applicationsNATURE PHOTONICSIF32.92023-05-1540OA
Temperature Dependence of Avalanche Breakdown of AlGaAsSb and AlInAsSb Avalanche PhotodiodesJOURNAL OF LIGHTWAVE TECHNOLOGYIF4.82022-09-0113OA
Impact Ionization Coefficients of Digital Alloy and Random Alloy Al0.85Ga0.15As0.56Sb0.44 in a Wide Electric Field RangeJOURNAL OF LIGHTWAVE TECHNOLOGYIF4.82022-07-1518PRE
Narrow bandgap Al0.15In0.85As0.77Sb0.23 for mid-infrared photodetectorsOPTICS EXPRESSIF3.32022-07-134OA
Frequency behavior of AlInAsSb nBn photodetectors and the development of an equivalent circuit modelOPTICS EXPRESSIF3.32022-06-285OA
Digital Alloy Staircase Avalanche Photodetectors With Tunneling-Enhanced Gain具有隧穿增强增益的数字合金阶梯雪崩光电探测器IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICSIF5.12022-03-010OA
Random alloy thick AlGaAsSb avalanche photodiodes on InP substratesAPPLIED PHYSICS LETTERSIF3.62022-02-1424PRE
Near 100% external quantum efficiency 1550-nm broad spectrum photodetectorOPTICS EXPRESSIF3.32022-01-148OA
Al0.3InAsSb/Al0.7InAsSb Digital Alloy nBn PhotodetectorsJOURNAL OF LIGHTWAVE TECHNOLOGYIF4.82022-01-019OA
Neuron-Inspired Time-of-Flight Sensing via Spike-Timing-Dependent Plasticity of Artificial SynapsesADVANCED INTELLIGENT SYSTEMSIF6.12021-11-058PREAI
Optical constants of Al0.85Ga0.15As0.56Sb0.44 and Al0.79In0.21As0.74Sb0.26APPLIED PHYSICS LETTERSIF3.62021-10-2710PRE
Comparison and analysis of Al0.7InAsSb avalanche photodiodes with different background doping polaritiesAPPLIED PHYSICS LETTERSIF3.62021-07-204PREAI
个人简介
教育背景
工作经历
荣誉奖项
未登录.png){kind=icon}
未登录个人简介教育背景工作经历荣誉奖项
研究方向