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C

Chee Won Chung

Inha University

H指数:18

被引数:1,375

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Highly anisotropic etching of molybdenum thin films using Cl2/O2/HBr/Ar gas mixtures

使用Cl2/O2/HBr/Ar气体混合物对钼薄膜进行高度各向异性刻蚀

Materials Science in Semiconductor Processing

IF4.6

2026-07-130

PRE

Atomic layer deposition of Ga2O3 over a wide temperature range using a novel heteroleptic precursor (N,N-di-tert-butylacetimidamido)dimethylgallium (DBADMGa)

使用新型异配体前驱体(N,N-二叔丁基乙酰胺亚胺)二甲基镓(DBADMGa)在宽温度范围内原子层沉积Ga2O3

Applied Surface Science

IF6.9

2026-05-010

PRE

Anisotropic Etching of Cobalt Thin Films Using High Density Plasma of Ethylenediamine/Ar Gas Mixture

使用乙二胺/Ar气体混合物的高密度等离子体对钴薄膜进行各向异性蚀刻

Korean Journal of Chemical Engineering

IF3.2

2026-01-200

PRE

Redeposition-free dry etching of copper thin films using organic gas mixtures

使用有机气体混合物的无再沉积干法刻蚀铜薄膜

IF3.9

2025-09-150

PRE

Influence of an etch mask on the etch profile of copper thin films in propanol/Ar gas mixture

蚀刻掩模对丙醇/Ar气体混合物中铜薄膜蚀刻轮廓的影响

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2025-01-010

PRE

Fine-line formation of cobalt thin films via cyclic etching using two-step process

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2024-03-011

PRE

High-density plasma etching of cobalt thin films using C2H5OH/O2/Ar gas mixture

使用C2H5OH/O2/Ar气体混合物对钴薄膜进行高密度等离子体蚀刻

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS

IF4.6

2023-07-013

PRE

Effect of the addition of O2 on copper etching using high density plasma of acetylacetonate/Ar

添加O2对乙酰丙酮/Ar高密度等离子体蚀刻铜的影响

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2022-12-011

PRE

Inductively coupled plasma reactive ion etching of copper thin films using ethylenediamine/butanol/Ar plasma

乙二胺/丁醇/Ar等离子体电感耦合等离子体反应离子刻蚀铜薄膜

IF3.9

2020-11-0110

PREAI

Study on fence-free platinum etching using chlorine-based gases in inductively coupled plasma

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2019-12-0625

PREAI

Evolution of etch profile of copper thin films in high density plasmas of alcohol-based gases

醇基气体高密度等离子体中铜薄膜蚀刻轮廓的演变

IF3.9

2019-09-0115

PREAI

Highly anisotropic etching of Ta thin films using high density plasmas of halogen based gases

使用卤素基气体的高密度等离子体对Ta薄膜进行高度各向异性蚀刻

IF3.9

2016-11-013

PREAI

Novel spherical TiO2 aggregates with diameter of 100 nm for efficient mesoscopic perovskite solar cells

IF17.1

2016-02-0150

PREAI

Inductively coupled plasma reactive ion etching of CoFeB magnetic thin films in a CH3COOH/Ar gas mixture

CH3COOH/Ar混合气体中CoFeB磁性薄膜的电感耦合等离子体反应离子刻蚀

IF3.9

2015-09-0111

PREAI

Dry etching of Co2MnSi magnetic thin films using a CH3OH/Ar based inductively coupled plasma

使用CH3OH/Ar基感应耦合等离子体干法刻蚀Co2MnSi磁性薄膜

IF3.9

2015-01-019

PREAI

Etch characteristics of MgO thin films in Cl2/Ar, CH3OH/Ar and CH4/Ar plasmas

MgO薄膜在Cl2/Ar、CH3OH/Ar和CH4/Ar等离子体中的刻蚀特性

IF3.9

2014-03-018

PREAI

Etch characteristics of CoFeB magnetic thin films using high density plasma of a H2O/CH4/Ar gas mixture

IF3.9

2013-11-0117

PREAI

Characterization of Cu(In,Ga)Se2 thin films prepared by RF magnetron sputtering using a single target without selenization

JOURNAL OF INDUSTRIAL AND ENGINEERING CHEMISTRY

IF6

2013-07-0113

PREAI

Evolution of Etch Profile of Magnetic Tunnel Junction Stacks Etched in a CH3OH/Ar Plasma

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2012-01-0129

PREAI

Characteristics of indium zinc oxide thin films prepared by direct current magnetron sputtering for flexible solar cells

SOLAR ENERGY MATERIALS AND SOLAR CELLS

IF6.3

2011-01-018

PREAI