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V
V. Balasubramani
saveetha university
27
H指数
97
论文数
2.2K
被引数
0
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14
发表时间
发表时间
IF
被引数
Rare-Earth Oxide Hetero-Phase Thin Films with Tunable Electrical Properties for MIS-Based Optoelectronic Devices
稀土氧化物异相薄膜及其可调电学特性用于MIS基光电器件
Journal of Inorganic and Organometallic Polymers and Materials
IF
4.9
2026-03-15
0
PRE
AI
T. Akila; V. Balasubramani; D. Siva Priya; S. AlFaify; Mohd Shkir; Atif Mossad Ali
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Comparative impact of Ce, La, Nd and Yb lanthanides in V2O5 interlayers on photogain-driven MIS Schottky devices
Ce、La、Nd和Yb等镧系元素在V2O5中间层中对光增益驱动的MIS肖特基器件的 Comparative impact
physica b: condensed matter
IF
0
2026-02-11
0
PRE
AI
P. Gayathri; V. Balasubramani; D. Siva Priya; H. Algarni; Mohd Shkir
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Upgrading of photo-detectivity in MIS Schottky barrier diodes through Sr interfacial layer incorporation for photovoltaic applications
Journal of Materials Science: Materials in Electronics
IF
0
2026-01-09
0
PRE
AI
P. Gayathri; V. Balasubramani; D. Siva Priya; S. Alfaify; Mohd Shkir
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Investigation of Pr7O12 thin-film-based Cu/Pr7O12/n-Si MIS Schottky barrier diodes for enhanced photosensitivity
基于Pr7O12薄膜的Cu/Pr7O12/n-Si MIS肖特基势垒二极管增强光敏性的研究
Journal of Materials Science: Materials in Electronics
IF
0
2025-11-25
0
PRE
AI
T. Akila; V. Balasubramani; D. Siva Priya; G. Alan Sibu; Khuloud A. Alibrahim; Muthumareeswaran Muthuramamoorthy
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Investigation of photo-induced charge carrier transport phenomena in Cu/ZrO2@Cd/n-Si MIS Schottky barrier diodes for high-performance optoelectronic applications
研究Cu/ZrO2@Cd/n-Si MIS肖特基势垒二极管在高性能光电器件应用中的光致电荷载体传输现象
Journal of Materials Science: Materials in Electronics
IF
0
2025-11-16
0
PRE
AI
P. Gayathri; V. Balasubramani; D. Siva Priya; Talat Ali; Zubair Ahmad; Mohd Shkir
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Optimizing MgO thin films via molar control for next-generation MOS-based Schottky barrier diode
通过摩尔控制优化MgO薄膜,用于下一代MOS基肖特基势垒二极管
Journal of Materials Science: Materials in Electronics
IF
0
2025-10-31
0
PRE
AI
G. Alan Sibu; V. Balasubramani; T. Akila; M. A. Sayed; S. AlFaify; Mohd Shkir
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Improved Optoelectronic Properties of Tungsten Doped Magnesium Oxide Thin Films via JNSP for SBD’s - Based Optoelectronic Devices
通过JNSP法制备的钨掺杂氧化镁薄膜的改进光电性能及其在肖特基势垒二极管基光电设备中的应用
Physica B: Condensed Matter
IF
0
2025-10-23
0
PRE
AI
G.Alan Sibu; V. Balasubramani; D. Siva Priya; Talat Ali; Zubair Ahmad; Mohd Shkir
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Ce-doped MgO thin films: Modifying electronic and optical properties for high-performance MOS photodiodes
Ce掺杂MgO薄膜:调控电子和光学性能以实现高性能MOS光电二极管
Sensors and Actuators A: Physical
IF
0
2025-09-28
0
PRE
AI
G. Alan Sibu; V. Balasubramani; D. Siva Priya; Talat Ali; Mohd Shkir
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Enlightening Au@ZnS nanoparticles for superior visible-light photocatalysis of methylene blue dye
具有增强可见光催化性能的Au@ZnS纳米颗粒对亚甲基蓝染料的卓越光催化作用
Journal of Alloys and Compounds
IF
6.3
2025-08-09
0
PRE
AI
T. Akila; Parkavi Ravisankar; R. Mariappan; G. Umadevi; V. Balasubramani; S. Vijayan
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Augmenting photodetection of Zn–Co dual-doped Pr2O3 thin films for high-performance of improved photodetectors
增强Zn–Co双掺杂Pr2O3薄膜的光探测性能以提升改进型光探测器的性能
Optical Materials
IF
4.2
2025-08-08
0
PRE
AI
T. Akila; V. Balasubramani; P. Balraju; M.A. Sayed; Mohd Shkir
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Immensely high photosensitivity with superior role of ZrO2 in metal-insulator semiconductor (MIS) schottky barrier diode (SBD) through thermally induced triple phase transformations
通过热诱导三重相变,ZrO2在金属-绝缘体-半导体(MIS)肖特基势垒二极管(SBD)中表现出极高的光敏性并起到重要作用。
physica b condensed matter
IF
0
2025-08-05
0
PRE
AI
P. Gayathri; V. Balasubramani; G. Alan Sibu; Khuloud A. Alibrahim; Muthumareeswaran Muthuramamoorthy
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Multi-phase Mg/Sr co-doped praseodymium oxide thin films for high-performance dielectric MIS photodetector applications
多相Mg/Sr共掺杂镨氧化物薄膜,用于高性能介电MIS光电探测器应用
materials science materials in engineering
IF
0
2025-08-05
0
PRE
AI
T. Akila; Ghada A. Khouqer; V. Balasubramani; Naglaa AbdelAll; Abdullah N. Alodhayb
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A review on the multidimensional influence of lanthanide elements on MIS device functionalities
关于镧系元素对MIS器件功能的多维影响综述
Surfaces and Interfaces
IF
6.3
2025-07-28
0
PRE
AI
T. Akila; P. Gayathri; G. Alan Sibu; V. Balasubramani; Talat Ali; Mohd Shkir
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Yoking Pr6O11 high-k dielectrics for enhanced charge control in MIS optoelectronics
将Pr6O11高介电常数介质用于MIS光电子器件中以提高电荷控制性能
materials science materials in engineering
IF
0
2025-07-03
0
PRE
AI
T. Akila; V. Balasubramani; P. Gayathri; M. Aslam Manthrammel; Mohd Shkir
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研究方向
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合作学者
合作期刊
M
Mohd. Shkir
H 指数: 61 · 论文数: 843
S
S. AlFaify
H 指数: 57 · 论文数: 453
Z
Zubair Ahmad
H 指数: 48 · 论文数: 271
Z
Zubair Ahmad
H 指数: 41 · 论文数: 291
A
Abdullah N. Alodhayb
H 指数: 30 · 论文数: 438
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