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J

Jae Kyeong Jeong

hanyang university

57H指数
298论文数
1.2W被引数
收录论文 115
发表时间
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Multimodal Optoelectronic Synapses for Neuromorphic Intelligence: Coupling Light, Electrical, Thermal, and Beyond用于神经形态智能的多模态光电突触：耦合光、电、热及更多
errAdvanced Functional Materials
IF19
err2026-07-27
err0
PREAI
errJihyun Shin; Junhyung Cho; Wangmyung Choi; Jaehyun Hur; Jae Kyeong Jeong; Ulrike Kraft; Hocheon Yoo
err分享
err收藏
Crystalline IGO TFTs With High Reliability Under DRAM-Compatible 600 °C N2 Thermal Budgets在DRAM兼容的600°C N₂热预算下具有高可靠性的结晶态IGO TFTs
errIEEE Electron Device Letters
IF4.5
err2026-03-19
err0
PREAI
errJeong Eun Oh; Nahyun Kim; Jiwon Chae; Min Hee Cho; Daewon Ha; Jae Kyeong Jeong
err分享
err收藏
Direct Mapping of Crystallization-Induced Trap-State Modulation and Its Impact on Local Carrier Mobilities in Indium Oxide Thin-Film Transistors结晶诱导的陷落态调制的直接映射及其对氧化铟薄膜晶体管中局部载流子迁移率的影响
errNano Letters
IF9.1
err2026-03-06
err0
PREAI
errYuhyeon Oh; Jeong Eun Oh; Seunghyo Park; Sang-Eun Lee; Jae Kyeong Jeong; Seunghun Hong
err分享
err收藏
Recent Progress in HfO₂-Based Ferroelectric Devices with Oxide Semiconductor Channels: A Comprehensive ReviewHfO₂基铁电器件及其氧化物半导体通道的最新进展：综合评述
errnanoscale adv.
IF0
err2026-03-04
err0
errOAAI
errHe Young Kang; Yun Ho Shin; Da Eun Kim; Daewoong Kwon; Jae Kyeong Jeong
err分享
err收藏
High Mobility (>200 cm2 V-1 s-1) Transparent Top Gate IGZO TFTs with Oxidized Metal Gate Insulator for Enhanced Conductivity高迁移率(>200 cm² V⁻¹ s⁻¹)透明顶栅IGZO TFTs，采用氧化金属栅绝缘体以提高导电性
errAdvanced Electronic Materials
IF5.3
err2026-03-01
err0
errOAAI
errSun, Hyeonjeong; Yun, Yeoeun; Hwang, Kyubin; Bang, Jiyoung; Choi, Seungmin; Lee, Seungjae; Kim, Taeyang; Choi, Suhwon; Choi, Eunsuk; Jeong, Jae Kyeong; Lee, Seung-Beck
err分享
err收藏
Oxide semiconductor gain cell-embedded memory: materials and integration strategies for next generation on-chip memory氧化物半导体增益单元嵌入式存储器：下一代片上存储器的材料与集成策略
errCommunications Engineering
IF0
err2026-02-23
err0
errOAAI
errChung, Sang Won; Yoon, Seong Hun; Jeong, Jae Kyeong
err分享
err收藏
Optoelectronic Characterization of Trap Density of States in Indium Gallium Oxide Thin-Film Transistors and Their Impact on Bias Stability铟镓氧化物薄膜晶体管中陷阱态密度分布的光电特性表征及其对偏压稳定性的影响
errACS Applied Materials & Interfaces
IF0
err2026-02-19
err0
errOAAI
errSang Yeon Kim; Je-Jun Lee; Jae Seok Hur; Buyeon Kim; Jung Pyo Hong; Seong-Jun Han; Eungseon Yeon; Jung Woo Kim; Jae Kyeong Jeong; Do Kyung Hwang
err分享
err收藏
IGZO/PbS QD/Ga2O3-Based Optical Synapse Transistors With High PPF for NIR DetectionIGZO/PbS QD/Ga2O3基具有高PPF的红外检测光学突触晶体管
errIEEE Electron Device Letters
IF4.5
err2025-11-18
err0
PREAI
errYong Jun Jeong; He Young Kang; Jinwook Oh; Gwang-Bok Kim; Seong Hun Yoon; Seon Woong Bang; Joon-Hyuk Chang; Jae Kyeong Jeong
err分享
err收藏
In-Situ Surface Energy Engineering for ALD-Derived Highly Reliable Top Gate In2O3 Thin-Film Transistors原位表面能工程用于ALD法制备的高可靠性顶栅In₂O₃薄膜晶体管
errIEEE Electron Device Letters
IF4.5
err2025-09-05
err0
PREAI
errJeong Eun Oh; Cheol Hee Choi; Taikyu Kim; Seong Hun Yoon; Seon Woong Bang; Jiwon Chae; Changik Im; Min Hee Cho; Pilsang Yun; Daewon Ha; Jae Kyeong Jeong
err分享
err收藏
Enhancement of IGZO TFT Performance via Metal-Induced Crystallization: A Pathway to High-Performance Next-Generation Displays通过金属诱导结晶提升IGZO TFT性能：通向高性能下一代显示器的途径
errACS Applied Materials & Interfaces
IF8.2
err2025-08-05
err0
PREAI
errSeongkyu Kang; Byoungwoo Kim; Gwang-Bok Kim; Jae Kyeong Jeong
err分享
err收藏
Scalable Ternary Logic Device Based on TeOx/IGTO Heterojunction Transistor基于TeOx/IGTO异质结晶体管的可扩展三态逻辑器件
errADVANCED FUNCTIONAL MATERIALS
IF19
err2025-05-19
err0
PREAI
errJung, C; Lee, J; Heo, SH; Yoon, SH; Kim, T; Sung, MM; Jeong, JK
err分享
err收藏
High-Mobility Crystalline Hexagonal Homologous Compound IZTO Thin-Film Transistors for Next-Generation Active-Matrix Organic Light-Emitting Diode Displays: A Metal-Induced Crystallization Approach高迁移率六方同系化合物IZTO薄膜晶体管用于下一代有源矩阵有机发光二极管显示器：一种金属诱导结晶方法
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2025-03-12
err0
PREAI
errKim, GB; Jeong, JK
err分享
err收藏
Enhanced Reliability of High-Quality a-IGZO TFTs for Micro-LED Backplanes: Mitigating V TH Instability at Elevated Temperatures高质量a-IGZO TFTs用于Micro-LED背板时的可靠性增强：缓解高温下的VTH不稳定性
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2025-02-20
err1
PREAI
errMoon, TW; Yoon, SH; Chung, UJ; Park, SY; Jeong, JK
err分享
err收藏
Carrier-generation mechanism in Zn-doped In2O3 transparent conductorsZn掺杂In₂O₃透明导电材料中的载流子产生机制
errPHYSICAL CHEMISTRY CHEMICAL PHYSICS
IF2.9
err2025-01-01
err0
errOAAI
errLee, Sanghyuk; Shim, Seungwon; Jang, Hyunwoo; Jeong, Jae Kyeong; Kang, Youngho
err分享
err收藏
Advancements and hurdles in contact engineering for miniaturized sub-micrometer oxide semiconductor devices
errJOURNAL OF MATERIALS CHEMISTRY C
IF5.1
err2025-01-01
err0
errOAAI
errJeong, Joo Hee; Oh, Jeong Eun; Kim, Dongseon; Ha, Daewon; Jeong, Jae Kyeong
err分享
err收藏
Growth of Highly-Ordered-Crystalline Indium-Gallium-Oxide Thin-Film via Plasma-Enhanced ALD for High Performance Top-Gate Field-Effect Transistors通过等离子体增强ALD制备高度有序晶态铟镓氧化物薄膜，用于高性能顶栅场效应晶体管
errSMALL METHODS
IF9.1
err2024-12-30
err0
PREAI
errMin Jae Kim; Seon Woong Bang; Jae Seok Hur; Seong Hun Yoon; Cheol Hee Choi; Sang Won Chung; Jeong Eun Oh; Yena Kim; Bang Ju Park; Jeonga Lee; Hoichang Yang; Daewon Ha; Min Hee Cho; Jae Kyeong Jeong
err分享
err收藏
Layer-by-Layer Growth of Two-Dimensional Tellurium Thin Films via Ultrahigh-Pressure Atomic Layer Deposition for p-Type Semiconductors通过超高压原子层沉积用于p型半导体的二维碲薄膜的逐层生长
errNANO LETTERS
IF9.1
err2024-12-12
err0
PREAI
errTran, Dai Cuong; Pham, Giang Hoang; Chu, Thi Thu Huong; Kim, Jiyoung; Jeong, Jae Kyeong; Im, Seongil; Lee, Byoung Hun; Sung, Myung Mo
err分享
err收藏
Analog reservoir computing via ferroelectric mixed phase boundary transistors通过铁电混合相边界晶体管进行模拟储层计算
errNATURE COMMUNICATIONS
IF15.7
err2024-10-23
err1
errOAAI
errKim, Jangsaeng; Park, Eun Chan; Shin, Wonjun; Koo, Ryun-Han; Han, Chang-Hyeon; Kang, He Young; Yang, Tae Gyu; Goh, Youngin; Lee, Kilho; Ha, Daewon; Cheema, Suraj S.; Jeong, Jae Kyeong; Kwon, Daewoong
err分享
err收藏
Advances in n-type crystalline oxide channel layers for thin-film transistors: materials, fabrication techniques, and device performance
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2024-10-14
err1
PREAI
errKim, Gwang-Bok; Choi, Cheol Hee; Hur, Jae Seok; Ahn, Jinho; Jeong, Jae Kyeong
err分享
err收藏
Improvement in Performance and Stability of PbS QD/IGZO Phototransistors Through the Introduction of Ga2O3 Film for Broadband Sensor Applications通过引入用于宽带传感器应用的Ga2O3薄膜来改善PbS QD/IGZO光电晶体管的性能和稳定性
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2024-07-04
err3
PREAI
errJeong, Yong Jun; Kim, Gwang-Bok; Kim, Min Jae; Oh, Jinwook; Chang, Joon-Hyuk; Jeong, Jae Kyeong
err分享
err收藏

研究方向

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合作学者
合作期刊
H
Hideo Hosono
H 指数: 136 · 论文数: 2.0K
S
Soo‐Jin Park
H 指数: 121 · 论文数: 2.4K
K
Kilwon Cho
H 指数: 97 · 论文数: 636
C
Cheol Seong Hwang
H 指数: 96 · 论文数: 971
T
Tae‐Woo Lee
H 指数: 89 · 论文数: 651
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